US6298079B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium nitride type laser for emitting blue light
Assignee: Rohm Co Ltd
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Filing: 1999-09-09
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Granted: 2001-10-02
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Expires: 2019-09-09
Abstract
Abstract In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
Inventors
- 👤 Haruo Tanaka
- 👤 Yukio Shakuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:13
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/02; H01S5/026; H01S5/0267; H01S5/04; H01S5/042; H01S5/06; H01S5/065; H01S5/0651; H01S5/0653; H01S5/0654; H01S5/068; H01S5/0683; H01S5/10; H01S5/1053; H01S5/1064; H01S5/1082; H01S5/1085; H01S5/2205; H01S5/2206; H01S5/221; H01S5/2218; H01S5/2219; H01S5/32341
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
134 words
A semiconductor laser comprising: a substrate; a buffer layer made of GaN; a lower cladding layer made of a first conductive type Al z Ga 1−z N (0<z<1); an active layer made of In x Ga 1−x N (0<x<1); an absorption layer made of a second conductive type In r Ga 1−r N (0<r<1,r≦x); a second upper cladding layer made of a second conductive type Al z Ga 1−z N (0<z<1); a current blocking layer made of a first conductive type AlN having a stripe-like opening; a third upper cladding layer made of a second conductive type Al z Ga 1−z N (0<z<1); a second conductive type contact layer; an upper electrode being provided on said contact layer; and a lower electrode being connected to said lower cladding layer or to said buffer layer.
Claim 2
Dependent Claim
134 words
A semiconductor laser comprising: a substrate; a buffer layer made of GaN; a lower cladding layer made of a first conductive type Al z Ga 1−z N (0<z<1); an active layer made of In x Ga 1−x N (0<x<1); an absorption layer made of a second conductive type In r Ga 1−r N (0<r<1,r≦x); a second upper cladding layer made of a second conductive type Al z Ga 1−z N (0<z<1); a current blocking layer made of a first conductive type AlN having a stripe-like opening; a third upper cladding layer made of a second conductive type Al z Ga 1−z N (0<z<1); a second conductive type contact layer; an upper electrode being provided on said contact layer; and a lower electrode being connected to said lower cladding layer or to said buffer layer.
Claim 3
Dependent Claim
43 words
The semiconductor laser according to claim 1 , wherein said active layer is made of In x Ga 1−x N (0<x<1) and said absorption layer is made of In r Ga 1−r N (0<r<1), where x and r have a relation of 0<x/2≦r≦x<1.
Claim 4
Dependent Claim
39 words
The semiconductor laser according to claim 1 , wherein a thickness of d 1 of said active layer and a thickness of d 2 of said absorption layer have a relation of d 1 /2≦d 2 ≦2d 1 .
Claim 5
Dependent Claim
28 words
The semiconductor laser according to claim 1 , wherein a distance t between said active layer and said absorption layer is in a range of 0.1 μm≦t≦0.4 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-10-01 | 2005-04-02 | 2005-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-10-01 | 2009-04-02 | 2009-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-10-01 | 2013-04-02 | 2013-10-02 | $7700.00 | Window Closed / Lapsed |