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US6054751A
Expired / Lapsed
US
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Semiconductor integrated circuit
Assignee: Denso Corp
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Filing: 1997-09-17
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Granted: 2000-04-25
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Expires: 2017-09-17
Abstract
Abstract In an integrated circuit in which function blocks constituting a CPU block, a memory block and the like, a power supply line for supplying power to the function blocks, and multiple signal lines for inputting and outputting signals to and from the function blocks are formed on a semiconductor substrate, bypass capacitors are provided on the power supply line in proximity to or inside the function blocks. The capacitances of these bypass capacitors are set in correspondence with the consumed current characteristics of the respective function blocks. As a result, noise produced on the power supply line by the operation of the function blocks can be suppressed and it is possible to certainly prevent such noise from leaking out through power supply terminals and input/output terminals of the integrated circuit to the outside.
Inventors
- 👤 Kouji Ichikawa
- 👤 Hiroshi Fujii
- 👤 Susumu Tsuruta
- 👤 Hideaki Ishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:31
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D84/00; H10D84/80; H10D84/811; H10D84/813; H10W; H10W20/00; H10W20/01
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
125 words
A semiconductor integrated circuit comprising: a plurality of function blocks constituted by an electronic circuit formed on a semiconductor substrate, each of which exhibits a specific function; power supply lines for supplying power to said plurality of function blocks; signal lines for inputting and outputting signals to and from said plurality of function blocks; and bypass capacitors respectively provided to said plurality of function blocks, each of said bypass capacitors including first and second electrodes connected to said power supply lines and formed in proximity to or inside a corresponding function block, the first and second electrodes being different from the power supply lines, wherein said power supply lines include first and second coplanar power supply lines respectively connected to said first and second electrodes.
Claim 2
Dependent Claim
125 words
A semiconductor integrated circuit comprising: a plurality of function blocks constituted by an electronic circuit formed on a semiconductor substrate, each of which exhibits a specific function; power supply lines for supplying power to said plurality of function blocks; signal lines for inputting and outputting signals to and from said plurality of function blocks; and bypass capacitors respectively provided to said plurality of function blocks, each of said bypass capacitors including first and second electrodes connected to said power supply lines and formed in proximity to or inside a corresponding function block, the first and second electrodes being different from the power supply lines, wherein said power supply lines include first and second coplanar power supply lines respectively connected to said first and second electrodes.
Claim 3
Dependent Claim
22 words
A semiconductor integrated circuit according to claim 1, wherein said bypass capacitors are provided in an interconnection region between said function blocks.
Claim 4
Dependent Claim
24 words
A semiconductor integrated circuit according to claim 1, wherein said function blocks provided with said bypass capacitors include at least an oscillating circuit block.
Claim 5
Dependent Claim
24 words
A semiconductor integrated circuit according to claim 1, wherein said function blocks provided with said bypass capacitors include at least an input-output interface block.
Claim 6
Dependent Claim
59 words
A semiconductor integrated circuit according to claim 2, wherein said interconnection region has a multilayer structure and said bypass capacitors are disposed in a lower side layer of said multilayer structure and said first and second electrodes of each said bypass capacitor consist of two polysilicon layers disposed in said lower side layer with an insulating film interposed therebetween.
Claim 7
Dependent Claim
28 words
A semiconductor integrated circuit according to claim 1, further comprising a MOS transistor including a gate electrode that is coplanar with the first electrode of the bypass capacitor.
Claim 8
Dependent Claim
77 words
A semiconductor integrated circuit comprising: a semiconductor substrate; a function block for performing a specified function and including an electronic circuit formed on said semiconductor substrate; first and second power supply lines for supplying power to said function block; and a bypass capacitor comprising opposing first and second electrodes each made of polysilicon and respectively connected to said first and second power supply lines, wherein said first and second power supply lines are coplanar with each other.
Claim 9
Dependent Claim
77 words
A semiconductor integrated circuit comprising: a semiconductor substrate; a function block for performing a specified function and including an electronic circuit formed on said semiconductor substrate; first and second power supply lines for supplying power to said function block; and a bypass capacitor comprising opposing first and second electrodes each made of polysilicon and respectively connected to said first and second power supply lines, wherein said first and second power supply lines are coplanar with each other.
Claim 10
Dependent Claim
22 words
A semiconductor integrated circuit according to claim 7, wherein said bypass capacitor is positioned in proximity to or inside said function block.
Claim 11
Dependent Claim
17 words
A semiconductor integrated circuit according to claim 7, wherein said function block is an input-output interface block.
Claim 12
Dependent Claim
24 words
A semiconductor integrated circuit according to claim 7, wherein said first and second power supply lines are made of a material different from polysilicon.
Claim 13
Dependent Claim
73 words
A semiconductor integrated circuit comprising: a semiconductor substrate; a function block for performing a specified function and including an electronic circuit formed on said semiconductor substrate; first and second power supply lines for supplying power to said function block; and a bypass capacitor comprising opposing first and second electrodes each made of polysilicon and respectively connected to said first and second power supply lines, wherein said function block is an oscillating circuit block.
Claim 14
Dependent Claim
73 words
A semiconductor integrated circuit comprising: a semiconductor substrate; a function block for performing a specified function and including an electronic circuit formed on said semiconductor substrate; first and second power supply lines for supplying power to said function block; and a bypass capacitor comprising opposing first and second electrodes each made of polysilicon and respectively connected to said first and second power supply lines, wherein said function block is an oscillating circuit block.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |