US6201292B1
Expired / Lapsed
US
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Resin-sealed semiconductor device, circuit member used therefor
Assignee: Dai Nippon Printing Co Ltd
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Filing: 1998-04-01
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Granted: 2001-03-13
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Expires: 2018-04-01
Abstract
Abstract There is disclosed a resin-sealed semiconductor device in which plural terminal portions each integrally having an inner terminal on a surface and an outer terminal on a rear face are arranged two-dimensionally substantially in a plane electrically independent of one another. A die pad is electrically independently disposed in a substantially middle portion in the plane where the terminal portions are arranged two-dimensionally. A semiconductor element is mounted on the die pad. The inner terminals of the terminal portions are electrically connected via wires to terminals of the semiconductor element, and the entirety is sealed with a resin in such a manner that the outer terminals of the terminal portions are partially exposed to the outside. Therefore, an occupancy ratio of the semiconductor element in the semiconductor device is increased. The semiconductor device can be miniaturized. The mounting density onto a circuit substrate can be enhanced. Also, by forming outer electrodes on the outer terminals, different from the conventional TSOP or another small-sized semiconductor device, multiple pins can be easily provided.
Inventors
- 👤 Hiroshi Yagi
- 👤 Yoichi Hitomi
- 👤 Makoto Nakamura
- 👤 Masato Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:09
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/421; H10W70/424; H10W70/01; H10W70/04; H10W70/042; H10W70/411; H10W70/415; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7438; H10W72/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07353; H10W72/075; H10W72/07511; H10W72/30; H10W72/331; H10W72/334; H10W72/50; H10W72/541; H10W72/5434; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W74/00; H10W74/10; H10W74/111; H10W74/127; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
100 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a die pad fixed to said semiconductor element, electrically independent from said terminals, and having a top surface in said plane; and a resin configured to completely seal said semiconductor element and said die pad, wherein each of said terminals comprises at least one portion embedded in said resin, and further comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 2
Dependent Claim
100 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a die pad fixed to said semiconductor element, electrically independent from said terminals, and having a top surface in said plane; and a resin configured to completely seal said semiconductor element and said die pad, wherein each of said terminals comprises at least one portion embedded in said resin, and further comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1 , further comprising an outer electrode formed on said bottom surface of each of said terminals, wherein said outer electrode comprises solder.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1 , wherein said die pad and said terminals comprise a copper-base alloy.
Claim 5
Dependent Claim
34 words
A semiconductor device according to claim 3 , wherein said die pad and said terminals further comprise a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 4 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 7
Dependent Claim
47 words
A semiconductor device according to claim 5 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 8
Dependent Claim
19 words
A semiconductor device according to claim 1 , wherein said die pad and said terminals comprise an iron-base alloy.
Claim 9
Dependent Claim
26 words
A semiconductor device according to claim 7 , wherein said die pad and said terminals further comprise a palladium plating layer formed on said iron-base alloy.
Claim 10
Dependent Claim
16 words
A semiconductor device according to claim 8 , wherein said iron-base alloy has a roughed surface.
Claim 11
Dependent Claim
27 words
A semiconductor device according to claim 9 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
Claim 12
Dependent Claim
117 words
A semiconductor device, comprising: a semiconductor element having a top surface defining a plane; a plurality of terminals aligned with each other; a plating layer formed on each of said terminals, electrically connected to said semiconductor element, and leveled with said plane defined by said top surface of said semiconductor element; a die pad fixed to said semiconductor element and electrically independent from said terminals; and a resin configured to embed said semiconductor element, at least one portion of said die pad, and at least one portion of each of said terminals, wherein each of said terminals comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 13
Dependent Claim
117 words
A semiconductor device, comprising: a semiconductor element having a top surface defining a plane; a plurality of terminals aligned with each other; a plating layer formed on each of said terminals, electrically connected to said semiconductor element, and leveled with said plane defined by said top surface of said semiconductor element; a die pad fixed to said semiconductor element and electrically independent from said terminals; and a resin configured to embed said semiconductor element, at least one portion of said die pad, and at least one portion of each of said terminals, wherein each of said terminals comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 14
Dependent Claim
23 words
A semiconductor device according to claim 11 , wherein said die pad comprises an unsealed portion exposed to the outside of said resin.
Claim 15
Dependent Claim
29 words
A semiconductor device according to claim 11 , further comprising an outer electrode formed on said bottom surface of each of said terminals, wherein said outer electrode comprises solder.
Claim 16
Dependent Claim
19 words
A semiconductor device according to claim 11 , wherein said die pad and said terminals comprise a copper-base alloy.
Claim 17
Dependent Claim
34 words
A semiconductor device according to claim 14 , wherein said die pad and said terminals further comprise a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 18
Dependent Claim
25 words
A semiconductor device according to claim 15 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 19
Dependent Claim
47 words
A semiconductor device according to claim 16 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 20
Dependent Claim
19 words
A semiconductor device according to claim 11 , wherein said die pad and said terminals comprise an iron-base alloy.
Claim 21
Dependent Claim
26 words
A semiconductor device according to claim 18 , wherein said die pad and said terminals further comprise a palladium plating layer formed on said iron-base alloy.
Claim 22
Dependent Claim
16 words
A semiconductor device according to claim 19 , wherein said iron-base alloy has a roughed surface.
Claim 23
Dependent Claim
27 words
A semiconductor device according to claim 20 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
Claim 24
Dependent Claim
132 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a die pad fixed to said semiconductor element, electrically independent from said terminals, and having top surface in said plane; and a resin configured to embed said semiconductor element, at least one portion of said die pad, and at least one portion of each of said terminals, wherein said die pad has a uniform thickness and further comprises a bottom surface completely exposed to the outside of said resin and flush with an outer surface of said resin, and each of said terminals comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 25
Dependent Claim
132 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a die pad fixed to said semiconductor element, electrically independent from said terminals, and having top surface in said plane; and a resin configured to embed said semiconductor element, at least one portion of said die pad, and at least one portion of each of said terminals, wherein said die pad has a uniform thickness and further comprises a bottom surface completely exposed to the outside of said resin and flush with an outer surface of said resin, and each of said terminals comprises a bottom surface flush with an outer surface of said resin and exposed to the outside of said resin.
Claim 26
Dependent Claim
29 words
A semiconductor device according to claim 22 , further comprising an outer electrode formed on said bottom surface of each of said terminals, wherein said outer electrode comprises solder.
Claim 27
Dependent Claim
19 words
A semiconductor device according to claim 22 , wherein said die pad and said terminals comprise a copper-base alloy.
Claim 28
Dependent Claim
34 words
A semiconductor device according to claim 24 , wherein said die pad and said terminals further comprise a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 29
Dependent Claim
25 words
A semiconductor device according to claim 25 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 30
Dependent Claim
47 words
A semiconductor device according to claim 26 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 31
Dependent Claim
19 words
A semiconductor device according to claim 22 , wherein said die pad and said terminals comprise an iron-base alloy.
Claim 32
Dependent Claim
26 words
A semiconductor device according to claim 28 , wherein said die pad and said terminals further comprise a palladium plating layer formed on said iron-base alloy.
Claim 33
Dependent Claim
16 words
A semiconductor device according to claim 29 , wherein said iron-base alloy has a roughed surface.
Claim 34
Dependent Claim
27 words
A semiconductor device according to claim 30 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
Claim 35
Dependent Claim
102 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a plurality of leads integrally interconnected to said terminals, fixed to said semiconductor element, and arranged electrically independent of one another; and a resin configured to completely seat said semiconductor element and said leads, and to embed at least one portion of each of said terminals, wherein each of said leads comprises a top surface leveled with said plane defined by said top surfaces of said terminals, and is thinner than said terminals.
Claim 36
Dependent Claim
102 words
A semiconductor device, comprising: a semiconductor element; a plurality of terminals aligned with each other, electrically connected to said semiconductor element, and having a top surface defining a plane; a plurality of leads integrally interconnected to said terminals, fixed to said semiconductor element, and arranged electrically independent of one another; and a resin configured to completely seat said semiconductor element and said leads, and to embed at least one portion of each of said terminals, wherein each of said leads comprises a top surface leveled with said plane defined by said top surfaces of said terminals, and is thinner than said terminals.
Claim 37
Dependent Claim
29 words
A semiconductor device according to claim 32 , further comprising an outer electrode formed on said bottom surface of each of said terminals, wherein said outer electrode comprises solder.
Claim 38
Dependent Claim
18 words
A semiconductor device according to claim 32 , wherein said leads and said terminals comprise a copper-base alloy.
Claim 39
Dependent Claim
33 words
A semiconductor device according to claim 34 , wherein said leads and said terminals further comprise a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 40
Dependent Claim
25 words
A semiconductor device according to claim 35 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 41
Dependent Claim
47 words
A semiconductor device according to claim 36 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 42
Dependent Claim
18 words
A semiconductor device according to claim 32 , wherein said leads and said terminals comprise an iron-base alloy.
Claim 43
Dependent Claim
25 words
A semiconductor device according to claim 38 , wherein said leads and said terminals further comprise a palladium plating layer formed on said iron-base alloy.
Claim 44
Dependent Claim
16 words
A semiconductor device according to claim 39 , wherein said iron-base alloy has a roughed surface.
Claim 45
Dependent Claim
27 words
A semiconductor device according to claim 40 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
Claim 46
Dependent Claim
63 words
A circuit member for a resin-sealed semiconductor device, comprising: an outer frame member; a plurality of terminals independently connected via connection leads to said outer frame member; and a die pad connected via connection leads to said outer frame member, wherein each of said terminals comprises a top surface defining a plane and each of said connection leads is thinner than said terminals.
Claim 47
Dependent Claim
63 words
A circuit member for a resin-sealed semiconductor device, comprising: an outer frame member; a plurality of terminals independently connected via connection leads to said outer frame member; and a die pad connected via connection leads to said outer frame member, wherein each of said terminals comprises a top surface defining a plane and each of said connection leads is thinner than said terminals.
Claim 48
Dependent Claim
34 words
A circuit member according to claim 42 , wherein said die pad is thinner than said terminals and comprises a top surface leveled with said plane defined by said top surface of said terminals.
Claim 49
Dependent Claim
28 words
A circuit member according to claim 42 , wherein said die pad comprises a top surface leveled with said plane defined by said top surface of said terminals.
Claim 50
Dependent Claim
34 words
A circuit member according to claim 42 , wherein said die pad is thinner than said terminals and comprises a bottom surface leveled with a plane defined by a bottom surface of said terminals.
Claim 51
Dependent Claim
16 words
A circuit member according to claim 42 , wherein said circuit member comprise a copper-base alloy.
Claim 52
Dependent Claim
31 words
A circuit mender according to claim 46 , wherein said circuit member further comprises a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 53
Dependent Claim
25 words
A circuit member according to claim 47 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 54
Dependent Claim
47 words
A circuit member according to claim 48 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 55
Dependent Claim
16 words
A circuit member according to claim 42 , wherein said circuit member comprises an iron-base alloy.
Claim 56
Dependent Claim
23 words
A circuit member according to claim 50 , wherein said circuit member further comprises a palladium plating layer formed on said iron-base alloy.
Claim 57
Dependent Claim
16 words
A circuit member according to claim 51 , wherein said iron-base alloy has a roughed surface.
Claim 58
Dependent Claim
27 words
A circuit member according to claim 52 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
Claim 59
Dependent Claim
77 words
A circuit member for a resin-sealed semiconductor device, comprising: an outer frame member; a plurality of terminals independently connected via connection leads to said outer frame member; and a lead integrally interconnected to each of said terminals, wherein each of said terminals comprises a top surface defining a plane, each of said leads comprises a top surface leveled with said plane, and each of said connection leads and each of said leads are thinner than said terminals.
Claim 60
Dependent Claim
77 words
A circuit member for a resin-sealed semiconductor device, comprising: an outer frame member; a plurality of terminals independently connected via connection leads to said outer frame member; and a lead integrally interconnected to each of said terminals, wherein each of said terminals comprises a top surface defining a plane, each of said leads comprises a top surface leveled with said plane, and each of said connection leads and each of said leads are thinner than said terminals.
Claim 61
Dependent Claim
16 words
A circuit member according to claim 54 , wherein said circuit member comprises a copper-base alloy.
Claim 62
Dependent Claim
31 words
A circuit member according to claim 55 , wherein said circuit member further comprises a lamination of a nickel plating layer and a palladium plating layer laminated on said copper-base alloy.
Claim 63
Dependent Claim
25 words
A circuit member according to claim 56 , wherein said copper-base alloy has a roughed surface and said nickel plating layer has a roughed surface.
Claim 64
Dependent Claim
47 words
A circuit member according to claim 57 , wherein said roughed surface of said copper-base alloy has a center line average roughness of 0.1 μm or more and said roughed surface of said nickel plating layer has a center line average roughness of 0.045 μm or more.
Claim 65
Dependent Claim
16 words
A circuit member according to claim 54 , wherein said circuit member comprises an iron-base alloy.
Claim 66
Dependent Claim
23 words
A circuit member according to claim 59 , wherein said circuit member further comprises a palladium plating layer formed on said iron-base alloy.
Claim 67
Dependent Claim
16 words
A circuit member according to claim 60 , wherein said iron-base alloy has a roughed surface.
Claim 68
Dependent Claim
27 words
A circuit member according to claim 61 , wherein said roughed surface of said iron-base alloy has a center line average roughness of 0.1 μm or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-12 | 2004-09-11 | 2005-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-12 | 2008-09-11 | 2009-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-12 | 2012-09-11 | 2013-03-13 | $7700.00 | Window Closed / Lapsed |