US5288333A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer cleaning method and apparatus therefore
Assignee: Dainippon Screen Manufacturing Co Ltd
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Filing: 1992-07-29
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Granted: 1994-02-22
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Expires: 2012-07-29
Abstract
Abstract A wafer cleaning method and apparatus in which a cleaning solution is caused to evaporate at a temperature below its boiling point, and cleaning vapor thus produced is applied at a temperature above its dew point to a wafer such as a semiconductor wafer. The wafer is cleaned without formation of colloidal silica in the absence of aerosol, or etched uniformly free of impurities. The wafer cleaning apparatus comprises a cleaning solution storage, a vapor generating section, a wafer supporting position of a wafer supporting device and a vapor supply section. These components are arranged in a housing to overlap one another in plan view and to lie vertically close to one another. The apparatus has a compact overall construction with simplified seals for preventing leakage of the cleaning vapor.
Inventors
- 👤 Masato Tanaka
- 👤 Hisao Nishizawa
- 👤 Nobuyuki Hirai
- 👤 Kaoru Shinbara
- 👤 Hitoshi Yoshioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:03
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; H10P70/125; B; B08; B08B; B08B7/00; B08B7/0064; B08B7/0092; H10P72/00; H10P72/04; H10P72/0402; H10P72/0404
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
72 words
A method of cleaning a wafer by supplying cleaning vapor to the wafer, comprising the steps of: causing a cleaning solution to evaporate at a temperature below its boiling point to produce said cleaning vapor; and supplying said cleaning vapor to said wafer to clean said wafer at a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor.
Claim 2
Independent Claim
72 words
A method of cleaning a wafer by supplying cleaning vapor to the wafer, comprising the steps of: causing a cleaning solution to evaporate at a temperature below its boiling point to produce said cleaning vapor; and supplying said cleaning vapor to said wafer to clean said wafer at a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor.
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1, wherein said wafer after being cleaned is transferred to a wet cleaning chamber for supplying a further cleaning solution to said wafer.
Claim 4
Dependent Claim
22 words
A method as claimed in claim 1, wherein the cleaning vapor temperature is adjusted to a temperature above the dew point thereof.
Claim 5
Dependent Claim
34 words
A method as claimed in claim 1, wherein the cleaning solution comprises at least one member of the group consisting of H 2 SO 4 , HNO 3 , hydrogen halide, ammonia and choline.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 1, wherein the cleaning solution comprises hydrogen fluoride.
Claim 7
Independent Claim
121 words
A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of: supporting the wafer on a wafer supporting device; storing a cleaning solution in a cleaning solution container; evaporating said cleaning solution in a vapor generating section above said cleaning solution container at a temperature below a boiling point thereof; supplying cleaning vapor in a vapor supply section to said wafer supported by said wafer supporting device at a temperature above a dew point thereof; and arranging said cleaning solution container, said vapor generating section, a wafer supporting position of said wafer supporting device, and said vapor supply section in said apparatus to overlap one another in plan view and to lie vertically close to one another.
Claim 8
Independent Claim
121 words
A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of: supporting the wafer on a wafer supporting device; storing a cleaning solution in a cleaning solution container; evaporating said cleaning solution in a vapor generating section above said cleaning solution container at a temperature below a boiling point thereof; supplying cleaning vapor in a vapor supply section to said wafer supported by said wafer supporting device at a temperature above a dew point thereof; and arranging said cleaning solution container, said vapor generating section, a wafer supporting position of said wafer supporting device, and said vapor supply section in said apparatus to overlap one another in plan view and to lie vertically close to one another.
Claim 9
Dependent Claim
22 words
A method as claimed in claim 6, wherein the cleaning vapor temperature is adjusted to a temperature above the dew point thereof.
Claim 10
Dependent Claim
34 words
A method as claimed in claim 6, wherein the cleaning solution comprises at least one member of the group consisting of H 2 SO 4 , HNO 3 , hydrogen halide, ammonia and choline.
Claim 11
Dependent Claim
14 words
A method as claimed in claim 6, wherein the cleaning solution comprises hydrogen fluoride.
Claim 12
Independent Claim
147 words
A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of: supporting the wafer at a prescribed level in said apparatus; storing a cleaning solution in said apparatus; evaporating said cleaning solution in a vapor generating section above said stored cleaning solution at a temperature below a boiling point thereof, to form a cleaning vapor; and adjusting said cleaning vapor to a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor and supplying said cleaning vapor to said wafer in a vapor supply section; said vapor generating section, said stored cleaning solution, said vapor supply section, and said prescribed level of said wafer being so provided in said apparatus as to overlap one another in plan view and to be positioned vertically adjacent to one another in that order.
Claim 13
Independent Claim
147 words
A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of: supporting the wafer at a prescribed level in said apparatus; storing a cleaning solution in said apparatus; evaporating said cleaning solution in a vapor generating section above said stored cleaning solution at a temperature below a boiling point thereof, to form a cleaning vapor; and adjusting said cleaning vapor to a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor and supplying said cleaning vapor to said wafer in a vapor supply section; said vapor generating section, said stored cleaning solution, said vapor supply section, and said prescribed level of said wafer being so provided in said apparatus as to overlap one another in plan view and to be positioned vertically adjacent to one another in that order.
Claim 14
Dependent Claim
34 words
A method as claimed in claim 10, wherein the cleaning solution comprises at least one member of the group consisting of H 2 SO 4 , HNO 3 , hydrogen halide, ammonia and choline.
Claim 15
Dependent Claim
14 words
A method as claimed in claim 10, wherein the cleaning solution comprises hydrogen fluoride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |