US6208019B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ultra-thin card-type semiconductor device having an embredded semiconductor element in a space provided therein
Assignee: Kioxia Corp
•
Filing: 1999-03-10
•
Granted: 2001-03-27
•
Expires: 2019-03-10
Abstract
Abstract A card-type semiconductor device including a thin (e.g., 30 to 70 μm) semiconductor chip which is thinner than an insulating resin film embedded in a device hole of a wiring film. The wiring film includes a copper wiring layer and inner leads arranged on one main face of the insulating resin film. Electrode pads are bonded to the inner leads by heating and pressing. A sealing resin layer is formed on the exterior of the bonded portion as required, and a polyester resin film is integrally laminated on the upper and lower faces of the wiring film. The card-type semiconductor device with the above construction has sufficient strength against bending, etc., and is suitable for integrated circuit (IC) card applications.
Inventors
- 👤 Yasuo Tane
- 👤 Kazuyasu Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:26
CPC Classifications
G; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G06K19/077; G06K19/0772; G06K19/07728; G06K19/07745; H; H10; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W74/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
171 words
A semiconductor device, comprising: a film insulating substrate having a device hole; a wiring layer formed on at least one main face of the insulating substrate and a group of leads whose one end is connected to the wiring layer and the other end is protruded into the device hole; a semiconductor element which has a thickness smaller than the insulating substrate with its each electrode pad electrically connected to respective leading ends of the group of leads, the semiconductor element being fully embedded into the device hole of the insulating substrate; exterior layers which are laminated on both faces of the insulating substrate; and an insulating resin layer sealing the connected portions between the electrode pads of the semiconductor element and the leads, wherein the insulating resin layer is formed in such a manner that at least a part of a side surface of the semiconductor element is covered, and a first air portion is formed between the insulating resin layer and the insulating substrate in the device hole thereof.
Claim 2
Dependent Claim
171 words
A semiconductor device, comprising: a film insulating substrate having a device hole; a wiring layer formed on at least one main face of the insulating substrate and a group of leads whose one end is connected to the wiring layer and the other end is protruded into the device hole; a semiconductor element which has a thickness smaller than the insulating substrate with its each electrode pad electrically connected to respective leading ends of the group of leads, the semiconductor element being fully embedded into the device hole of the insulating substrate; exterior layers which are laminated on both faces of the insulating substrate; and an insulating resin layer sealing the connected portions between the electrode pads of the semiconductor element and the leads, wherein the insulating resin layer is formed in such a manner that at least a part of a side surface of the semiconductor element is covered, and a first air portion is formed between the insulating resin layer and the insulating substrate in the device hole thereof.
Claim 3
Dependent Claim
20 words
The semiconductor device according to claim 1 , wherein the semiconductor element has a thickness of 30 to 70 μm.
Claim 4
Dependent Claim
28 words
The semiconductor device according to claim 1 , wherein the semiconductor element is not fixed to but free from the exterior layer and disposed within the device hole.
Claim 5
Dependent Claim
18 words
The semiconductor device according to claim 1 , wherein the film insulating substrate is a polyimide resin film.
Claim 6
Dependent Claim
21 words
The semiconductor device according to claim 1 , wherein at least one of the exterior layers is a polyester resin film.
Claim 7
Dependent Claim
41 words
The semiconductor device according to claim 1 , wherein a second air portion is formed between one of the exterior layers and the insulating resin layer and disposed in the device hole on an electrode pad-formed surface of the semiconductor element.
Claim 8
Dependent Claim
35 words
The semiconductor device according to claim 1 , wherein the leading ends of the leads are coated with a gold, tin or solder layer, which is bonded with the electrode pads of the semiconductor element.
Claim 9
Dependent Claim
29 words
The semiconductor device according to claim 1 , wherein each leading end of the leads has a width smaller than that of the electrode pads of the semiconductor element.
Claim 10
Dependent Claim
24 words
The semiconductor device according to claim 1 , wherein the electrode pads of the semiconductor element are bonded with the leads through gold bumps.
Claim 11
Dependent Claim
25 words
The semiconductor device according to claim 9 , wherein each leading end of the leads has a width smaller than that of the gold bumps.
Claim 12
Dependent Claim
73 words
A semiconductor device comprising: a semiconductor element having a thickness of 30 to 70 μm and a flexible bending radius of 15 to 40 mm: and an enclosure portion made of an insulating resin for fully covering the periphery of the semiconductor element, wherein the enclosure portion has a bending radius of less than 15 mm, and the semiconductor device as a whole has a flexible bending radius of 15 to 40 mm.
Claim 13
Dependent Claim
73 words
A semiconductor device comprising: a semiconductor element having a thickness of 30 to 70 μm and a flexible bending radius of 15 to 40 mm: and an enclosure portion made of an insulating resin for fully covering the periphery of the semiconductor element, wherein the enclosure portion has a bending radius of less than 15 mm, and the semiconductor device as a whole has a flexible bending radius of 15 to 40 mm.
Claim 14
Dependent Claim
34 words
The semiconductor device according to claim 11 , wherein the enclosure portion comprises a film insulating substrate having a device hole and exterior layers which are laminated on both faces of the insulating substrate.
Claim 15
Dependent Claim
28 words
The semiconductor device according to claim 12 , wherein the semiconductor element is not fixed to but free from the exterior layers and disposed within the device hole.
Claim 16
Dependent Claim
18 words
The semiconductor device according to claim 12 , wherein the film insulating substrate is a polyimide resin film.
Claim 17
Dependent Claim
21 words
The semiconductor device according to claim 12 , wherein at least one of the exterior layers is a polyester resin film.
Claim 18
Dependent Claim
67 words
The semiconductor device according to claim 12 , wherein the insulating resin layer sealing the connected portions between electrode pads of the semiconductor element and leads are formed in such a manner that at least a part of a side surface of the semiconductor element is covered, and an air portion is formed between the insulating resin layer and the insulating substrate in the device hole thereof.
References Cited (Backward Citations)
US3702464A
Cited
US4474292A
Cited
US4380699A
Cited
US4709254A
Cited
US4460825A
Cited
US4409471A
Cited
US4447716A
Cited
US4731645A
Cited
US4649418A
Cited
US5013900A
Cited
US4843225A
Cited
US4792843A
Cited
US4725924A
Cited
US4931853A
Cited
US4910582A
Cited
US5048179A
Cited
US4907061A
Cited
US5067008A
Cited
US5327010A
Cited
US5280192A
Cited
US5264990A
Cited
US5272374A
Cited
US5612403A
Cited
US5741392A
Cited
US5399847A
Cited
US5324687A
Cited
US5736781A
Cited
US5673179A
Cited
US5682295A
Cited
US5480842A
Cited
US5917705A
Cited
US5880934A
Cited
US5822191A
Cited
US5737191A
Cited
US5773775A
Cited
US5851854A
Cited
US5777381A
Cited
US5856913A
Cited
US5822190A
Cited
US5773884A
Cited
US5786988A
Cited
US6027958A
Cited
US5877550A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |