Patent US6238482B1 successfully refreshed from Google Patents.
US6238482B1
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US
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Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer
Assignee: Intel Corp
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Filing: 1999-02-26
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Granted: 2001-05-29
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Expires: 2019-02-26
Abstract
Abstract A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with the epitaxial film on the first semiconductor film. The epitaxial film is debonded from the EPI wafer. The epitaxial film is bonded to the first semiconductor film.
Inventors
- 👤 Brian S. Doyle
- 👤 Kramadhati V. Ravi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:06
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/18; C30B33/00; H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
57 words
A method of making a wafer, the method comprising: forming a first semiconductor film onto a semiconductor substrate; forming an epitaxial film on an epitaxial wafer; placing said epitaxial wafer with said epitaxial film on said first semiconductor film; debonding said epitaxial film from said epitaxial wafer; and bonding said epitaxial film to said first semiconductor film.
Claim 2
Independent Claim
57 words
A method of making a wafer, the method comprising: forming a first semiconductor film onto a semiconductor substrate; forming an epitaxial film on an epitaxial wafer; placing said epitaxial wafer with said epitaxial film on said first semiconductor film; debonding said epitaxial film from said epitaxial wafer; and bonding said epitaxial film to said first semiconductor film.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said first semiconductor film is formed onto said semiconductor substrate by chemical vapor deposition.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said epitaxial film is embrittled.
Claim 5
Dependent Claim
18 words
The method of claim 3 wherein said epitaxial film is formed by implanting ions into the epitaxial wafer.
Claim 6
Dependent Claim
11 words
The method of claim 4 wherein said ions include Hydrogen ions.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein said Hydrogen ions have a concentration in a range of approximately 5×10 16 -10 17 /cm 2 .
Claim 8
Dependent Claim
30 words
The method of claim 1 wherein said debonding includes heating said semiconductor substrate with said epitaxial film placed onto said first semiconductor film to a temperature of approximately 400° C.
Claim 9
Dependent Claim
24 words
The method of claim 1 wherein said bonding includes heating said semiconductor substrate with said epitaxial film to a temperature of approximately 800° C.
Claim 10
Dependent Claim
53 words
The method of claim 1 wherein a combined thickness of the first semiconductor film and of said epitaxial film has a size such that a junction capacitance of a Metal Oxide Semiconductor Field Effect Transistor (MOFSET) formed onto the epitaxial film extends no further than said epitaxial film and said first semiconductor film.
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein said first semiconductor film has a thickness of approximately 2 micrometers.
Claim 12
Dependent Claim
16 words
The method of claim 1 wherein said epitaxial film has a thickness of approximately 1 micrometer.
Claim 13
Dependent Claim
12 words
The method of claim 1 wherein said first semiconductor film includes polysilicon.
Claim 14
Dependent Claim
14 words
The method of claim 1 , said first semiconductor film includes an amorphous material.
Claim 15
Independent Claim
89 words
A method of making an active device, the method comprising: forming a first semiconductor film onto a heavily doped semiconductor substrate; forming an epitaxial film onto an epitaxial wafer; placing said epitaxial wafer with said epitaxial film onto said first semiconductor film; debonding said epitaxial film from said epitaxial wafer; bonding said epitaxial film to said first semiconductor film; forming first and second active areas, separated by a space therebetween, into said epitaxial film; and forming a gate electrode onto said epitaxial film, said gate electrode overlying said space.
Claim 16
Independent Claim
89 words
A method of making an active device, the method comprising: forming a first semiconductor film onto a heavily doped semiconductor substrate; forming an epitaxial film onto an epitaxial wafer; placing said epitaxial wafer with said epitaxial film onto said first semiconductor film; debonding said epitaxial film from said epitaxial wafer; bonding said epitaxial film to said first semiconductor film; forming first and second active areas, separated by a space therebetween, into said epitaxial film; and forming a gate electrode onto said epitaxial film, said gate electrode overlying said space.
Claim 17
Dependent Claim
11 words
The method of claim 14 wherein said epitaxial film is embrittled.
Claim 18
Dependent Claim
18 words
The method of claim 15 wherein said epitaxial film is formed by implanting ions into the epitaxial wafer.
Claim 19
Dependent Claim
53 words
The method of claim 14 wherein a combined thickness of the first semiconductor film and of said epitaxial film has a size such that a junction capacitance of a Metal Oxide Semiconductor Field Effect Transistor (MOFSET) formed onto the epitaxial film extends no further than said epitaxial film and said first semiconductor film.
Claim 20
Dependent Claim
17 words
The method of claim 14 , said first semiconductor film has a thickness of approximately 2 micrometers.
Claim 21
Dependent Claim
16 words
The method of claim 14 , said epitaxial film has a thickness of approximately 1 micrometer.
Claim 22
Dependent Claim
70 words
A wafer comprising: a semiconductor substrate having a first film formed on said semiconductor substrate; and an epitaxial film bonded to said first film wherein a combined thickness of said first film and of said epitaxial film has a size such that a junction capacitance of a Metal Oxide Semiconductor Field Effect Transistor (MOFSET) formed onto said epitaxial film extends no further than said epitaxial film and said first film.
Claim 23
Dependent Claim
70 words
A wafer comprising: a semiconductor substrate having a first film formed on said semiconductor substrate; and an epitaxial film bonded to said first film wherein a combined thickness of said first film and of said epitaxial film has a size such that a junction capacitance of a Metal Oxide Semiconductor Field Effect Transistor (MOFSET) formed onto said epitaxial film extends no further than said epitaxial film and said first film.
Claim 24
Dependent Claim
14 words
The wafer of claim 20 wherein said combined thickness is larger than 1 micrometer.
Claim 25
Dependent Claim
11 words
The wafer of claim 20 wherein said first film include polysilicon.
Claim 26
Dependent Claim
13 words
The wafer of claim 22 wherein said first film includes an amorphous material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |