US5185755A
Expired / Lapsed
US
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Semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1991-09-06
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Granted: 1993-02-09
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Expires: 2011-09-06
Abstract
Abstract A semiconductor laser comprising an active waveguide formed of a compound semiconductor comprising a Group V element phosphorous, comprised of an active layer and two cladding layers that hold the active layer between them, and a current confinement structure formed on the active waveguide by the use of a compound semiconductor comprising Group V element arsenic. This semiconductor laser can achieve a small astigmatism, a low threshold current and a low operation current. Also disclosed is a method of fabricating a semiconductor laser having characteristic features that the crystal growth may be carried out only twice, the movement of the impurities in crystals does not easily occur, a regrowth interface with a very little defect can be readily obtained, and the structure wherein the outer cladding layer has a smaller width at its portion nearer to the active waveguide can be naturally formed.
Inventors
- 👤 Yoshihiro Mori
- 👤 Masaya Mannoh
- 👤 Satoshi Kamiyama
- 👤 Kiyoshi Ohnaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:34
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2205; H01S5/2206; H01S5/221; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
132 words
A semiconductor laser comprising: an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus; a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed in contact with a main surface of said active waveguide; a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic, formed on said thin-film layer to have outwards sloping sides, said outward sloping sides forming a groove exposing a portion of said thin-film layer as a strip with a given width; and an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and having a larger refractive index than said current blocking layer, formed on said current blocking layer and said thin-film layer.
Claim 2
Dependent Claim
132 words
A semiconductor laser comprising: an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus; a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed in contact with a main surface of said active waveguide; a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic, formed on said thin-film layer to have outwards sloping sides, said outward sloping sides forming a groove exposing a portion of said thin-film layer as a strip with a given width; and an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and having a larger refractive index than said current blocking layer, formed on said current blocking layer and said thin-film layer.
Claim 3
Dependent Claim
37 words
A semiconductor laser according to claim 1, wherein said active layer comprises a laminated structure comprised of an AlGaInP layer and a GaInP layer, or a laminated structure comprised of two or more kinds of AlGaInP layers.
Claim 4
Dependent Claim
54 words
A semiconductor laser according to claim 1, wherein said outer cladding layer has composition represented by the formula Al x1 Ga 1-x1 As (0≦x1≦1); said current blocking layer, composition represented by the formula Al y1 Ga 1-y1 As (0≦y1≦1); and said thin-film layer, composition represented by the formula Al z1 Ga 1-z1 As (0≦z1≦1).
Claim 5
Dependent Claim
22 words
A semiconductor laser according to claim 3, wherein x1 is 0.6 to 0.8, y1 is 0.8 to 1 and z is 0.
Claim 6
Dependent Claim
38 words
A semiconductor laser according to claim 1, wherein a protective layer comprised of a semiconductor laser comprising a Group V element arsenic is formed between the main surface of said current blocking layer and said outer cladding layer.
Claim 7
Dependent Claim
21 words
A semiconductor laser according to claim 5, wherein said protective layer has composition represented by Al z1 Ga 1-z1 As (0≦z1≦1).
Claim 8
Dependent Claim
141 words
A semiconductor laser comprising: an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus; a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed in contact with a main surface of said active waveguide; a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic and having the same band gap as, or a smaller band gap than, the photon energy of emitted laser light, formed on said thin-film layer to have outwards sloping sides, said outward sloping sides forming a groove exposing a portion of said thin-film layer as a strip with a given width; and an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed on said current blocking layer and said thin-film layer.
Claim 9
Dependent Claim
141 words
A semiconductor laser comprising: an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus; a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed in contact with a main surface of said active waveguide; a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic and having the same band gap as, or a smaller band gap than, the photon energy of emitted laser light, formed on said thin-film layer to have outwards sloping sides, said outward sloping sides forming a groove exposing a portion of said thin-film layer as a strip with a given width; and an outer cladding layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic, formed on said current blocking layer and said thin-film layer.
Claim 10
Dependent Claim
37 words
A semiconductor laser according to claim 7, wherein said active layer comprises a laminated structure comprised of an AlGaInP layer and a GaInP layer, or a laminated structure comprised of two or more kinds of AlGaInP layers.
Claim 11
Dependent Claim
49 words
A semiconductor laser according to claim 7, wherein said outer cladding layer has composition represented by the formula Al x2 Ga 1-x2 As (0.6≦x2≦1); said current blocking layer, composition represented by the formula Al y2 Ga 1-y2 As (0≦y2≦0.3); and said thin-film layer, composition represented by the formula GaAs.
Claim 12
Dependent Claim
38 words
A semiconductor laser according to claim 7, wherein a protective layer comprised of a semiconductor layer comprising a Group V element arsenic is formed between the main surface of said current blocking layer and said outer cladding layer.
Claim 13
Dependent Claim
21 words
A semiconductor laser according to claim 10, wherein said protective layer has composition represented by Al z2 Ga 1-z2 As (0≦z2≦1).
References Cited (Backward Citations)
US5036521A
Cited
US5058120A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-09 | 1996-08-10 | 1997-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-09 | 2000-08-10 | 2001-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-09 | 2004-08-10 | 2005-02-09 | $7700.00 | Window Closed / Lapsed |