Patent US6284643B1 successfully refreshed from Google Patents.
US6284643B1
Expired / Lapsed
US
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Electrical and thermal contact for use in semiconductor devices
Assignee: Round Rock Research LLC
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Filing: 2000-05-11
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Granted: 2001-09-04
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Expires: 2020-05-11
Abstract
Abstract An electrical and thermal contact for use in a semiconductor device. The electrical and thermal contact includes an intermediate conductive layer, an insulator component, and a contact layer. The intermediate conductive layer may contact a structure of the semiconductor device. The insulator component, which is fabricated from a thermally and electrically insulative material, may be sandwiched between the intermediate conductive layer and the contact layer, which may substantially envelop the insulator component. The electrical and thermal contact may be fabricated by a process which includes forming a first thin layer on a surface of the semiconductor device, depositing a dielectric layer adjacent the first thin layer, patterning the dielectric layer to define the insulator component, forming a second thin layer adjacent the insulator component and in partial contact with the first thin layer, and patterning the first and second thin layers to define the intermediate conductive layer and the contact layer, respectively. Due to its structure, which requires relatively little electrical current to generate a desired amount of heat, the electrical and thermal contact effectively contains heat within and prevents heat from dissipating from a contacted structure, and is particularly useful for contacting and inducing a change in the electrical conductivity of structures which include phase change materials.
Inventors
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:02
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/011; H10N70/801; H10N70/821; H10N70/826; H10N70/861; H10N70/881; H10N70/882; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
87 words
A process for fabricating a contact on a semiconductor device, comprising: forming a first layer comprising conductive material on a surface of the semiconductor device and in electrical and thermal communication with a structure thereof; forming a thermal insulator component substantially over said structure; forming a second layer comprising a conductive material at least partially over said thermal insulator component and in communication with said first layer; and patterning said first layer and said second layer, said first and second layers remaining in communication with one another.
Claim 2
Dependent Claim
87 words
A process for fabricating a contact on a semiconductor device, comprising: forming a first layer comprising conductive material on a surface of the semiconductor device and in electrical and thermal communication with a structure thereof; forming a thermal insulator component substantially over said structure; forming a second layer comprising a conductive material at least partially over said thermal insulator component and in communication with said first layer; and patterning said first layer and said second layer, said first and second layers remaining in communication with one another.
Claim 3
Dependent Claim
33 words
The process of claim 1 , wherein said forming said first layer comprises forming at least said conductive material of said first layer to have a thickness of about 200 angstroms or less.
Claim 4
Dependent Claim
34 words
The process of claim 1 , wherein said forming said thermal insulator component comprises forming said thermal insulator component from a material comprising at least one of silicon oxide, thermoset resin, and thermoplastic polymer.
Claim 5
Dependent Claim
23 words
The process of claim 1 , wherein said forming said thermal insulator component comprises forming a dielectric layer and patterning said dielectric layer.
Claim 6
Dependent Claim
14 words
The process of claim 4 , wherein said patterning said dielectric layer comprises etching.
Claim 7
Dependent Claim
18 words
The process of claim 5 , wherein said etching comprises employing said first layer as an etch stop.
Claim 8
Dependent Claim
31 words
The process of claim 1 , wherein said forming second layer comprises forming at least conductive material of said second layer to have a thickness of about 200 angstroms or less.
Claim 9
Dependent Claim
32 words
The process of claim 1 , wherein said forming said first layer comprises disposing at least said conductive material in electrical and thermal communication with a phase change component of said structure.
Claim 10
Dependent Claim
50 words
The process of claim 8 , wherein said disposing at least said conductive material of said first layer in electrical and thermal communication with said phase change component comprises disposing at least said conductive material of said first layer in electrical and thermal communication with a chalcogenide phase change component.
Claim 11
Dependent Claim
26 words
The process of claim 8 , wherein said patterning said dielectric layer comprises defining said thermal insulator component at least partially over said phase change component.
Claim 12
Dependent Claim
21 words
The process of claim 1 , wherein said patterning said first layer and said second layer comprises forming an electrical trace.
Claim 13
Independent Claim
96 words
A method for thermally insulating a phase change component of a semiconductor device structure, comprising the steps of: forming a first conductive layer in communication with said phase change component; forming a thermal insulator component over at least a portion of said first conductive layer and positioned to at least partially thermally insulate said phase change component; forming a second conductive layer over said thermal insulator component and in communication with said first conductive layer; and patterning said first and second conductive layers so as to maintain said communication between said first and second conductive layers.
Claim 14
Independent Claim
96 words
A method for thermally insulating a phase change component of a semiconductor device structure, comprising the steps of: forming a first conductive layer in communication with said phase change component; forming a thermal insulator component over at least a portion of said first conductive layer and positioned to at least partially thermally insulate said phase change component; forming a second conductive layer over said thermal insulator component and in communication with said first conductive layer; and patterning said first and second conductive layers so as to maintain said communication between said first and second conductive layers.
Claim 15
Dependent Claim
33 words
The method of claim 12 , wherein said forming said first conductive layer comprises disposing in communication with said phase change component conductive material having a thickness of at most about 200 angstroms.
Claim 16
Dependent Claim
34 words
The method of claim 12 , wherein said forming said thermal insulator component comprises forming said thermal insulator component from a material comprising at least one of silicon oxide, thermoset resin, and thermoplastic polymer.
Claim 17
Dependent Claim
36 words
The method of claim 12 , wherein said forming said thermal insulator component comprises the steps of: forming a thermal insulator layer at least partially over said first conductive layer; and patterning said thermal insulator layer.
Claim 18
Dependent Claim
19 words
The method of claim 15 , wherein said patterning said thermal insulator layer comprises etching said thermal insulator layer.
Claim 19
Dependent Claim
23 words
The method of claim 16 , wherein said etching said thermal insulator layer comprises employing said first conductive layer as an etch stop.
Claim 20
Dependent Claim
29 words
The method of claim 12 , wherein said forming said second conductive layer comprises forming said second conductive layer to have a thickness of at most about 200 angstroms.
Claim 21
Independent Claim
87 words
A method for fabricating a contact for a semiconductor device structure including a phase change component, comprising the steps of: forming a first conductive structure in communication with the phase change component; forming a thermal insulator component in contact with said first conductive structure, opposite the phase change component and positioned to at least partially thermally insulate the phase change component; and forming a second conductive structure in contact with said thermal insulator component, opposite said first conductive structure and in communication with said first conductive structure.
Claim 22
Independent Claim
87 words
A method for fabricating a contact for a semiconductor device structure including a phase change component, comprising the steps of: forming a first conductive structure in communication with the phase change component; forming a thermal insulator component in contact with said first conductive structure, opposite the phase change component and positioned to at least partially thermally insulate the phase change component; and forming a second conductive structure in contact with said thermal insulator component, opposite said first conductive structure and in communication with said first conductive structure.
Claim 23
Dependent Claim
35 words
The method of claim 19 , wherein said forming said first conductive structure comprises the steps of: disposing a first conductive layer in communication with the phase change component; and patterning said first conductive layer.
Claim 24
Dependent Claim
40 words
The method of claim 20 , wherein said forming said second conductive structure comprises the steps of: disposing a second conductive layer adjacent said thermal insulator component, opposite one of said first conductive layer; and patterning said second conductive layer.
Claim 25
Dependent Claim
19 words
The method of claim 21 , wherein said patterning said first and second conductive layers are effected substantially concurrently.
Claim 26
Dependent Claim
28 words
The method of claim 19 , wherein said forming said thermal insulator component comprises the steps of: forming a thermal insulator layer; and patterning said thermal insulator layer.
Claim 27
Dependent Claim
34 words
The method of claim 19 , wherein said forming said thermal insulator component comprises forming said thermal insulator component from a material comprising at least one of silicon oxide, thermoset resin, and thermoplastic polymer.
References Cited (Backward Citations)
US4590589A
Cited
US5296716A
Cited
US5451811A
Cited
US5208177A
Cited
US5250459A
Cited
US5486707A
Cited
US5264725A
Cited
US5521423A
Cited
US5485031A
Cited
US5760462A
Cited
US5789758A
Cited
US5920788A
Cited
US6077729A
Cited
US5631862A
Cited
US5792594A
Cited
US5761115A
Cited
US6025220A
Cited
US5789277A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-09-03 | 2005-03-05 | 2005-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-09-03 | 2009-03-05 | 2009-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-09-03 | 2013-03-05 | 2013-09-04 | $7700.00 | Window Closed / Lapsed |