US5268328A
Expired / Lapsed
US
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Method of fabricating a semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1992-12-16
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Granted: 1993-12-07
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Expires: 2012-12-16
Abstract
Abstract A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide.
Inventors
- 👤 Yoshihiro Mori
- 👤 Masaya Mannoh
- 👤 Satoshi Kamiyama
- 👤 Kiyoshi Ohnaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:41
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2205; H01S5/2206; H01S5/221; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
194 words
A method of fabricating a semiconductor laser by a process comprising the steps of: 1) successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic; 2) forming a mask for etching the current blocking layer on the thin-film layer; 3) selectively etching said current blocking layer in the form of a stripe; 4) buffer-etching said current blocking layer and said mask simultaneously by the use of an etchant capable of selectively etching the current blocking layer and said mask and exposing a surface of said current blocking layer and said thin-film layer wherein a Group V element consisting of arsenic appears at said surface; and 5) forming on said current blocking layer and said thin-film layer by crystal growth an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic in an atmosphere having a Group V element consisting of arsenic.
Claim 2
Independent Claim
194 words
A method of fabricating a semiconductor laser by a process comprising the steps of: 1) successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic; 2) forming a mask for etching the current blocking layer on the thin-film layer; 3) selectively etching said current blocking layer in the form of a stripe; 4) buffer-etching said current blocking layer and said mask simultaneously by the use of an etchant capable of selectively etching the current blocking layer and said mask and exposing a surface of said current blocking layer and said thin-film layer wherein a Group V element consisting of arsenic appears at said surface; and 5) forming on said current blocking layer and said thin-film layer by crystal growth an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic in an atmosphere having a Group V element consisting of arsenic.
Claim 3
Dependent Claim
23 words
A method of fabricating a semiconductor laser according to claim 1, wherein said crystal growth is carried out by metal-organic vapor phase epitaxy.
Claim 4
Independent Claim
195 words
A method of fabricating a semiconductor laser by process comprising the steps of; successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, a current blocking layer comprised of a second-conductivity type compound semiconductor, a compound semiconductor protective layer and a compound semiconductor mask layer; selectively etching said compound semiconductor mask layer in the form of a stripe; selectively etching the uncovered part of said compound semiconductor protective layer; simultaneously selectively etching the uncovered part of said current blocking layer and said compound semiconductor mask layer and exposing a surface of said current blocking layer, said protective layer and said thin-film layer wherein said a Group V element insisting of arsenic appears at said surface; and forming on the sides of a groove in said current blocking layer, said protective layer and said thin-film layer by crystal growth an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic in an atmosphere having a Group V element consisting of arsenic.
Claim 5
Independent Claim
195 words
A method of fabricating a semiconductor laser by process comprising the steps of; successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, a current blocking layer comprised of a second-conductivity type compound semiconductor, a compound semiconductor protective layer and a compound semiconductor mask layer; selectively etching said compound semiconductor mask layer in the form of a stripe; selectively etching the uncovered part of said compound semiconductor protective layer; simultaneously selectively etching the uncovered part of said current blocking layer and said compound semiconductor mask layer and exposing a surface of said current blocking layer, said protective layer and said thin-film layer wherein said a Group V element insisting of arsenic appears at said surface; and forming on the sides of a groove in said current blocking layer, said protective layer and said thin-film layer by crystal growth an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic in an atmosphere having a Group V element consisting of arsenic.
Claim 6
Dependent Claim
23 words
A method of fabricating a semiconductor laser according to claim 3, wherein said crystal growth is carried out by metal-organic vapor phase epitaxy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-06 | 1997-06-07 | 1997-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-06 | 2001-06-07 | 2001-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-06 | 2005-06-07 | 2005-12-07 | $7700.00 | Window Closed / Lapsed |