US6184061B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrode of semiconductor device, method of manufacturing thereof, and the semicondutor device
Assignee: Mitsubishi Electric Corp
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Filing: 1998-10-06
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Granted: 2001-02-06
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Expires: 2018-10-06
Abstract
Abstract An electrode of a semiconductor device comprising: a pad; an electroless diffusion prevention film formed on a surface of the pad for preventing material of the pad from diffusing; a solder precoat film formed on a surface of the electroless diffusion prevention film, and having a thickness not larger than a predetermined value, for preventing a solder bump on the solder precoat film from defective breaking; and a predetermined intermetallic compound layer formed in the solder precoat film in the vicinity of a boundary surface between the solder precoat film and the electroless diffusion prevention film, the intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of the electroless diffusion prevention film.
Inventors
- 👤 Qiang Wu
- 👤 Yoshihiro Tomita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:18
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H05K3/24; H05K3/244; H10; H10W; H10W70/00; H10W70/099; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/241; H10W72/242; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
102 words
A method of manufacturing an electrode of a semiconductor device comprising the steps of: forming a pad on a substrate surface; forming an electroless barrier metal film, as a pad protection film, on said pad; and forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film.
Claim 2
Independent Claim
102 words
A method of manufacturing an electrode of a semiconductor device comprising the steps of: forming a pad on a substrate surface; forming an electroless barrier metal film, as a pad protection film, on said pad; and forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film.
Claim 3
Dependent Claim
30 words
The method of manufacturing an electrode of a semiconductor device as claimed in claim 1 , further comprising the step of: forming a solder bump on the solder precoat layer.
Claim 4
Dependent Claim
40 words
The method of manufacturing an electrode of a semiconductor device according to claim 2 , wherein said step of forming a solder precoat layer is a step of forming a Pb—Sn alloy containing lead not less than 37 wt %.
Claim 5
Dependent Claim
40 words
The method of manufacturing an electrode of a semiconductor device according to claim 2 , wherein said step of forming a solder precoat layer is a step of forming a Pb—Sn alloy containing lead not less than 50 wt %.
Claim 6
Dependent Claim
24 words
The method of manufacturing an electrode of a semiconductor device according to claim 2 , wherein said solder bump is a spherical solder ball.
Claim 7
Dependent Claim
18 words
The method according to claim 2 , wherein the intermetallic compound layer is formed in the solder bump.
Claim 8
Dependent Claim
24 words
The method of manufacturing an electrode of a semiconductor device according to claim 1 , wherein said thickness is not larger than 15 μm.
Claim 9
Dependent Claim
30 words
The method of manufacturing an electrode of a semiconductor device according to claim 1 , wherein said electroless barrier metal film is formed as a pad material diffusion prevention film.
Claim 10
Dependent Claim
33 words
The method of manufacturing an electrode of a semiconductor device according to claim 1 , wherein said step of forming a solder precoat layer is a step of coating by a printing method.
Claim 11
Dependent Claim
33 words
The method of manufacturing an electrode of a semiconductor device according to claim 1 , wherein said step of forming a solder precoat layer is a step of plating by electroless plating method.
Claim 12
Dependent Claim
12 words
The method according to claim 1 , wherein the pad comprises copper.
Claim 13
Independent Claim
164 words
A method of manufacturing an electrode of a semiconductor device comprising the steps of: forming a pad having an upper surface and side surfaces on a substrate surface; forming a passivation film on the substrate and on the side surfaces and portions of the upper surface of the pad, leaving an exposed portion of the upper surface of the pad; forming an electroless barrier metal film, as a pad protection film, on said exposed upper surface of the pad, the barrier metal film having side surfaces abutting the passivation film on the upper surface of the pad; and forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film.
Claim 14
Independent Claim
164 words
A method of manufacturing an electrode of a semiconductor device comprising the steps of: forming a pad having an upper surface and side surfaces on a substrate surface; forming a passivation film on the substrate and on the side surfaces and portions of the upper surface of the pad, leaving an exposed portion of the upper surface of the pad; forming an electroless barrier metal film, as a pad protection film, on said exposed upper surface of the pad, the barrier metal film having side surfaces abutting the passivation film on the upper surface of the pad; and forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film.
Claim 15
Dependent Claim
23 words
The method according to claim 12 , comprising forming the electroless barrier metal film directly on the exposed upper surface of the pad.
Claim 16
Dependent Claim
12 words
The method according to claim 12 , wherein the pad comprises copper.
Claim 17
Dependent Claim
28 words
The method according to claim 12 , comprising forming a solder bump on the solder precoat layer, wherein the intermetallic compound layer is formed within the solder bump.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |