US5846375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
Assignee: Micron Technology Inc
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Filing: 1996-09-26
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Granted: 1998-12-08
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Expires: 2016-09-26
Abstract
Abstract A temperature control system to selectively control the temperature of specific areas of the chuck or electrode plate upon which a wafer is mounted during plasma etching, chemical vapor deposition and other such temperature dependent processes for the purpose of ultimately controlling the temperature of the semiconductor wafer. The temperature control system includes a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops. Each conduit is connected to its own inlet and outlet to allow a heating or cooling agent to flow independently through each conduit.
Inventors
- 👤 Robin Gilchrist
- 👤 Michael S. Wilhoit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:16
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32715; H01J37/32724; H01J2237/00; H01J2237/20; H01J2237/2001
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
71 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops.
Claim 2
Dependent Claim
71 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops.
Claim 3
Dependent Claim
11 words
A device according to claim 1, wherein the loops are circular.
Claim 4
Dependent Claim
11 words
A device according to claim 1, wherein the loops are elliptical.
Claim 5
Dependent Claim
106 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
Claim 6
Dependent Claim
106 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
Claim 7
Dependent Claim
102 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; e. an inlet port connected to the reaction chamber for introducing materials into the reaction chamber; and f. an exhaust port connected to the reaction chamber for exhausting materials from the chamber.
Claim 8
Dependent Claim
102 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; e. an inlet port connected to the reaction chamber for introducing materials into the reaction chamber; and f. an exhaust port connected to the reaction chamber for exhausting materials from the chamber.
Claim 9
Dependent Claim
96 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a source of a.c. voltage operatively coupled to one of the electrodes for applying an a.c. voltage between the first and second electrodes.
Claim 10
Dependent Claim
96 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a source of a.c. voltage operatively coupled to one of the electrodes for applying an a.c. voltage between the first and second electrodes.
Claim 11
Dependent Claim
103 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of supply mechanisms for supplying a cooling agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.
Claim 12
Dependent Claim
103 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of supply mechanisms for supplying a cooling agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.
Claim 13
Dependent Claim
103 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of supply mechanisms for supplying a heating agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.
Claim 14
Dependent Claim
103 words
A plasma type semiconductor processing device, comprising: a. a reaction chamber; b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing; c. a second electrode disposed opposite the first electrode; and d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and e. a plurality of supply mechanisms for supplying a heating agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.
Claim 15
Dependent Claim
44 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 16
Dependent Claim
44 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 17
Dependent Claim
13 words
A temperature control system according to claim 9, wherein the loops are circular.
Claim 18
Dependent Claim
13 words
A temperature control system according to claim 9, wherein the loops are elliptical.
Claim 19
Dependent Claim
49 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits embedded in the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 20
Dependent Claim
49 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits embedded in the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 21
Dependent Claim
80 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising: a. a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops; and b. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
Claim 22
Dependent Claim
80 words
A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising: a. a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops; and b. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
Claim 23
Dependent Claim
57 words
A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising: a. a generally disc shaped body to which the wafer is mounted during processing; and b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 24
Dependent Claim
57 words
A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising: a. a generally disc shaped body to which the wafer is mounted during processing; and b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.
Claim 25
Dependent Claim
11 words
A chuck according to claim 14, wherein the loops are circular.
Claim 26
Dependent Claim
11 words
A chuck according to claim 14, wherein the loops are elliptical.
Claim 27
Dependent Claim
91 words
A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising: a. a generally disc shaped body to which the wafer is mounted during processing; b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops; and c. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
Claim 28
Dependent Claim
91 words
A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising: a. a generally disc shaped body to which the wafer is mounted during processing; b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops; and c. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-07 | 2002-06-08 | 2002-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-07 | 2006-06-08 | 2006-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-07 | 2010-06-08 | 2010-12-08 | $7700.00 | Window Closed / Lapsed |