Monolithic passive component

Claim 2

A monolithic integrated circuit, comprising: a silicon substrate having a surface and provided with a pit which defines a space located below the substrate surface and which opens at the substrate surface; a plurality of semiconductor circuit elements formed on the substrate; an insulating layer formed on the substrate and extending across the pit; and a planar spiral inductor positioned over the pit so that the inductor is spaced from the underlying substrate by the pit and supported by the insulating layer, said inductor being one of electrically or mechanically coupled to at least one of the semiconductor circuit elements.

Claim 3

The integrated circuit of claim 1 wherein the insulating layer overlying the pit defines a bridge structure which suspends the inductor overlying the pit.

Claim 4

The integrated circuit of claim 2 wherein the insulating layer encapsulates the inductor.

Claim 5

The integrated circuit of claim 1 wherein the pit is filled with an insulating medium.

Claim 6

The integrated circuit of claim 4 wherein the insulating medium is air.

Claim 7

The integrated circuit of claim 1 wherein a ferro-magnetic core is positioned within the pit.

Claim 8

The integrated circuit of claim 1 wherein the semiconductor circuit elements include transistors.

Claim 9

The integrated circuit of claim 7 wherein the transistors are interconnected to form an RF amplifier.

Claim 10

A process for forming an integrated RF tuned amplifier circuit, comprising the steps of: forming a plurality of transistors on a silicon substrate; forming an oxide layer on the substrate and at least a portion of the transistor; forming a metallization layer on the oxide layer, said metallization layer including a spiral-shaped inductor and a plurality of interconnections which interconnect the transistors and the inductor as an RF amplifier circuit; applying an etchant through openings in the oxide layer to remove a portion of the substrate beneath the inductor and the oxide layer to form a pit beneath the inductor and the oxide layer to reduce parasitic capacitance between the inductor and the underlying substrate.

Claim 11

A process for forming an integrated RF tuned amplifier circuit, comprising the steps of: forming a plurality of transistors on a silicon substrate; forming an oxide layer on the substrate and at least a portion of the transistor; forming a metallization layer on the oxide layer, said metallization layer including a spiral-shaped inductor and a plurality of interconnections which interconnect the transistors and the inductor as an RF amplifier circuit; applying an etchant through openings in the oxide layer to remove a portion of the substrate beneath the inductor and the oxide layer to form a pit beneath the inductor and the oxide layer to reduce parasitic capacitance between the inductor and the underlying substrate.

Claim 12

The process of claim 9 wherein the transistors are CMOS.

Claim 13

The process of claim 9 wherein the transistors are bipolar.

Claim 14

The process of claim 9 wherein the etchant applying step removes sufficient silicon substrate to reduce the parasitic capacitance by approximately an order of magnitude.

Claim 15

A monolithic integrated high frequency circuit, comprising: a silicon substrate having a surface and provided with a pit which defines a space located below the substrate surface and which opens at the substrate surface; a plurality of semiconductor circuit elements formed on the substrate; an insulating layer formed on the substrate and extending across the pit; and a spiral inductor having a planar portion positioned over the pit so that the inductor is spaced from the underlying substrate by the pit and supported by the insulating layer, said inductor being electrically connected to at least one of the semiconductor circuit elements to form the integrated high frequency circuit.

Claim 16

A monolithic integrated high frequency circuit, comprising: a silicon substrate having a surface and provided with a pit which defines a space located below the substrate surface and which opens at the substrate surface; a plurality of semiconductor circuit elements formed on the substrate; an insulating layer formed on the substrate and extending across the pit; and a spiral inductor having a planar portion positioned over the pit so that the inductor is spaced from the underlying substrate by the pit and supported by the insulating layer, said inductor being electrically connected to at least one of the semiconductor circuit elements to form the integrated high frequency circuit.

Claim 17

The circuit of claim 13 wherein the inductor has an inductance in excess of 1 nH.

Claim 18

The circuit of claim 13 wherein the pit is filled with an insulating gas and the device is suspended over the gas-filled pit by the insulating layer.

Claim 19

The circuit of claim 6 wherein the insulating gas is air.

Claim 20

The circuit of claim 13 wherein the device is encapsulated in the insulating layer.

Claim 21

The circuit of claim 13 wherein the layer portion overlying the pit defines a plurality of openings.

Claim 22

The circuit of claim 18 wherein the layer portion defines a central island portion carrying the device, and further defines elongated portions positioned between adjacent openings and coupling the central island portion to the surrounding layer and suspends the central island portion over the pit.

Claim 23

The circuit of claim 19 further comprising a conductor coupled to the inductor and supported by an elongated layer portion overlying the pit.

Claim 24

The circuit of claim 13 wherein the inductor is spiral-shaped.

Claim 25

The circuit of claim 21 wherein the spiral of the inductor is one of circular or polygonal shaped.

Claim 26

The circuit of claim 22 wherein the polygonal shape includes one of a square, a hexagon and an octagon.

Claim 27

The circuit of claim 13 wherein the inductor has an inductance greater than 1 nH and a self-resonance greater than 10 MHz.

Claim 28

The circuit of claim 24 wherein the inductor has an inductance of approximately 100 nH.

Claim 29

The circuit of claim 13 further comprising a transistor circuit monolithically formed on the substrate and electrically coupled to the inductor.

Claim 30

The circuit of claim 26 wherein the transistor circuit is an RF circuit.

Claim 31

The circuit of claim 13 wherein the inductor is a transformer having a primary coil and a secondary coil.

Claim 32

The circuit of claim 13, wherein the inductor is an inductor has two stacked planar spirals.

Claim 33

A process for forming a monolithic integrated high frequency circuit, comprising the steps of: providing a substrate having a surface; forming an insulating layer on the substrate surface; forming an inductor on the insulating layer so that the inductor is supported by the insulating layer; and removing material from a portion of the substrate to form a pit in the substrate which is located beneath the inductor, thereby reducing parasitic capacitance between the inductor and the substrate, while the inductor remains supported by portions of the substrate surface which surround the pit.

Claim 34

A process for forming a monolithic integrated high frequency circuit, comprising the steps of: providing a substrate having a surface; forming an insulating layer on the substrate surface; forming an inductor on the insulating layer so that the inductor is supported by the insulating layer; and removing material from a portion of the substrate to form a pit in the substrate which is located beneath the inductor, thereby reducing parasitic capacitance between the inductor and the substrate, while the inductor remains supported by portions of the substrate surface which surround the pit.

Claim 35

The process of claim 30 wherein the of removing material forms the openings in a predetermined orientation so that the pit formed in the substrate has a generally inverted pyramid-like shape.

Claim 36

The process of claim 31 wherein the step of removing material is terminated so that the generally inverted pyramid-like shape of the pit formed in the substrate is truncated.