US6184053B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making microelectronic spring contact elements
Assignee: FormFactor Inc
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Filing: 1997-05-06
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Granted: 2001-02-06
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Expires: 2017-05-06
Abstract
Abstract Spring contact elements are fabricated by depositing at least one layer of metallic material into openings defined in masking layers deposited on a surface of a substrate which may be an electronic component such as an active semiconductor device. Each spring contact element has a base end, a contact end, and a central body portion. The contact end is offset in the z-axis (at a different height) and in at least one of the x and y directions from the base end. In this manner, a plurality of spring contact elements are fabricated in a prescribed spatial relationship with one another on the substrate. The spring contact elements make temporary (i.e., pressure) or permanent (e.g., joined by soldering or brazing or with a conductive adhesive) connections with terminals of another electronic component to effect electrical connections therebetween. In an exemplary application, the spring contact elements are disposed on a semiconductor devices resident on a semiconductor wafer so that temporary connections can be made with the semiconductor devices to burn-in and/or test the semiconductor devices.
Inventors
- 👤 Benjamin N. Eldridge
- 👤 Igor Y. Khandros
- 👤 Gaetan L. Mathieu
- 👤 David V. Pedersen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:04
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/40; H05K3/4092; H10; H10W; H10W70/00; H10W70/099; H10W90/00; H10W90/701; G; G01; G01R; G01R1/00; G01R1/02; G01R1/06; G01R1/067; G01R1/06711; G01R1/06716; G01R1/06727; G01R3/00; H05K2201/00; H05K2201/03; H05K2201/0302; H05K2201/0311; H05K2201/0332; H05K2201/0335; H05K2201/0347; H10W72/00; H10W72/01; H10W72/012; H10W72/01215; H10W72/01231; H10W72/01233; H10W72/01235; H10W72/01251; H10W72/01255; H10W72/01261; H10W72/0198; H10W72/20; H10W72/221; H10W72/222; H10W72/223; H10W72/231; H10W72/232; H10W72/234; H10W72/241; H10W72/242; H10W72/245; H10W72/251; H10W72/252; H10W72/255
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
196 words
A method of fabricating spring contact elements on a substrate, comprising: applying at least one layer of masking material on a surface of a substrate and patterning the masking layer to have openings extending from areas on the substrate to positions which are above the surface of the substrate and which also are laterally and/or transversely offset from the areas; depositing a first conductive material, the conductive material comprising a metallic material into the openings, delimiting defined areas of the first conductive material, selectively depositing a second conductive material substantially over the defined areas of the first conductive material, depositing the second conductive material in sufficient thickness to impart useful resilience to a free standing contact element, and removing the masking material so that the remaining second conductive material and the first conductive material forms free-standing contact elements extending from the surface of the substrate, each contact element having a base end which is secured to a one of the areas of the substrate and having a free-standing end and delimiting the defined areas so that for each free-standing contact element, the base end has a larger cross-section than the free-standing end of the contact element.
Claim 2
Independent Claim
196 words
A method of fabricating spring contact elements on a substrate, comprising: applying at least one layer of masking material on a surface of a substrate and patterning the masking layer to have openings extending from areas on the substrate to positions which are above the surface of the substrate and which also are laterally and/or transversely offset from the areas; depositing a first conductive material, the conductive material comprising a metallic material into the openings, delimiting defined areas of the first conductive material, selectively depositing a second conductive material substantially over the defined areas of the first conductive material, depositing the second conductive material in sufficient thickness to impart useful resilience to a free standing contact element, and removing the masking material so that the remaining second conductive material and the first conductive material forms free-standing contact elements extending from the surface of the substrate, each contact element having a base end which is secured to a one of the areas of the substrate and having a free-standing end and delimiting the defined areas so that for each free-standing contact element, the base end has a larger cross-section than the free-standing end of the contact element.
Claim 3
Dependent Claim
13 words
Method, according to claim 1 , wherein: the substrate is an electronic component.
Claim 4
Dependent Claim
13 words
Method, according to claim 1 , wherein: the substrate is a semiconductor device.
Claim 5
Dependent Claim
13 words
Method, according to claim 1 , wherein: the substrate is a semiconductor wafer.
Claim 6
Independent Claim
199 words
A method of making a resilient contact structure, the method comprising providing an electronic component with a surface and a terminal near the surface, depositing a first masking layer on the electronic component with an opening near the terminal, depositing a first conductive layer of conductive material (a) over at least a portion of the terminal to form a first region of the first conductive layer and (b) over at least a portion of the first masking layer to form a second region of the first conductive layer, connecting the first region and second region with a third region of the first conductive layer, depositing a second masking layer with an opening in the second masking layer that overlaps at least in part the opening in the first masking layer, delimiting a defined area of the first conductive layer, the defined area including at least a portion of the opening near the terminal, and later selectively depositing a second conductive material substantially over the defined area of the first conductive layer, depositing the second conductive material in sufficient thickness to impart useful resilience to a resilient contact element, to form a resilient contact structure electrically connected to the terminal.
Claim 7
Independent Claim
199 words
A method of making a resilient contact structure, the method comprising providing an electronic component with a surface and a terminal near the surface, depositing a first masking layer on the electronic component with an opening near the terminal, depositing a first conductive layer of conductive material (a) over at least a portion of the terminal to form a first region of the first conductive layer and (b) over at least a portion of the first masking layer to form a second region of the first conductive layer, connecting the first region and second region with a third region of the first conductive layer, depositing a second masking layer with an opening in the second masking layer that overlaps at least in part the opening in the first masking layer, delimiting a defined area of the first conductive layer, the defined area including at least a portion of the opening near the terminal, and later selectively depositing a second conductive material substantially over the defined area of the first conductive layer, depositing the second conductive material in sufficient thickness to impart useful resilience to a resilient contact element, to form a resilient contact structure electrically connected to the terminal.
Claim 8
Dependent Claim
55 words
The method of claim 5 further comprising: before depositing the first masking layer, depositing an initial conductive layer of conductive material over at least a portion of the electronic component and over at least a portion of the terminal, then depositing the first masking layer over at least a portion of the initial conductive layer.
Claim 9
Dependent Claim
19 words
The method of claim 5 further comprising removing the first masking layer to free the resulting resilient contact structure.
Claim 10
Dependent Claim
27 words
The method of claim 5 wherein the second region of the first conductive layer is approximately parallel to and displaced from the surface of the electronic component.
Claim 11
Dependent Claim
40 words
The method of claim 5 wherein the opening in the first masking layer includes an area on the surface of the electronic component, which may include some or all of the terminal, sufficient to secure the ultimate resilient contact structure.
Claim 12
Dependent Claim
14 words
The method of claim 5 wherein the first masking layer comprises a photoresist material.
Claim 13
Dependent Claim
17 words
The method of claim 5 wherein the first conductive layer has a thickness of about 450 nanometers.
Claim 14
Dependent Claim
17 words
The method of claim 5 wherein the first conductive layer comprises an alloy of titanium and tungsten.
Claim 15
Dependent Claim
23 words
The method of claim 5 wherein the seed layer comprises an alloy of titanium and tungsten with a thickness of about 450 nanometers.
Claim 16
Dependent Claim
30 words
The method of claim 5 wherein the first conductive layer is deposited by a process selected from the group consisting of sputtering, chemical vapor deposition, physical deposition, and e-beam deposition.
Claim 17
Dependent Claim
15 words
The method of claim 5 wherein the first conductive layer is deposited by electrolytic plating.
Claim 18
Dependent Claim
59 words
The method of claim 5 wherein the first conductive layer is deposited by a process selected from the group consisting of electrolytic plating, electroless plating, chemical vapor deposition, physical vapor deposition, a process involving the deposition of material out of aqueous solution, and a process causing the deposition of material through induced disintegration of a precursor, liquid or solid.
Claim 19
Dependent Claim
11 words
The method of claim 5 wherein the resilient material comprises nickel.
Claim 20
Dependent Claim
41 words
The method of claim 5 wherein the resilient material comprises a material selected from the group consisting of nickel, copper, cobalt, iron, gold, silver, elements of the platinum group, noble metals, semi-noble metals, elements of the palladium group, tungsten, and molybdenum.
Claim 21
Dependent Claim
13 words
The method of claim 5 wherein the electronic component is a semiconductor device.
Claim 22
Dependent Claim
21 words
The method of claim 5 wherein the electronic component is a semiconductor device which has not been singulated from a wafer.
Claim 23
Dependent Claim
43 words
The method of claim 5 wherein the electronic component is selected from the group consisting of a semiconductor device, a memory device, a portion of a semiconductor wafer, a space transformer, a ceramic device, a probe card, a chip carrier and a socket.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |