US6312568B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two-step AIN-PVD for improved film properties
Assignee: Applied Materials Inc
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Filing: 1999-12-07
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Granted: 2001-11-06
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Expires: 2019-12-07
Abstract
Abstract The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C. The advantages provided by the invention include an improved deposition rate for aluminum nitride with a preferred crystal orientation and improved layer properties.
Inventors
- 👤 Ingo Wilke
- 👤 Rochelle King
- 👤 Hoa Kieu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:29
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0042; H; H10; H10P; H10P14/00; H10P14/20; C23C14/06; C23C14/0617; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/076
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
81 words
A method of forming an aluminum nitride layer on a substrate in a processing chamber comprising: a. maintaining a first chamber pressure for a first period of time and depositing a first aluminum nitride layer at the first chamber pressure to form a nucleation film with a 0002 crystal orientation; and b. maintaining a second chamber pressure higher than the first chamber pressure for a second period of time and depositing a second aluminum nitride layer at the second chamber pressure.
Claim 2
Independent Claim
81 words
A method of forming an aluminum nitride layer on a substrate in a processing chamber comprising: a. maintaining a first chamber pressure for a first period of time and depositing a first aluminum nitride layer at the first chamber pressure to form a nucleation film with a 0002 crystal orientation; and b. maintaining a second chamber pressure higher than the first chamber pressure for a second period of time and depositing a second aluminum nitride layer at the second chamber pressure.
Claim 3
Dependent Claim
25 words
The method of claim 1 , wherein the first chamber pressure is maintained at a chamber pressure between about 1.5 milliTorr and about 3 milliTorr.
Claim 4
Dependent Claim
25 words
The method of claim 1 , wherein the second chamber pressure is maintained at a chamber pressure between about 5 milliTorr and about 10 milliTorr.
Claim 5
Dependent Claim
22 words
The method of claim 1 , wherein the first and second aluminum nitride layers are deposited sequentially in the same processing chamber.
Claim 6
Dependent Claim
50 words
The method of claim 1 , wherein depositing the first aluminum nitride layer comprises sputtering an aluminum target in a first plasma comprising nitrogen and an inert gas and depositing the second aluminum nitride layer comprises sputtering an aluminum target in a second plasma comprising nitrogen and an inert gas.
Claim 7
Dependent Claim
35 words
The method of claim 5 , wherein the first plasma and the second plasma are generated by supplying power between about 4000 watts and about 7000 watts to a target disposed in the processing chamber.
Claim 8
Dependent Claim
35 words
The method of claim 1 , wherein sputtering the aluminum target comprises generating a first plasma to deposit the first aluminum nitride layer and generating a second plasma to deposit the second aluminum nitride layer.
Claim 9
Independent Claim
92 words
A method of processing a substrate in a processing chamber, comprising: a. introducing a first nitrating process gas into the processing chamber at a first chamber pressure; b. generating a first plasma in the processing chamber and sputtering an aluminum target to deposit a first aluminum nitride layer; c. introducing a second nitrating process gas into the processing chamber at a second chamber pressure higher than the first chamber pressure; and d. generating a second plasma in the processing chamber and sputtering an aluminum target to deposit a second aluminum nitride layer.
Claim 10
Independent Claim
92 words
A method of processing a substrate in a processing chamber, comprising: a. introducing a first nitrating process gas into the processing chamber at a first chamber pressure; b. generating a first plasma in the processing chamber and sputtering an aluminum target to deposit a first aluminum nitride layer; c. introducing a second nitrating process gas into the processing chamber at a second chamber pressure higher than the first chamber pressure; and d. generating a second plasma in the processing chamber and sputtering an aluminum target to deposit a second aluminum nitride layer.
Claim 11
Dependent Claim
20 words
The method of claim 8 , wherein the first chamber pressure is between about 1.5 milliTorr and about 3 milliTorr.
Claim 12
Dependent Claim
22 words
The method of claim 8 , wherein the first nitrating gas and the second nitrating gas comprise nitrogen and an inert gas.
Claim 13
Dependent Claim
20 words
The method of claim 8 , wherein the second chamber pressure is between about 5 mlliliTorr and about 10 milliTorr.
Claim 14
Dependent Claim
22 words
The method of claim 8 , wherein the first and second aluminum nitride layers are deposited sequentially in the same processing chamber.
Claim 15
Dependent Claim
32 words
The method of claim 8 , wherein the first plasma and second plasma are generated by supplying a power of between about 4000 watts and about 7000 watts to the aluminum target.
Claim 16
Dependent Claim
22 words
The method of claim 8 , wherein the substrate is maintained at a temperature between about 125° C. and about 500° C.
Claim 17
Independent Claim
97 words
A method of forming an aluminum nitride layer on a substrate in a processing chamber comprising: a. depositing a first aluminum nitride layer by sputtering an aluminum target in a first nitrogen and inert gas plasma at a first chamber pressure maintained between about 1.5 milliTorr and about 3 milliTorr for a first period of time; and b. depositing a second aluminum nitride layer by sputtering the aluminum target in a second nitrogen and inert gas plasma at a second chamber pressure maintained between about 5 milliTorr and about 10 milliTorr for a second period of time.
Claim 18
Independent Claim
97 words
A method of forming an aluminum nitride layer on a substrate in a processing chamber comprising: a. depositing a first aluminum nitride layer by sputtering an aluminum target in a first nitrogen and inert gas plasma at a first chamber pressure maintained between about 1.5 milliTorr and about 3 milliTorr for a first period of time; and b. depositing a second aluminum nitride layer by sputtering the aluminum target in a second nitrogen and inert gas plasma at a second chamber pressure maintained between about 5 milliTorr and about 10 milliTorr for a second period of time.
Claim 19
Dependent Claim
21 words
The method of claim 15 , wherein the first aluminum nitride layer nucleates the deposition of the second aluminum nitride layer.
Claim 20
Dependent Claim
22 words
The method of claim 15 , wherein the substrate is maintained at a temperature between about 125° C. and about 500° C.
Claim 21
Dependent Claim
43 words
The method of claim 15 , wherein sputtering the aluminum target in the first nitrogen and inert gas plasma comprises generating a plasma by supplying power between about 4000 watts and about 7000 watts to the aluminum target disposed in the processing chamber.
Claim 22
Dependent Claim
43 words
The method of claim 15 , wherein sputtering the aluminum target in the second nitrogen and inert gas plasma comprises generating a plasma by supplying power between about 4000 watts and about 7000 watts to the aluminum target disposed in the processing chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |