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US5122440A Expired / Lapsed US ⏱️ 0.0 years remaining

Ultraviolet curing of photosensitive polyimides

Assignee: Individual
•
Filing: 1990-05-07
•
Granted: 1992-06-16
•
Expires: 2010-05-07
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Abstract

Abstract Photosensitive polyimides used in microelectronic structures are cross-linked without exposing the associated microelectronic structures to elevated temperatures that can lower the process yield and reduce the reliability of the microelectronic structures. The photosensitive polyimides are cured by exposing them to deep ultraviolet radiation that has a spectral output effective to crosslink the polyimide. The cross-linking hardens the polyimide and renders it insoluble in solvents such as photoresist strippers.

Inventors

  • 👤 Chung-Ping Chien

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 20:43
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70458; G03F7/70466; H; H05; H05K; H05K3/00; H05K3/0073; H05K3/0082; H05K3/46; H05K3/4644

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 96 words
A method for photolithographically patterning a layer comprising a photosensitive polyimide, the method comprising the steps: exposing first portions of the layer to a first dosage of radiation; removing second portions of the layer that were not exposed to the first dosage of radiation; and by contacting the second portions with a developing solvent exposing the first portions remaining after the removing step to a second dosage of ultraviolet radiation, the second dosage of ultraviolet radiation rendering the first portions substantially insoluble in a solvent selected from the group consisting of methylethylketone, acetonitrile, and N-methyl pyrollidone.
Claim 2
Independent Claim 96 words
A method for photolithographically patterning a layer comprising a photosensitive polyimide, the method comprising the steps: exposing first portions of the layer to a first dosage of radiation; removing second portions of the layer that were not exposed to the first dosage of radiation; and by contacting the second portions with a developing solvent exposing the first portions remaining after the removing step to a second dosage of ultraviolet radiation, the second dosage of ultraviolet radiation rendering the first portions substantially insoluble in a solvent selected from the group consisting of methylethylketone, acetonitrile, and N-methyl pyrollidone.
Claim 3
Dependent Claim 20 words
The method of claim 1, wherein the second dosage of ultraviolet radiation is at least about 75 joules/centimeter 2 /micron.
Claim 4
Dependent Claim 20 words
The method of claim 1, wherein the second dosage of ultraviolet radiation is at least about 100 joules/centimeter 2 /micron.
Claim 5
Dependent Claim 19 words
The method of claim 1, wherein the first dosage of radiation has a wavelength ranging above about 300 nanometers.
Claim 6
Dependent Claim 32 words
The method of claim 1, wherein the photosensitive polyimide comprises a polymer represented by the structural unit: ##STR2## wherein R is an aliphatic group and R' is hydrogen or an aliphatic group.
Claim 7
Dependent Claim 128 words
A process for electroplating a conductor seed pattern comprising the steps: providing a layer comprising a photosensitive polyimide over said conductor seed pattern; photolithographically patterning the layer of the photosensitive polyimide by exposing first portions of the layer to a first dosage of radiation and removing the second portions of the layer that were not exposed to the first dosage of radiation by contacting the second portions with a developing solvent; electroplating the conductor seed pattern; and exposing the photolithographically patterned layer of the photosensitive polyimide to a second dosage of ultraviolet radiation, the photolithographically patterned layer of the photosensitive polyimide after being exposed to the second dosage of ultraviolet radiation being substantially insoluble in a solvent selected from the group consisting of methylethylketone, acetonitrile, and N-methyl pyrollidone.
Claim 8
Dependent Claim 128 words
A process for electroplating a conductor seed pattern comprising the steps: providing a layer comprising a photosensitive polyimide over said conductor seed pattern; photolithographically patterning the layer of the photosensitive polyimide by exposing first portions of the layer to a first dosage of radiation and removing the second portions of the layer that were not exposed to the first dosage of radiation by contacting the second portions with a developing solvent; electroplating the conductor seed pattern; and exposing the photolithographically patterned layer of the photosensitive polyimide to a second dosage of ultraviolet radiation, the photolithographically patterned layer of the photosensitive polyimide after being exposed to the second dosage of ultraviolet radiation being substantially insoluble in a solvent selected from the group consisting of methylethylketone, acetonitrile, and N-methyl pyrollidone.
Claim 9
Dependent Claim 21 words
The process of claim 6, wherein the second dosage of ultraviolet radiation has a wavelength ranging between about 200and 280 nanometers.
Claim 10
Dependent Claim 20 words
The process of claim 6, wherein the second dosage of ultraviolet radiation is at least about 75 joules/centimeter 2 /micron.
Claim 11
Dependent Claim 20 words
The process of claim 6, wherein the second dosage of ultraviolet radiation is at least about 100 joules/centimeter 2 /micron.
Claim 12
Dependent Claim 19 words
The process of claim 6, wherein the first dosage of radiation has a wavelength ranging above about 300 nanometers.
Claim 13
Independent Claim 79 words
A method for photolithographically patterning a layer comprising a photosensitive polyimide, the method comprising the steps; exposing first portions of the layer to a first dosage of radiation; removing second portions of the layer that were not exposed to the first dosage of radiation by contacting the second portions with a developing solvent; and exposing the first portions remaining after the removing step to a second dosage of radiation having a wavelength ranging between about 200 to 280 nanometers.
Claim 14
Independent Claim 79 words
A method for photolithographically patterning a layer comprising a photosensitive polyimide, the method comprising the steps; exposing first portions of the layer to a first dosage of radiation; removing second portions of the layer that were not exposed to the first dosage of radiation by contacting the second portions with a developing solvent; and exposing the first portions remaining after the removing step to a second dosage of radiation having a wavelength ranging between about 200 to 280 nanometers.
Claim 15
Dependent Claim 19 words
The method of claim 11, wherein the second dosage of radiation is at least about 75 joules/centimeter 2 /micron.
Claim 16
Dependent Claim 19 words
The method of claim 11, wherein the second dosage of radiation is at least about 100 joules/centimeter 2 /micron.
Claim 17
Dependent Claim 18 words
the method of claim 11, wherein the first dosage of radiation has a wavelength above about 300 nanometers.
Claim 18
Dependent Claim 32 words
The method of claim 11, wherein the photosensitive polyimide comprises a polymer represented by the structural unit: ##STR3## wherein R is an aliphatic group and R' is hydrogen or an aliphatic group.
Claim 19
Dependent Claim 20 words
The process of claim 6, wherein the second dosage of ultraviolet radiation has a wavelength less than about 280 nanometers.
Claim 20
Dependent Claim 20 words
The process of claim 1, wherein the second dosage of ultraviolet radiation has a wavelength less than about 280 nanometers.
Claim 21
Dependent Claim 21 words
The process of claim 1, wherein the second dosage of ultraviolet radiation has a wavelength ranging between 200 and 280 nanometers.

References Cited (Backward Citations)

US4624912A Cited
US4567132A Cited
US4696890A Cited
US4681778A Cited
US4661214A Cited
US4855871A Cited
US4770897A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-06-16 1995-12-16 1996-06-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-06-16 1999-12-16 2000-06-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-06-16 2003-12-16 2004-06-16 $7700.00 Window Closed / Lapsed

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