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US6319759B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method for making oxide

Assignee: International Business Machines Corp
•
Filing: 1998-08-10
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Granted: 2001-11-20
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Expires: 2018-08-10
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Abstract

Abstract A method of forming oxide and gate oxide areas of differing thicknesses. The processes disclosed include using an electromagnetic wave light at differing exposure durations and/or different energy levels to create oxide of differing thicknesses on a layer. The electromagnetic wave is preferably a laser.

Inventors

  • 👤 Toshiharu Furukawa
  • 👤 Mark C. Hakey
  • 👤 Steven J. Holmes
  • 👤 David V. Horak
  • 👤 William H. Ma

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01346; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/0151; H10D84/02; H10D84/03; H10D84/038; H10P34/00; H10P34/40; H10P34/42; H10P14/6319; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215

Claims Analysis

Total Claims: 31
Claim 1
Independent Claim 101 words
A method of forming oxide, comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave and during a first exposure to form a first layer of oxide having a first thickness, wherein the electromagnetic wave has a first given power and is exposed to the first area for a first exposure duration; and exposing a second area of the layer upon which oxide is to be grown to an electromagnetic wave during a second exposure to form a second layer of oxide having a second thickness.
Claim 2
Independent Claim 101 words
A method of forming oxide, comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave and during a first exposure to form a first layer of oxide having a first thickness, wherein the electromagnetic wave has a first given power and is exposed to the first area for a first exposure duration; and exposing a second area of the layer upon which oxide is to be grown to an electromagnetic wave during a second exposure to form a second layer of oxide having a second thickness.
Claim 3
Dependent Claim 34 words
The method of claim 1 , further comprising: providing a first mask to pattern the electromagnetic wave during the first exposure and a second mask to pattern the electromagnetic wave during the second exposure.
Claim 4
Dependent Claim 28 words
The method of claim 1 , wherein the electromagnetic wave exposed to the second area has at least one of a second given power and second exposure duration.
Claim 5
Dependent Claim 15 words
The method of claim 1 , further comprising enclosing the substrate in a gaseous oxidant.
Claim 6
Dependent Claim 25 words
The method of claim 4 , wherein the gaseous oxidant is selected from the group consisting of: oxygen, steam, nitrous oxide, plasma oxygen and ozone.
Claim 7
Dependent Claim 16 words
The method of claim 1 , further comprising providing a mask to pattern the electromagnetic wave.
Claim 8
Dependent Claim 15 words
The method of claim 6 , wherein the mask is in non-contact with the layer.
Claim 9
Dependent Claim 24 words
The method of claim 6 , wherein the mask is selected from the group consisting of: interference silicon dioxide quartz, aluminum and stainless steel.
Claim 10
Dependent Claim 13 words
The method of claim 1 , wherein the electromagnetic wave is a laser.
Claim 11
Dependent Claim 21 words
The method of claim 9 , wherein the laser is an XeCl excimer laser having a wavelength of approximately 308 nm.
Claim 12
Dependent Claim 20 words
The method of claim 3 , wherein the first and second exposure duration range between 3 milliseconds and 10 minutes.
Claim 13
Dependent Claim 22 words
The method of claim 3 , wherein the first and second power range between 1 mj/cm 2 and 100 mJ/cm 2 .
Claim 14
Dependent Claim 24 words
The method of claim 1 , wherein the layer is selected from the group consisting of: silicon, silicon germanium, germanium and silicon on insulator.
Claim 15
Independent Claim 79 words
A method of forming oxide, comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave to form a first layer of oxide having a first thickness; and exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave to form a second layer of oxide having a differing thickness than the first layer of oxide.
Claim 16
Independent Claim 79 words
A method of forming oxide, comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave to form a first layer of oxide having a first thickness; and exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave to form a second layer of oxide having a differing thickness than the first layer of oxide.
Claim 17
Dependent Claim 28 words
The method of claim 14 , wherein the first area is exposed for a first predetermined time and the second area is exposed for a second predetermined time.
Claim 18
Dependent Claim 20 words
The method of claim 15 , wherein the first and second predetermined time range between 3 milliseconds to 10 minutes.
Claim 19
Dependent Claim 36 words
The method of claim 14 , wherein the first area is exposed to an electromagnetic wave of a first power and the second area is exposed to one of an electromagnetic wave of a second power.
Claim 20
Dependent Claim 22 words
The method of claim 17 , wherein the first and second power range between 1 mJ/cm 2 and 100 mj/cm 2 .
Claim 21
Dependent Claim 48 words
The method of claim 14 , wherein the first area is exposed to an electromagnetic wave for one of a first predetermined time and a first predetermined power and the second area is exposed for at least one of a second predetermined time and a second predetermined power.
Claim 22
Dependent Claim 15 words
The method of claim 14 , further comprising enclosing the layer in a gaseous oxidant.
Claim 23
Dependent Claim 25 words
The method of claim 20 , wherein the gaseous oxidant is selected from the group consisting of: oxygen, steam, nitrous oxide, plasma oxygen, and ozone.
Claim 24
Dependent Claim 16 words
The method of claim 14 , further comprising providing a mask to pattern the electromagnetic wave.
Claim 25
Dependent Claim 15 words
The method of claim 22 , wherein the mask is in non-contact with the layer.
Claim 26
Dependent Claim 24 words
The method of claim 22 , wherein the mask is selected from the group consisting of: interference silicon dioxide quartz, aluminum and stainless steel.
Claim 27
Dependent Claim 13 words
The method of claim 14 , wherein the electromagnetic wave is a laser.
Claim 28
Dependent Claim 21 words
The method of claim 25 , wherein the laser is an XeCl excimer laser having a wavelength of approximately 308 nm.
Claim 29
Dependent Claim 24 words
The method of claim 14 , wherein the layer is selected from the group comprising of: silicon, silicon germanium, germanium and silicon on insulator.
Claim 30
Independent Claim 87 words
A method of forming oxide comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave having a first power and first duration to form oxide of a first thickness; and exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave having at least one of a differing power and differing duration to form oxide having a thickness different than the first thickness.
Claim 31
Independent Claim 87 words
A method of forming oxide comprising the steps of: providing a layer; exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave having a first power and first duration to form oxide of a first thickness; and exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave having at least one of a differing power and differing duration to form oxide having a thickness different than the first thickness.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-11-19 2005-05-21 2005-11-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-11-19 2009-05-21 2009-11-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-11-19 2013-05-21 2013-11-20 $7700.00 Window Closed / Lapsed

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