US6313518B1
Expired / Lapsed
US
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Porous silicon oxycarbide integrated circuit insulator
Assignee: Nanya Technology Corp
•
Filing: 2000-03-02
•
Granted: 2001-11-06
•
Expires: 2020-03-02
Abstract
Abstract An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., ε R <2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnection lines, between circuit elements and interconnection lines, or as a passivation layer overlying both circuit elements and interconnection lines. The low dielectric constant silicon oxycarbide isolation insulator of the present invention reduces the parasitic capacitance between circuit nodes. As a result, the silicon oxycarbide isolation insulator advantageously provides reduced noise and signal crosstalk between circuit nodes, reduced power consumption, faster circuit operation, and minimizes the risk of potential timing faults.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/69215; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W20/00; H10W20/01; H10W20/071; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 89
Claim 1
Independent Claim
41 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.
Claim 2
Dependent Claim
41 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.
Claim 3
Dependent Claim
14 words
The integrated circuit of claim 1 , wherein the silicon oxycarbide insulator is porous.
Claim 4
Dependent Claim
14 words
The integrated circuit of claim 1 , wherein the first conductor is a metal.
Claim 5
Dependent Claim
13 words
The integrated circuit of claim 3 , wherein the first conductor includes aluminum.
Claim 6
Dependent Claim
38 words
The integrated circuit of claim 1 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 7
Dependent Claim
27 words
The integrated circuit of claim 5 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 8
Dependent Claim
29 words
The integrated circuit of claim 1 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 9
Dependent Claim
26 words
The integrated circuit of claim 1 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 10
Dependent Claim
25 words
The integrated circuit of claim 1 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 11
Dependent Claim
22 words
The integrated circuit of claim 9 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 12
Dependent Claim
22 words
The integrated circuit of claim 9 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 13
Dependent Claim
30 words
The integrated circuit of claim 1 , further comprising: a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 14
Dependent Claim
44 words
An integrated circuit formed on a substrate comprising: a plurality of active circuit elements formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductors from the active circuit elements.
Claim 15
Dependent Claim
44 words
An integrated circuit formed on a substrate comprising: a plurality of active circuit elements formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductors from the active circuit elements.
Claim 16
Dependent Claim
41 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the porous silicon oxycarbide and 450 square meters per gram of the porous silicon oxycarbide.
Claim 17
Dependent Claim
29 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the porous silicon oxycarbide.
Claim 18
Dependent Claim
30 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 19
Dependent Claim
27 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 20
Dependent Claim
24 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator has a relative dielectric constant that is approximately equal to 1.6.
Claim 21
Dependent Claim
26 words
The integrated circuit of claim 13 , wherein the porous silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 22
Dependent Claim
23 words
The integrated circuit of claim 19 , wherein the porous silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 23
Dependent Claim
23 words
The integrated circuit of claim 19 , wherein the porous silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 24
Dependent Claim
40 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductors from the transistors.
Claim 25
Dependent Claim
40 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductors from the transistors.
Claim 26
Dependent Claim
14 words
The integrated circuit of claim 22 , wherein the silicon oxycarbide insulator is porous.
Claim 27
Dependent Claim
14 words
The integrated circuit of claim 22 , wherein the first conductor is a metal.
Claim 28
Dependent Claim
13 words
The integrated circuit of claim 24 , wherein the first conductor includes aluminum.
Claim 29
Dependent Claim
38 words
The integrated circuit of claim 22 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 30
Dependent Claim
27 words
The integrated circuit of claim 26 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 31
Dependent Claim
29 words
The integrated circuit of claim 22 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 32
Dependent Claim
26 words
The integrated circuit of claim 22 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 33
Dependent Claim
25 words
The integrated circuit of claim 22 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 34
Dependent Claim
22 words
The integrated circuit of claim 30 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 35
Dependent Claim
22 words
The integrated circuit of claim 30 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 36
Dependent Claim
30 words
The integrated circuit of claim 22 , further comprising: a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 37
Dependent Claim
46 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.
Claim 38
Dependent Claim
46 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.
Claim 39
Dependent Claim
14 words
The integrated circuit of claim 34 , wherein the silicon oxycarbide insulator is porous.
Claim 40
Dependent Claim
18 words
The integrated circuit of claim 34 , wherein at least one of the first conductors is a metal.
Claim 41
Dependent Claim
20 words
The integrated circuit of claim 36 , wherein the metal of at least one of the first conductors includes aluminum.
Claim 42
Dependent Claim
38 words
The integrated circuit of claim 34 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 43
Dependent Claim
27 words
The integrated circuit of claim 38 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 44
Dependent Claim
29 words
The integrated circuit of claim 34 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 45
Dependent Claim
26 words
The integrated circuit of claim 34 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 46
Dependent Claim
25 words
The integrated circuit of claim 34 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 47
Dependent Claim
22 words
The integrated circuit of claim 42 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 48
Dependent Claim
22 words
The integrated circuit of claim 42 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 49
Dependent Claim
30 words
The integrated circuit of claim 34 , further comprising: a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 50
Dependent Claim
67 words
An integrated circuit formed on a substrate, comprising: a plurality of active device areas formed on the substrate; a plurality of first conductors interconnecting ones of the active device areas; a silicon oxycarbide insulator insulating portions of the first conductors layer from the active device areas; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductors from portions of the second conductor.
Claim 51
Dependent Claim
67 words
An integrated circuit formed on a substrate, comprising: a plurality of active device areas formed on the substrate; a plurality of first conductors interconnecting ones of the active device areas; a silicon oxycarbide insulator insulating portions of the first conductors layer from the active device areas; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductors from portions of the second conductor.
Claim 52
Dependent Claim
14 words
The integrated circuit of claim 46 , wherein the silicon oxycarbide insulator is porous.
Claim 53
Dependent Claim
18 words
The integrated circuit of claim 47 , wherein at least one of the first conductors is a metal.
Claim 54
Dependent Claim
20 words
The integrated circuit of claim 48 , wherein the metal of at least one of the first conductor includes aluminum.
Claim 55
Dependent Claim
38 words
The integrated circuit of claim 46 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 56
Dependent Claim
27 words
The integrated circuit of claim 50 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 57
Dependent Claim
29 words
The integrated circuit of claim 46 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 58
Dependent Claim
26 words
The integrated circuit of claim 46 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 59
Dependent Claim
25 words
The integrated circuit of claim 46 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 60
Dependent Claim
22 words
The integrated circuit of claim 54 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 61
Dependent Claim
22 words
The integrated circuit of claim 54 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 62
Dependent Claim
62 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 63
Dependent Claim
62 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a plurality of first conductors interconnecting ones of the transistors; and a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 64
Dependent Claim
14 words
The integrated circuit of claim 57 , wherein the silicon oxycarbide insulator is porous.
Claim 65
Dependent Claim
14 words
The integrated circuit of claim 57 , wherein the first conductor is a metal.
Claim 66
Dependent Claim
13 words
The integrated circuit of claim 59 , wherein the first conductor includes aluminum.
Claim 67
Dependent Claim
38 words
The integrated circuit of claim 57 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 68
Dependent Claim
27 words
The integrated circuit of claim 61 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 69
Dependent Claim
29 words
The integrated circuit of claim 57 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 70
Dependent Claim
26 words
The integrated circuit of claim 57 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 71
Dependent Claim
25 words
The integrated circuit of claim 57 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 72
Dependent Claim
22 words
The integrated circuit of claim 65 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 73
Dependent Claim
22 words
The integrated circuit of claim 65 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 74
Dependent Claim
66 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors; a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 75
Dependent Claim
66 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors; a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors; a second conductor; and wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.
Claim 76
Dependent Claim
14 words
The integrated circuit of claim 68 , wherein the silicon oxycarbide insulator is porous.
Claim 77
Dependent Claim
14 words
The integrated circuit of claim 68 , wherein the first conductor is a metal.
Claim 78
Dependent Claim
13 words
The integrated circuit of claim 70 , wherein the first conductor includes aluminum.
Claim 79
Dependent Claim
38 words
The integrated circuit of claim 68 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
Claim 80
Dependent Claim
27 words
The integrated circuit of claim 72 , wherein the silicon oxycarbide insulator has a surface area of approximately 300 square meters per gram of the silicon oxycarbide.
Claim 81
Dependent Claim
29 words
The integrated circuit of claim 68 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to that of silicon dioxide.
Claim 82
Dependent Claim
26 words
The integrated circuit of claim 68 , wherein the silicon oxycarbide insulator has a relative dielectric constant that is approximately less than or equal to 2.0.
Claim 83
Dependent Claim
25 words
The integrated circuit of claim 68 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter between 20 angstroms and 300 angstroms.
Claim 84
Dependent Claim
22 words
The integrated circuit of claim 76 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 30 angstroms.
Claim 85
Dependent Claim
22 words
The integrated circuit of claim 76 , wherein the silicon oxycarbide insulator includes voids that have an approximate diameter of 200 angstroms.
Claim 86
Dependent Claim
100 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive metal layer comprising a plurality of first conductors interconnecting ones of the transistors; a porous silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide; a second conductor; and wherein the silicon oxycarbide insulator also insulates portions of the first conductor from portions of the second conductor.
Claim 87
Dependent Claim
100 words
An integrated circuit formed on a substrate, comprising: a plurality of transistors formed on the substrate; a first conductive metal layer comprising a plurality of first conductors interconnecting ones of the transistors; a porous silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide; a second conductor; and wherein the silicon oxycarbide insulator also insulates portions of the first conductor from portions of the second conductor.
Claim 88
Dependent Claim
13 words
The integrated circuit of claim 79 , wherein the first conductor includes aluminum.
Claim 89
Dependent Claim
38 words
The integrated circuit of claim 79 , wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |