Patent US6021582A successfully refreshed from Google Patents.
Patent US6277237B1 successfully refreshed from Google Patents.
US6277237B1
Expired / Lapsed
US
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Chamber liner for semiconductor process chambers
Assignee: Lam Research Corp
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Filing: 2000-11-14
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Granted: 2001-08-21
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Expires: 2020-11-14
Abstract
Abstract A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.
Inventors
- 👤 Alan M. Schoepp
- 👤 William M. Denty, Jr.
- 👤 Michael Barnes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:01
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32458; H01J37/32477; H01J37/32495; Y; Y10; Y10S; Y10S156/00; Y10S156/916
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
131 words
A process chamber for use in semiconductor fabrication, comprising: a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a sermiconductor wafer; and a chamber liner having a plasma confinement shield with a plurality of apertures, the plasma confinement shield having an annular configuration defining an inner circumference and an outer circumference, a cylindrical outer sidewall extending upwardly from the outer circumference of the plasma confinement shield for a first distance, a cylindrical inner sidewall extending upwardly from the inner circumference of the plasma confinement shield for a second distance, the first distance being longer than the second distance, and an outer flange extending outwardly from the outer sidewall, the outer flange extending beyond the chamber and into a space at atmospheric pressure.
Claim 2
Dependent Claim
131 words
A process chamber for use in semiconductor fabrication, comprising: a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a sermiconductor wafer; and a chamber liner having a plasma confinement shield with a plurality of apertures, the plasma confinement shield having an annular configuration defining an inner circumference and an outer circumference, a cylindrical outer sidewall extending upwardly from the outer circumference of the plasma confinement shield for a first distance, a cylindrical inner sidewall extending upwardly from the inner circumference of the plasma confinement shield for a second distance, the first distance being longer than the second distance, and an outer flange extending outwardly from the outer sidewall, the outer flange extending beyond the chamber and into a space at atmospheric pressure.
Claim 3
Dependent Claim
26 words
The process chamber of claim 1 , wherein the plasma confinement shield, the inner and outer sidewalls, and the outer flange are integral with one another.
Claim 4
Dependent Claim
21 words
The process chamber of claim 1 , wherein the inner and outer sidewalls are substantially perpendicular to the plasma confinement shield.
Claim 5
Dependent Claim
32 words
The process chamber of claim 1 , wherein the inner sidewall includes an inner flange that extends inwardly in a direction substantially opposite to the direction in which the outer flange extends.
Claim 6
Dependent Claim
39 words
The process chamber of claim 1 , wherein a first RF gasket is in contact with an tipper surface of the outer flange and a second RF gasket is in contact with a lower surface of the outer flange.
Claim 7
Dependent Claim
45 words
The process chamber of claim 5 , wherein the chamber liner is comprised of anodized aluminum, and the first and second RF gaskets are in contact with areas of the upper and lower surfaces of the outer flange, respectively, that are substantially free of anodization.
Claim 8
Dependent Claim
89 words
A process chamber, comprising: a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer; and a chamber liner having an annular plasma confinement shield with a plurality of apertures, a cylindrical outer sidewall extending upwardly from the plasma confinement shield for a first distance, a cylindrical inner sidewall extending upwardly from the plasma confinement shield for a second distance, the first distance being longer than the second distance, and ail outer flange extending outwardly from the outer sidewall.
Claim 9
Dependent Claim
89 words
A process chamber, comprising: a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer; and a chamber liner having an annular plasma confinement shield with a plurality of apertures, a cylindrical outer sidewall extending upwardly from the plasma confinement shield for a first distance, a cylindrical inner sidewall extending upwardly from the plasma confinement shield for a second distance, the first distance being longer than the second distance, and ail outer flange extending outwardly from the outer sidewall.
Claim 10
Dependent Claim
26 words
The process chamber of claim 7 , wherein the plasma confinement shield, the inner and outer sidewalls, and the outer flange are integral with one another.
Claim 11
Dependent Claim
21 words
The process chamber of claim 7 , wherein the inner and outer sidewalls are substantially perpendicular to the plasma confinement shield.
Claim 12
Dependent Claim
32 words
The process chamber of claim 7 , wherein the inner sidewall includes an inner flange that extends inwardly in a direction substantially opposite to the direction in which the outer flange extends.
Claim 13
Dependent Claim
16 words
The process chamber of claim 7 , wherein the chamber liner is comprised of anodized aluminum.
Claim 14
Dependent Claim
28 words
The process chamber of claim 11 , wherein upper and lower surfaces of the outer flange have portions for contacting RF gaskets that are substantially free of anodization.
References Cited (Backward Citations)
US5851299A
Cited
US5951775A
Cited
US5348587A
Cited
US5976308A
Cited
US5641375A
Cited
US5605637A
Cited
EP0814495A2
Cited
US5964947A
Cited
US5882411A
Cited
US5977519A
Cited
US5900064A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-20 | 2005-02-19 | 2005-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-20 | 2009-02-19 | 2009-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-20 | 2013-02-19 | 2013-08-21 | $7700.00 | Window Closed / Lapsed |