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US6187650B1
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Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layer
Assignee: Siemens AG
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Filing: 1999-11-05
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Granted: 2001-02-13
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Expires: 2019-11-05
Abstract
Abstract A method of forming a planar silicon nitride layer is disclosed. The method comprises: forming a pad oxide layer; forming a first nitride layer on the pad oxide layer; forming a stop layer on the first nitride layer; forming a second nitride layer on the stop layer; performing intermediate processes that damage the second nitride layer; removing the second nitride layer; removing the stop layer such that the first nitride layer remains as the planar silicon nitride layer.
Inventors
- 👤 Joseph Wu
- 👤 Sheng-Fen Chiu
- 👤 J. S. Shiao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:30
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
78 words
A method of forming a planar silicon nitride layer on a substrate, said method comprising: forming a first nitride layer on said substrate; forming a stop layer on said first nitride layer, said stop layer having a thickness of about 150 angstroms; forming a second nitride layer on said stop layer; performing intermediate processes that damage said second nitride layer; removing said second nitride layer using said stop layer as an etching stop; and removing said stop layer.
Claim 2
Independent Claim
78 words
A method of forming a planar silicon nitride layer on a substrate, said method comprising: forming a first nitride layer on said substrate; forming a stop layer on said first nitride layer, said stop layer having a thickness of about 150 angstroms; forming a second nitride layer on said stop layer; performing intermediate processes that damage said second nitride layer; removing said second nitride layer using said stop layer as an etching stop; and removing said stop layer.
Claim 3
Dependent Claim
25 words
The method of claim 1 further comprising the step of forming a pad oxide layer on said substrate and underneath said first silicon nitride layer.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said planar silicon nitride layer is used for forming a trench in said substrate.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said stop layer is formed from an oxide.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein said first and second nitride layers are Si 3 N 4 or BN.
Claim 7
Dependent Claim
19 words
The method of claim 4 , wherein said stop layer is formed by chemical vapor deposition of said oxide.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-13 | 2004-08-14 | 2005-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-13 | 2008-08-14 | 2009-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-13 | 2012-08-14 | 2013-02-13 | $7700.00 | Window Closed / Lapsed |