US6184115B1
Expired / Lapsed
US
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Method of fabricating self-aligned silicide
Assignee: United Microelectronics Corp
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Filing: 1999-02-16
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Granted: 2001-02-06
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Expires: 2019-02-16
Abstract
Abstract The present invention is directed towards a method of fabricating a self-aligned silicide on gate electrode and source/drain region of a semiconductor device. A semiconductor substrate having gate oxide layer and polysilicon layer is provided. Next, a first silicide layer is formed on polysilicon layer. The substrate is patterned and then, etched to form a gate structure. A spacer is formed on the sidewall of the gate structure and source/drain region is formed adjacent thereto. A metal layer is covered on the surface of the substrate. The substrate is performed a thermal process to convert the portion of the metal layer on gate structure and source/drain region into self-aligned silicide.
Inventors
- 👤 Hung-Yu Kou
- 👤 Chih-Ching Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/0213; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
128 words
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of: providing a semiconductor substrate having a gate oxide layer and a polysilicon layer; forming a first metal layer and a first passivation layer in sequence on the polysilicon layer; performing a primary thermal process to convert the first metal layer into a first silicide layer; defining the substrate to form a gate structure; forming a spacer on a sidewall of the gate structure; forming a second metal layer and a second passivation layer in sequence on the surface of the substrate; performing a first thermal process to convert a portion of the second metal layer on the gate structure and on source/drain regions into self-aligned silicide.
Claim 2
Independent Claim
128 words
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of: providing a semiconductor substrate having a gate oxide layer and a polysilicon layer; forming a first metal layer and a first passivation layer in sequence on the polysilicon layer; performing a primary thermal process to convert the first metal layer into a first silicide layer; defining the substrate to form a gate structure; forming a spacer on a sidewall of the gate structure; forming a second metal layer and a second passivation layer in sequence on the surface of the substrate; performing a first thermal process to convert a portion of the second metal layer on the gate structure and on source/drain regions into self-aligned silicide.
Claim 3
Dependent Claim
20 words
The method as claimed in claim 1 , wherein the first metal layer is formed by DC Magnetron Sputtering process.
Claim 4
Dependent Claim
31 words
The method as claimed in claim 1 , wherein the material for the first passivation layer is selected form the group consisting of silicon oxide, silicon nitride and the combination thereof.
Claim 5
Dependent Claim
18 words
The method as claimed in claim 1 , wherein the primary thermal process is a rapid thermal process.
Claim 6
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the primary thermal process is conducted at a temperature of about 600° C. to 650° C.
Claim 7
Dependent Claim
29 words
The method as claimed in claim 1 , further comprising a step of removing the first passivation layer from the gate structure after the formation of the gate structure.
Claim 8
Dependent Claim
20 words
The method as claimed in claim 1 , wherein the second metal layer is formed by DC Magnetron Sputtering process.
Claim 9
Dependent Claim
18 words
The method as claimed in claim 1 , wherein material for the second passivation layer is silicon nitride.
Claim 10
Dependent Claim
18 words
The method as claimed in claim 1 , wherein the first thermal process is a rapid thermal process.
Claim 11
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the first thermal process is conducted at a temperature of about 600° C. to 650° C.
Claim 12
Dependent Claim
28 words
The method as claimed in claim 1 further comprising the steps of removing the second passivation layer and remaining second metal layer; and performing a second thermal process.
Claim 13
Dependent Claim
18 words
The method as claimed in claim 11 , wherein the second thermal process is a rapid thermal process.
Claim 14
Dependent Claim
25 words
The method as claimed in claim 12 , wherein the second thermal process is conducted at a temperature of about 700° C. to 750° C.
Claim 15
Independent Claim
95 words
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of providing a semiconductor substrate having a gate oxide layer and a polysilicon layer; forming a silicide layer on the polysilicon layer; defining the substrate to form a gate structure; forming a spacer on a sidewall of the gate structure; forming a metal layer on the surface of the substrate; performing a first thermal process to convert a portion of the metal layer on the gate structure and on source/drain regions into self-aligned silicide.
Claim 16
Independent Claim
95 words
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of providing a semiconductor substrate having a gate oxide layer and a polysilicon layer; forming a silicide layer on the polysilicon layer; defining the substrate to form a gate structure; forming a spacer on a sidewall of the gate structure; forming a metal layer on the surface of the substrate; performing a first thermal process to convert a portion of the metal layer on the gate structure and on source/drain regions into self-aligned silicide.
Claim 17
Dependent Claim
44 words
The method as claimed in claim 14 , wherein the step of forming a silicide layer comprises the steps of forming a first metal layer on polysilicon layer; and performing a primary thermal process to convert the first metal layer into the silicide layer.
Claim 18
Dependent Claim
19 words
The method as claimed in claim 15 , the first metal layer is formed by DC Magnetron Sputtering process.
Claim 19
Dependent Claim
18 words
The method as claimed in claim 15 , wherein the primary thermal process is a rapid thermal process.
Claim 20
Dependent Claim
25 words
The method as claimed in claim 15 , wherein the primary thermal process is conducted at a temperature of about 600° C. to 650° C.
Claim 21
Dependent Claim
20 words
The method as claimed in claim 14 , wherein the first metal layer is formed by DC Magnetron Sputtering process.
Claim 22
Dependent Claim
18 words
The method as claimed in claim 14 , wherein the first thermal process is a rapid thermal process.
Claim 23
Dependent Claim
25 words
The method as claimed in claim 14 , wherein the first thermal process is conducted at a temperature of about 600° C. to 650° C.
Claim 24
Dependent Claim
24 words
The method as claimed in claim 14 further comprising the steps of removing the remaining second metal layer; and performing a second thermal process.
Claim 25
Dependent Claim
18 words
The method as claimed in claim 22 , wherein the second thermal process is a rapid thermal process.
Claim 26
Dependent Claim
25 words
The method as claimed in claim 22 , wherein the second thermal process is conducted at a temperature of about 700° C. to 750° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |