High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same

Claim 1

A method for fabricating a high-permittivity dielectric capacitor for use in a semiconductor device, comprising the steps of: providing a semiconductor substrate and an insulating layer, wherein the insulating layer lies over the semiconductor substrate; forming a first electrode on the insulating layer; chemical vapor depositing a tantalum oxynitride film as a high-permittivity dielectric film on the first electrode in a reactor, wherein tantalum ethoxide gas as a source of tantalum and oxygen is supplied to the reactor at a flow rate of 0.01 sccm to 1 slm, ammonia gas as a source of nitrogen is supplied to the reactor at a flow rate of 10 sccm to 10 slm, a base pressure and a deposition pressure are respectively set to be 1×10 −3 Torr or less and between 1 mTorr and 100 Torr, and a deposition temperature is set to be between 150° C. and 900° C. in the reactor; and forming a second electrode overlying the tantalum oxynitride film.

Claim 2

A method for fabricating a high-permittivity dielectric capacitor for use in a semiconductor device, comprising the steps of: providing a semiconductor substrate and an insulating layer, wherein the insulating layer lies over the semiconductor substrate; forming a first electrode on the insulating layer; chemical vapor depositing a tantalum oxynitride film as a high-permittivity dielectric film on the first electrode in a reactor, wherein tantalum ethoxide gas as a source of tantalum and oxygen is supplied to the reactor at a flow rate of 0.01 sccm to 1 slm, ammonia gas as a source of nitrogen is supplied to the reactor at a flow rate of 10 sccm to 10 slm, a base pressure and a deposition pressure are respectively set to be 1×10 −3 Torr or less and between 1 mTorr and 100 Torr, and a deposition temperature is set to be between 150° C. and 900° C. in the reactor; and forming a second electrode overlying the tantalum oxynitride film.