US6284050B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
Assignee: NOVELILUS SYSTEMS Inc
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Filing: 1998-05-18
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Granted: 2001-09-04
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Expires: 2018-05-18
Abstract
Abstract An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The system includes an ultraviolet lamp and a tube-shaped monomer distribution system positioned over the wafer allowing ultraviolet irradiation of the wafer before, during and/or after deposition. Processes for depositing organic polymer films on semiconductor wafers are also provided. The processes include one or more depositions, one or more ultraviolet exposures, and one or more anneals.
Inventors
- 👤 Jianou Shi
- 👤 James C. Mitchener
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:03
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; B05D3/00; B05D3/06; B05D3/061; B05D3/065; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/44; C23C16/48; C23C16/482; C23C16/56; H10P14/6502; H10P14/6506; H10P14/6509; H10P14/68; H10P14/683; H10P95/00; H10P95/08; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/687
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
52 words
A process for depositing a polymer film on a semiconductor wafer comprising: depositing a layer of a low dielectric constant polymer material on said wafer by chemical vapor deposition to form a coated wafer; exposing said coated wafer to ultraviolet radiation; and heating said coated wafer, wherein the polymer film is annealed.
Claim 2
Dependent Claim
52 words
A process for depositing a polymer film on a semiconductor wafer comprising: depositing a layer of a low dielectric constant polymer material on said wafer by chemical vapor deposition to form a coated wafer; exposing said coated wafer to ultraviolet radiation; and heating said coated wafer, wherein the polymer film is annealed.
Claim 3
Dependent Claim
20 words
The process as in claim 1 wherein the low dielectric constant polymer material is a poly(p-xylylene) or a fluorinated poly(p-xylylene).
Claim 4
Dependent Claim
23 words
The process as in claim 2 wherein the low dielectric constant polymer material is Parylene AF4, Parylene N, Parylene C, or Parylene D.
Claim 5
Dependent Claim
26 words
The process as in claim 1 wherein the low dielectric constant polymer material is a material selected from the group consisting of Polynaphthalene-N, Polynaphthalene-F, and polytetrafluoroethylene.
Claim 6
Dependent Claim
48 words
A process for increasing the adhesion of a polymer film to a semiconductor wafer comprising: depositing a film of a low dielectric constant polymer material on said wafer; and subsequently exposing said wafer to ultraviolet radiation, wherein the adhesion of said film to said semiconductor wafer is increased.
Claim 7
Dependent Claim
48 words
A process for increasing the adhesion of a polymer film to a semiconductor wafer comprising: depositing a film of a low dielectric constant polymer material on said wafer; and subsequently exposing said wafer to ultraviolet radiation, wherein the adhesion of said film to said semiconductor wafer is increased.
Claim 8
Dependent Claim
18 words
The process as in claim 5 wherein the low dielectric constant polymer material is poly(p-xylylene) or fluorinated poly(p-xylylene).
Claim 9
Dependent Claim
23 words
The process as in claim 6 wherein the low dielectric constant polymer material is Parylene AF4, Parylene N, Parylene C, or Parylene D.
Claim 10
Dependent Claim
51 words
The process as in claim 5 wherein the low dielectric constant polymer material is a material selected from the group consisting of Polynaphthalene-N, Polynaphthalene-F, polytetrafluoroethylene, polyimides, fluorinated polyimides, poly(arylene ethers), fluorinated poly(arylene ethers) benzocyclobutene, fluorinated benzocyclobutene, polycyclonorbornenes, hydrogen silsesquioxanes, organo silsesquioxanes, nanofoam polymers or aerogels, porous polyimides, and nanoporous silica aerogels.
Claim 11
Dependent Claim
25 words
A process for depositing a polymer film on a semiconductor wafer comprising exposing said wafer to ultraviolet radiation during chemical vapor deposition of said film.
Claim 12
Dependent Claim
25 words
A process for depositing a polymer film on a semiconductor wafer comprising exposing said wafer to ultraviolet radiation during chemical vapor deposition of said film.
Claim 13
Dependent Claim
28 words
The process as in claim 9 wherein the process for depositing a polymer film includes the process for depositing a film of a poly(p-xylylene) or a fluorinated poly(p-xylylene).
Claim 14
Dependent Claim
37 words
The process as in claim 10 wherein the process for depositing a film of a poly(p-xylylene) or a fluorinated poly(p-xylylene) is the process for depositing a film of Parylene AF4, Parylene N, Parylene C, or Parylene D.
Claim 15
Dependent Claim
34 words
The process as in claim 9 wherein the process for depositing a polymer film includes the process for depositing a film of a material selected from the group consisting of Polynaphthalene-N, Polynaphthalene-F, and polytetrafluoroethylene.
Claim 16
Dependent Claim
32 words
A process for depositing a polymer film on a surface of a semiconductor wafer, the process comprising: exposing said surface to ultraviolet radiation; and depositing said polymer film on said exposed surface.
Claim 17
Dependent Claim
32 words
A process for depositing a polymer film on a surface of a semiconductor wafer, the process comprising: exposing said surface to ultraviolet radiation; and depositing said polymer film on said exposed surface.
Claim 18
Dependent Claim
28 words
The process as in claim 13 wherein the process for depositing a polymer film comprises the process for depositing a film of a poly(p-xylylene) or a fluorinated poly(p-xylylene).
Claim 19
Dependent Claim
53 words
A process for depositing a polymer film on a semiconductor wafer, the process comprising: depositing a layer of a low dielectric constant polymer material on said wafer to form a coated wafer; and exposing said coated wafer to ultraviolet radiation while heating said coated wafer, wherein said layer of polymer material is annealed.
Claim 20
Dependent Claim
53 words
A process for depositing a polymer film on a semiconductor wafer, the process comprising: depositing a layer of a low dielectric constant polymer material on said wafer to form a coated wafer; and exposing said coated wafer to ultraviolet radiation while heating said coated wafer, wherein said layer of polymer material is annealed.
Claim 21
Dependent Claim
20 words
The process as in claim 15 wherein the polymer film is a film of a poly(p-xylylene) or a fluorinated poly(p-xylylene).
Claim 22
Dependent Claim
68 words
A process for depositing a polymer film on a semiconductor wafer comprising: depositing a first layer of a low dielectric constant polymer material on said wafer by chemical vapor deposition; exposing said first layer to ultraviolet radiation; depositing a second layer of said low dielectric constant polymer material on said first layer to form said polymer film; and heating said polymer film, wherein said polymer film is annealed.
Claim 23
Dependent Claim
68 words
A process for depositing a polymer film on a semiconductor wafer comprising: depositing a first layer of a low dielectric constant polymer material on said wafer by chemical vapor deposition; exposing said first layer to ultraviolet radiation; depositing a second layer of said low dielectric constant polymer material on said first layer to form said polymer film; and heating said polymer film, wherein said polymer film is annealed.
Claim 24
Dependent Claim
19 words
The process of claim 17 further comprising exposing said polymer film to ultraviolet radiation before heating said polymer film.
Claim 25
Dependent Claim
19 words
The process of claim 17 wherein said low dielectric constant polymer material is a poly(p-xylylene) or a fluorinated poly(p-xylylene).
Claim 26
Dependent Claim
32 words
The process of claim 1 wherein exposing said coated wafer to ultraviolet radiation is exposing said coated wafer to ultraviolet radiation at an intensity of between 100 and 600 mW/cm 2 .
Claim 27
Dependent Claim
30 words
The process of claim 5 wherein exposing said wafer to ultraviolet radiation is exposing said wafer to ultraviolet radiation at an intensity of between 100 and 600 mW/cm 2 .
Claim 28
Dependent Claim
30 words
The process of claim 9 wherein exposing said wafer to ultraviolet radiation is exposing said wafer to ultraviolet radiation at an intensity of between 100 and 600 mW/cm 2 .
Claim 29
Dependent Claim
32 words
The process of claim 15 wherein exposing said coated wafer to ultraviolet radiation is exposing said coated wafer to ultraviolet radiation at an intensity of between 100 and 600 mW/cm 2 .
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