← Back to Patent Explorer
US6201696B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Package for semiconductor power device and method for assembling the same

Assignee: Toshiba Corp
•
Filing: 1998-12-08
•
Granted: 2001-03-13
•
Expires: 2018-12-08
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A package for a semiconductor power device which comprises: a conductive bottom plate as a heat sink; an insulating substrate mounted on the bottom plate; a copper film formed on the insulating substrate to expose a peripheral region of the insulating substrate; semiconductor chips disposed on the copper film; a container arranged on the bottom plate, surrounding the insulating substrate; an external terminal supported through the container and connected electrically with the semiconductor chips; and a silicone gel filled within the container, wherein a solidified insulating material is disposed on an outer edge region of the copper film and the peripheral region of the insulating substrate. Thus, reducing an electric field across the interface and making it difficult to cause a creeping discharge. A notch is formed in the bottom plate, and the notch is filled with a high heat conductive resin. The notch is located outwardly apart from a region where the semiconductor chips are mounted. Thus, a creeping breakdown is prevented without sacrificing a heat radiation effect of the bottom plate. Using a waterproof and flexible film to seal an inlet for filling the silicone gel into the case, a heat stress caused by an expansion and a shrinkage of the silicone gel in response to a variation of temperatures is reduced, and it prevents the silicone gel from being wet. A thermoplastic insulating resin is employed instead of the silicone gel.

Inventors

  • 👤 Toshio Shimizu
  • 👤 Hiroyuki Hiramoto
  • 👤 Hiroki Sekiya
  • 👤 Kenji Kigima

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 13:20
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W72/00; H10W72/50; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/121; H10W76/00; H10W76/40; H10W76/42; H10W76/47; H10W72/531; H10W72/533; H10W72/534; H10W72/5363; H10W72/5366; H10W72/541; H10W72/547; H10W72/5475; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W90/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 96 words
A package for a semiconductor power device, comprising: a conductive bottom plate serving as a heat sink; an insulating substrate mounted on said bottom plate; a conductive film formed on said insulating substrate selectively to expose a peripheral region of said insulating substrate; a semiconductor power chip mounted on said conductive film; a solidified insulating material disposed on an outer edge region of said conductive film and said peripheral region of said insulating substrate so as to suppress a creeping discharge around the outer edge region; and an insulating material formed on said semiconductor power chip.
Claim 2
Dependent Claim 96 words
A package for a semiconductor power device, comprising: a conductive bottom plate serving as a heat sink; an insulating substrate mounted on said bottom plate; a conductive film formed on said insulating substrate selectively to expose a peripheral region of said insulating substrate; a semiconductor power chip mounted on said conductive film; a solidified insulating material disposed on an outer edge region of said conductive film and said peripheral region of said insulating substrate so as to suppress a creeping discharge around the outer edge region; and an insulating material formed on said semiconductor power chip.
Claim 3
Dependent Claim 22 words
The package of claim 1 , wherein a height of said solidified insulating material exceeds a thickness of said semiconductor power chip.
Claim 4
Dependent Claim 42 words
The package of claim 1 , wherein said solidified insulating material comprising: an adhesive material formed on said outer edge region of said conductive film and said peripheral region of said insulating substrate; and a heaping member adhered by said adhesive material.
Claim 5
Dependent Claim 14 words
The package of claim 1 , wherein said insulating substrate is a ceramic substrate.
Claim 6
Dependent Claim 18 words
The package of claim 1 , wherein said insulating material formed on said semiconductor is a silicon gel.
Claim 7
Dependent Claim 29 words
The package of claim 5 , wherein said solidified insulating material comprises a hardened resin, the hardened resin having a higher breakdown voltage than that of the silicon gel.
Claim 8
Dependent Claim 19 words
The package of claim 1 , wherein said solidified insulating material comprises an epoxy resin or a polyester resin.
Claim 9
Dependent Claim 36 words
The package of claim 1 , wherein said solidified insulating material comprises a hardened resin, the resin includes powdered ceramics so as to relax electric field strength around said outer edge region of said conductive film.
Claim 10
Dependent Claim 29 words
The package of claim 1 , wherein said solidified insulating material is disposed on the outer edge region so as to expose a shoulder of the outer edge region.
Claim 11
Dependent Claim 22 words
The package of claim 1 , further comprising a bottom conductive film sandwiched between said insulating substrate and said conductive bottom plate.
Claim 12
Dependent Claim 25 words
The package of claim 1 , further comprising a control circuitry chip mounted on said conductive film, and configured to control said semiconductor power chip.
Claim 13
Dependent Claim 66 words
The package of claim 1 , further comprising: a container body connected to said bottom plate, surrounding said insulating substrate; an upper lid disposed at an upper portion of said container body; and an external terminal supported through said upper lid, connected electrically to the semiconductor power chip, wherein said insulating material is filled within the container body so as to cover said semiconductor power chip.

References Cited (Backward Citations)

US4814943A Cited
US5081562A Cited
US5386342A Cited
US5398160A Cited
EP0727818A1 Cited
EP0661748A1 Cited
EP0789397A2 Cited
US5940271A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-03-12 2004-09-11 2005-03-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-03-12 2008-09-11 2009-03-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-03-12 2012-09-11 2013-03-13 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag