US5856913A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multilayer semiconductor device having high packing density
Assignee: Semikron GmbH and Co KG
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Filing: 1997-04-21
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Granted: 1999-01-05
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Expires: 2017-04-21
Abstract
Abstract A semiconductor power module has semiconductor components mounted on a substrate. The semiconductor components are in electrical contact with the substrate. Internal circuit wiring is achieved by using one or more flexible circuit boards. The flexible circuit board(s) contact the semiconductor components and also provide external connection elements. Hermetical encapsulation is achieved by lamination, and height equalization of the different circuit regions is achieved by using geometrically preformed prepregs in conjunction with the flexible circuit board and the substrate.
Inventors
- 👤 Heinrich Heilbronner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:57
CPC Classifications
H; H10; H10W; H10W72/00; H10W70/00; H10W70/099; H10W70/60; H10W70/611; H10W70/67; H10W70/688; H10W74/00; H10W74/10; H10W74/131; H10W74/144; H10W90/00; H10W72/30; H10W72/50; H10W72/551; H10W72/552; H10W72/5524
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
123 words
A semiconductor power module, comprising: an electrically isolating substrate; a layer of electrically conducting material on each of two opposing surfaces of said substrate; at least one semiconductor component, having a first face and a second face; said first face of said semiconductor component being in electrical contact and thermal contact with one of said layers of electrically conducting material; said second face of said semiconductor component being in electrical contact with a flexible circuit board at a contact point; and at least one structured intermediate isolation layer, having at least one opening effective to allow said semiconductor element to electrically contact said flexible circuit board at said contact point, wherein said isolation layer is between said substrate and said flexible circuit board.
Claim 2
Dependent Claim
123 words
A semiconductor power module, comprising: an electrically isolating substrate; a layer of electrically conducting material on each of two opposing surfaces of said substrate; at least one semiconductor component, having a first face and a second face; said first face of said semiconductor component being in electrical contact and thermal contact with one of said layers of electrically conducting material; said second face of said semiconductor component being in electrical contact with a flexible circuit board at a contact point; and at least one structured intermediate isolation layer, having at least one opening effective to allow said semiconductor element to electrically contact said flexible circuit board at said contact point, wherein said isolation layer is between said substrate and said flexible circuit board.
Claim 3
Dependent Claim
27 words
A semiconductor power module according to claim 1, wherein said semiconductor element is at least one of a diode, a bipolar transistor, a MOSFET or an IGBT.
Claim 4
Dependent Claim
37 words
A semiconductor power module according to claim 2, wherein said semiconductor element is coated on each of said first face and said second face with a unilaterally structured coating for one of pressure contact or solder contact.
Claim 5
Dependent Claim
27 words
A semiconductor power module according to claim 2, wherein said second face of said semiconductor component is in electrical contact with said flexible circuit board through soldering.
Claim 6
Dependent Claim
28 words
A semiconductor power module according to claim 2, wherein said second face of said semiconductor component is in electrical contact with said flexible circuit board through pressure contact.
Claim 7
Dependent Claim
41 words
A semiconductor power module according to claim 1, wherein said flexible circuit board includes at least one structured conducting strip, said conducting strip being coated on all sides with insulating lamination having openings for electrical contact points of said conducting strip.
Claim 8
Dependent Claim
37 words
A semiconductor power module according to claim 1, wherein said structured intermediate isolation layer comprises a laminate of a glass fabric and epoxy resin, said laminate being coated on all sides with a layer of epoxy resin.
Claim 9
Dependent Claim
48 words
A semiconductor power module according to claim 1, wherein said structured intermediate isolation layer is of a thickness such that it is coplanar with said second face of said semiconductor element when said structured intermediate isolation layer is in place between said substrate and said flexible circuit board.
Claim 10
Dependent Claim
33 words
A semiconductor power module according to claim 1, wherein said flexible circuit board includes a cover film effective to, along with said substrate, provide mechanical and electrical isolation of said semiconductor power module.
Claim 11
Dependent Claim
30 words
A semiconductor power module according to claim 1, wherein said structured intermediate isolation layer, in conjunction with said flexible circuit board, is effective to hermetically seal said semiconductor power module.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-04 | 2002-07-06 | 2003-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-04 | 2006-07-06 | 2007-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-04 | 2010-07-06 | 2011-01-05 | $7700.00 | Window Closed / Lapsed |