High selectivity Si-rich SiON etch-stop layer

Claim 1

A method for forming a dual damascene interconnect using an Anti-Reflective Coating (ARC) etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; b) forming a first insulating layer overlying the conductive line, c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a RI between about 2.6 and 2.8 measured at 633 nm; said ARC etch stop layer composed of Si Rich SiON having a Si molar percentage between about 58% and 62%; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so tat the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line, said first and said second openings comprise a dual damascene opening; n) remove said second photoresist layer, o) depositing a metal layer so that the metal layer fills said first and second open; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 2

A method for forming a dual damascene interconnect using an Anti-Reflective Coating (ARC) etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; b) forming a first insulating layer overlying the conductive line, c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a RI between about 2.6 and 2.8 measured at 633 nm; said ARC etch stop layer composed of Si Rich SiON having a Si molar percentage between about 58% and 62%; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so tat the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line, said first and said second openings comprise a dual damascene opening; n) remove said second photoresist layer, o) depositing a metal layer so that the metal layer fills said first and second open; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 11

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line; said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (Torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to firm a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening; n) removing said second photoresist layer; o) depositing a metal layer so that the metal layer fills said first and second opening; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 12

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line; said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (Torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to firm a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening; n) removing said second photoresist layer; o) depositing a metal layer so that the metal layer fills said first and second opening; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 15

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line; said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and 1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (Torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils, a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM, at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening, the etching of said second insulating layer is preformed at the following: a Pressure (torr) between 100 and 250 mtorr, a Power (W) between 900 and 1200 W; a CHF 3 flow between 60 and 95 sccm; a CF 4 flow (Sccm) between 5 and 30 sccm, a Ar flow (Sccm) between 100 and 200 sccm Ar, a Magnetic Field between 0 and 50 G; an etch selectivity between Si-rich SiON:oxide between 1:4.2 and 1:5.7; and an Etch selectivity SiON:oxide between 1:1.5 and 1:4; an etch selectivity PE nitride; oxide between 1:1.5 and 1:3; and said second insulating layer is composed of silicon oxide; n) removing said second photoresist layer; o) depositing a metal layer so that the metal layer fills said first and second opening; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 16

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line; said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and 1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (Torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils, a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM, at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer; e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; m) etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening, the etching of said second insulating layer is preformed at the following: a Pressure (torr) between 100 and 250 mtorr, a Power (W) between 900 and 1200 W; a CHF 3 flow between 60 and 95 sccm; a CF 4 flow (Sccm) between 5 and 30 sccm, a Ar flow (Sccm) between 100 and 200 sccm Ar, a Magnetic Field between 0 and 50 G; an etch selectivity between Si-rich SiON:oxide between 1:4.2 and 1:5.7; and an Etch selectivity SiON:oxide between 1:1.5 and 1:4; an etch selectivity PE nitride; oxide between 1:1.5 and 1:3; and said second insulating layer is composed of silicon oxide; n) removing said second photoresist layer; o) depositing a metal layer so that the metal layer fills said first and second opening; and p) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 17

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line, said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and 1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils, a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM, at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer, e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening; the etching of said second insulating layer is preformed at the following: a pressure between 1 and 15 mtorr; a power between 900 and 1500 W, a bias Power (watts) 1000 and 1800 W; a C 2 F 6 flow (sccm) between 7 and 9 sccm; and C 4 F 8 flow between 10 and 20 sccm; an Ar flow between 100 and 200 sccm; and Etch selectivity between Si-rich SiON oxide at about 1:7 and 1:15; an etch selectivity SiON:oxide between 1:1.5 and 1:4; and said second insulating layer is composed of silicon oxide; m) removing said second photoresist layer; n) depositing a metal layer so that the metal layer fills said first and second opening; and o) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.

Claim 18

A method for forming a dual damascene interconnect using an Anti-Reflective Coating etch stop layer composed of Si Rich SiON, the method comprising the steps of: a) forming a conductive line over said substrate; said conductive line is comprised an Al Alloy; b) forming a first insulating layer overlying the conductive line, said first insulating layer has a thickness between 5000 and 10,000 Å; c) forming an ARC etch stop layer composed of Si Rich SiON overlying the first insulating layer; said ARC etch stop layer has a thickness between about 500 and 1000 Å; (1) said ARC etch stop layer is composed of Si-rich SiON having a Si molar percentage between about 58% and 62% formed by the following process: a Pressure (torr) between about 4 and 6 Torr, a power between 100 and 150 Watt; an electrode spacing between 450 and 550 mils, a SiH 4 flow between 70 and 90 SCCM, a N 2 O flow between 30 and 50 SCCM and a He flow between 1900 and 2500 SCCM, at a temperature between 300 and 400° C., and said ARC etch stop layer having a refractive index (RI) between 2.65 and 2.75 measure at 633 nm; d) forming a first photoresist layer overlying said first insulating layer, e) exposing said first photoresist layer to light to molecularly alter a portion of the first photoresist layer wherein the ARC etch stop layer attenuates light reflected from the conductive region so that the light reflected from the conductive region has a reduced effect on the portion of the first photoresist layer which is molecularly altered; said light has a wavelength within the range of 364 nm to 366 nm; f) developing said first photoresist layer to form a first photoresist opening; g) etching said first insulating layer thorough said first photoresist opening forming a first opening; h) removing said first photoresist layer; i) forming a second insulating layer over said ARC etch stop layer and said first insulating layer; said second insulating layer has a thickness between 4000 and 8000 Å; j) forming a second photoresist layer on said second insulating layer; k) exposing said second photoresist layer to light to molecularly alter a portion of the second photoresist layer wherein said ARC etch stop layer attenuates light reflected from said conductive region so that the light reflected from said conductive region has a reduced effect on the portion of the second photoresist layer which is molecularly altered; l) developing said second photoresist layer to form a second photoresist opening; etching said second insulating layer thorough said second photoresist opening forming a second opening and wherein said ARC etch stop layer is used as an etch stop layer; and etching said first insulating layer extending said first opening to expose said conductive line; said first and said second openings comprise a dual damascene opening; the etching of said second insulating layer is preformed at the following: a pressure between 1 and 15 mtorr; a power between 900 and 1500 W, a bias Power (watts) 1000 and 1800 W; a C 2 F 6 flow (sccm) between 7 and 9 sccm; and C 4 F 8 flow between 10 and 20 sccm; an Ar flow between 100 and 200 sccm; and Etch selectivity between Si-rich SiON oxide at about 1:7 and 1:15; an etch selectivity SiON:oxide between 1:1.5 and 1:4; and said second insulating layer is composed of silicon oxide; m) removing said second photoresist layer; n) depositing a metal layer so that the metal layer fills said first and second opening; and o) planarizing said metal layer so that the metal layer forms an electrical interconnect which is electrically coupled to the conductive region.