US4837182A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing sheets of crystalline material
Assignee: Massachusetts Institute of Technology
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Filing: 1987-12-04
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Granted: 1989-06-06
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Expires: 2007-12-04
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Inventors
- 👤 Carl O. Bozler
- 👤 John C. C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:22
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10F19/00; H10F19/40; H10F71/00; H10F71/121; H10F71/127; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; H10P72/00; H10P72/70; H10P72/74; H10P72/7412; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S117/903; Y10S117/904; Y10S117/905; Y10S117/915; Y10S148/00; Y10S148/026; Y10S148/048; Y10S148/054; Y10S148/09; Y10S148/135; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
A method of producing a sheet of crystalline material over a substrate, comprising: a. forming a mask of the substrate to expose single crystal areas on or in the substrate; b. depositing crystallizable material over said substrate and mask; c. scanning with a localized heat source to provide sufficient energy to the crystallizable material to cause lateral epitaxial crystal growth thereof; and d. continuing lateral overgrowth until a sheet of crystalline material having desired dimensions has formed.
Claim 2
Independent Claim
77 words
A method of producing a sheet of crystalline material over a substrate, comprising: a. forming a mask of the substrate to expose single crystal areas on or in the substrate; b. depositing crystallizable material over said substrate and mask; c. scanning with a localized heat source to provide sufficient energy to the crystallizable material to cause lateral epitaxial crystal growth thereof; and d. continuing lateral overgrowth until a sheet of crystalline material having desired dimensions has formed.
Claim 3
Dependent Claim
31 words
A method of claim 1 including the additional steps of separating the sheet of crystalline material from the substrate and optionally reusing the substrate to produce additional sheets of crystalline material.
Claim 4
Dependent Claim
17 words
A method according to claim 1 wherein the localized heat source is comprised of a graphite heater.
Claim 5
Dependent Claim
26 words
A method according to claim 1 wherein said heat source is comprised of a scanned or pulsed laser or electron beam to cause said lateral growth.
Claim 6
Dependent Claim
43 words
A method according to claim 1 wherein the substrate having the crystallizable material thereon is heated to a temperature close to the melting point of the crystallizable material prior to applying sufficient energy to the crystallizable material to cause lateral epitaxial crystal growth.
Claim 7
Dependent Claim
22 words
A method according to claim 1 including an additional step of fabricating a device in or from the sheet of crystalline material.
Claim 8
Dependent Claim
32 words
A method according to claim 1 wherein the crystalline material is deposited in the presence of selected impurity dopants to form layers of different conductivity type in the sheet of crystalline material.
Claim 9
Dependent Claim
41 words
A method according to claim 2 wherein plural sheets of crystalline material are formed and are bonded together by an electrically insulating or electrically conducting layer to form a device in which the sheets are electrically decouples or electrically connected, respectively.
Claim 10
Dependent Claim
20 words
A method according to claim 1 wherein said heat source provides energy along a beam having a large aspect ratio.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |