Patent US6267076B1 successfully refreshed from Google Patents.
US6267076B1
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Gas phase planarization process for semiconductor wafers
Assignee: Philips Semiconductors Inc
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Filing: 2000-03-01
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Granted: 2001-07-31
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Expires: 2020-03-01
Abstract
Abstract A gas phase planarization process for semiconductor wafers. The present invention comprises a system and method of dry planarization for a semiconductor wafer. For instance, the present invention includes a system adapted to effectively remove all, or a portion of, a layer of dielectric material of a semiconductor wafer through the application of dry abrasion and dry chemistry. As such, a present invention system flattens out height differences of the dielectric material, since high areas of topography are removed faster than low areas.
Inventors
- 👤 Rao V. Annapragada
- 👤 Calvin T. Gabriel
- 👤 Milind G. Weling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:26
CPC Classifications
B; B24; B24B; B24B7/00; B24B7/20; B24B7/22; B24B7/228; B24D; B24D13/00; B24D13/14; H; H10; H10P; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
96 words
A system for planarizing a surface of a semiconductor wafer, said system comprising: a vacuum chamber wherein a subatmospheric pressure is established; a mechanical abrading machine adapted to abrade a surface of a semiconductor wafer utilizing a dry polishing pad, wherein said dry polishing pad is located within said vacuum chamber; and a gas generator coupled to said vacuum chamber, wherein said gas generator is adapted to generate reactive gas and to provide said reactive gas to said vacuum chamber, wherein said reactive gas is utilized to remove material from said surface of said semiconductor wafer.
Claim 2
Independent Claim
96 words
A system for planarizing a surface of a semiconductor wafer, said system comprising: a vacuum chamber wherein a subatmospheric pressure is established; a mechanical abrading machine adapted to abrade a surface of a semiconductor wafer utilizing a dry polishing pad, wherein said dry polishing pad is located within said vacuum chamber; and a gas generator coupled to said vacuum chamber, wherein said gas generator is adapted to generate reactive gas and to provide said reactive gas to said vacuum chamber, wherein said reactive gas is utilized to remove material from said surface of said semiconductor wafer.
Claim 3
Dependent Claim
29 words
The system as described in claim 1 further comprising: a device coupled to said vacuum chamber, wherein said device is adapted to sample gas species of said vacuum chamber.
Claim 4
Dependent Claim
30 words
The system as described in claim 1 further comprising: a device coupled to said vacuum chamber, wherein said device determines when said mechanical abrading machine stops abrading said semiconductor wafer.
Claim 5
Dependent Claim
16 words
The system as described in claim 3 wherein said device is a quadrupole mass spectrometry device.
Claim 6
Dependent Claim
16 words
The system as described in claim 1 wherein said dry polishing pad includes embedded abrasive particles.
Claim 7
Dependent Claim
16 words
The system as described in claim 1 wherein said dry polishing pad includes non-embedded abrasive particles.
Claim 8
Dependent Claim
31 words
The system as described in claim 5 further comprising: an input device coupled to said vacuum chamber, wherein said input device is adapted to provide gas species to said vacuum chamber.
Claim 9
Dependent Claim
16 words
The system as described in claim 7 wherein said gas species comprises a hydrogen peroxide gas.
Claim 10
Dependent Claim
16 words
The system as described in claim 7 wherein said gas species comprises a polymerizing fluorocarbon gas.
Claim 11
Dependent Claim
21 words
The system as described in claim 7 wherein said gas species comprises a combination of a neutral gas and abrasive particles.
Claim 12
Dependent Claim
21 words
The system as described in claim 1 wherein said gas generator utilizes a fluorine component gas to generate said reactive gas.
Claim 13
Dependent Claim
16 words
The system as described in claim 11 wherein said fluorine component gas comprises NF 3 .
Claim 14
Dependent Claim
16 words
The system as described in claim 11 wherein said fluorine component gas comprises CF 4 .
Claim 15
Dependent Claim
18 words
The system as described in claim 1 wherein said gas generator utilizes microwaves to generate said reactive gas.
Claim 16
Dependent Claim
15 words
The system as described in claim 1 wherein said reactive gas contains fluorine particle species.
Claim 17
Dependent Claim
23 words
The system as described in claim 1 wherein said subatmospheric pressure is equal to a pressure range of about 0.1 to 10 torr.
Claim 18
Independent Claim
132 words
A system for planarizing a surface of a semiconductor wafer, said system comprising: a vacuum chamber wherein a subatmospheric pressure is established; a mechanical abrading machine adapted to abrade a surface of a semiconductor wafer utilizing a dry polishing pad, wherein said dry polishing pad is located within said vacuum chamber; a plasma gas generator coupled to said vacuum chamber, wherein said plasma gas generator is adapted to generate plasma gas and to provide said plasma gas to said vacuum chamber, wherein said plasma gas is utilized to remove material from said surface of said semiconductor wafer in order to planarize said surface of said semiconductor wafer; and a device coupled to said vacuum chamber, wherein said device is adapted to samples gas species of an interior space of said vacuum chamber.
Claim 19
Independent Claim
132 words
A system for planarizing a surface of a semiconductor wafer, said system comprising: a vacuum chamber wherein a subatmospheric pressure is established; a mechanical abrading machine adapted to abrade a surface of a semiconductor wafer utilizing a dry polishing pad, wherein said dry polishing pad is located within said vacuum chamber; a plasma gas generator coupled to said vacuum chamber, wherein said plasma gas generator is adapted to generate plasma gas and to provide said plasma gas to said vacuum chamber, wherein said plasma gas is utilized to remove material from said surface of said semiconductor wafer in order to planarize said surface of said semiconductor wafer; and a device coupled to said vacuum chamber, wherein said device is adapted to samples gas species of an interior space of said vacuum chamber.
Claim 20
Dependent Claim
21 words
The system as described in claim 12 wherein said device determines when said mechanical abrading machine stops abrading said semiconductor water.
Claim 21
Dependent Claim
16 words
The system as described in claim 18 wherein said device is a quadrupole mass spectrometry device.
Claim 22
Dependent Claim
16 words
The system as described in claim 17 wherein said dry polishing pad includes embedded abrasive particles.
Claim 23
Dependent Claim
16 words
The system as described in claim 17 wherein said dry polishing pad includes non-embedded abrasive particles.
Claim 24
Dependent Claim
35 words
The system as described in claim 17 further comprising: an input device coupled to said vacuum chamber, wherein said input device is adapted to provide gas species to said interior space of said vacuum chamber.
Claim 25
Dependent Claim
16 words
The system as described in claim 22 wherein said gas species comprises a hydrogen peroxide gas.
Claim 26
Dependent Claim
16 words
The system as described in claim 22 wherein said gas species comprises a polymerizing fluorocarbon gas.
Claim 27
Dependent Claim
21 words
The system as described in claim 22 wherein said gas species comprises a combination of a neutral gas and abrasive particles.
Claim 28
Dependent Claim
24 words
The system as described in claim 17 wherein said plasma gas generator utilizes microwaves and a fluorine component gas to generate said plasma gas.
Claim 29
Dependent Claim
16 words
The system as described in claim 26 wherein said fluorine component gas comprises NF 3 .
Claim 30
Dependent Claim
15 words
The system as described in claim 26 said fluorine component gas comprises CF 4 .
Claim 31
Dependent Claim
15 words
The system as described in claim 17 wherein said plasma gas contains fluorine particle species.
Claim 32
Dependent Claim
23 words
The system as described in claim 17 wherein said subatmospheric pressure is equal to a pressure range of about 0.1 to 10 torr.
Claim 33
Dependent Claim
20 words
The system as described in claim 1 wherein said gas generator utilize radio frequency energy to generate said reactive gas.
Claim 34
Dependent Claim
26 words
The system as described in claim 17 wherein said plasma gas generator utilizes radio frequency energy and a fluorine component gas to generate said plasma gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-30 | 2005-01-29 | 2005-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-30 | 2009-01-29 | 2009-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-30 | 2013-01-29 | 2013-07-31 | $7700.00 | Window Closed / Lapsed |