Abstract An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.
An integrated circuit comprising: a) a substrate; b) a first dielectric layer contacting the substrate at an interface; c) a second dielectric layer contacting the first dielectric layer at an interface, the second dielectric layer including a plurality of conducting regions d) a third dielectric layer contacting the second dielectric layer at an interface; and e) an inductor fabricated above the second dielectric layer, f) wherein the plurality of conducting regions induce small eddy currents that do not significantly reduce the inductance of the inductor.
Claim 2
Dependent Claim
85 words
An integrated circuit comprising: a) a substrate; b) a first dielectric layer contacting the substrate at an interface; c) a second dielectric layer contacting the first dielectric layer at an interface, the second dielectric layer including a plurality of conducting regions d) a third dielectric layer contacting the second dielectric layer at an interface; and e) an inductor fabricated above the second dielectric layer, f) wherein the plurality of conducting regions induce small eddy currents that do not significantly reduce the inductance of the inductor.
Claim 3
Dependent Claim
16 words
The integrated circuit according to claim 1 , wherein the substrate is a high resistivity substrate.
Claim 4
Dependent Claim
18 words
The integrated circuit according to claim 2 , wherein the resistivity of the substrate is about 1 kohm-cm.
Claim 5
Dependent Claim
17 words
The integrated circuit according to claim 1 , wherein the first dielectric layer consists of silicon oxide.
Claim 6
Dependent Claim
19 words
The integrated circuit according to claim 4 , wherein the third dielectric layer includes at least one oxide layer.