Patent US6180501B1 successfully refreshed from Google Patents.
US6180501B1
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Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process
Assignee: National University of Singapore
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Filing: 1999-10-14
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Granted: 2001-01-30
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Expires: 2019-10-14
Abstract
Abstract This invention relates to the fabrication of integrated circuit devices and more particularly to a method for minimizing the localized mechanical stress problems that can occur when silicided polysilicon gates are used to fabricate narrow channel CMOS devices. The invention addresses the avoidance of typical stress-induced problems in polysilicon gates, such as non-uniform silicide (including bowing, thinning edges, etc.) and voids, which are becoming increasingly worse as gate lengths continue to be reduced. The key to this invention is to spread the highly detrimental mechanical stresses, in narrow silicided gates, over a larger vertical surface area. This is accomplished by using a thin/thick double polysilicon stack for the gate, whereby, the lower thin polysilicon gate layer is not silicided and the upper thick polysilicon layer is subsequently silicided. An insulating layer is used to prevent silicidation of the lower thin polysilicon gate, during silicidation of active source-drain regions. The same insulating layer is also used to avoid another cause of mechanical stress, by protecting the surface grain boundaries of the lower thin polysilicon gate layer from being stuffed with polymer during the dry etching used for spacer formation. The tall stacked gate structure allows the silicide-induced stresses to be more safely located farther away from the active devices.
Inventors
- 👤 Kin-Leong Pey
- 👤 Chaw Sing Ho
- 👤 Lap Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D64/017
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
117 words
A method for avoiding polysilicon gate processing-induced mechanical stress problems associated with the fabrication of narrow channel self-aligned-silicided (salicided) CMOS FET devices, comprising the steps of: a) forming a first insulating layer to protect surface of a first polysilicon gate, formed over a semiconductor substrate, during an anisotropic etching step for forming side wall spacers; b) using said first insulating layer to selectively prevent the formation of a silicide layer on the surface of said first polysilicon gate, while still forming a first silicide layer on active source-drain regions; c) forming a second polysilicon gate on top of said first polysilicon gate; and d) forming a second silicide layer on a surface of said second polysilicon gate.
Claim 2
Independent Claim
117 words
A method for avoiding polysilicon gate processing-induced mechanical stress problems associated with the fabrication of narrow channel self-aligned-silicided (salicided) CMOS FET devices, comprising the steps of: a) forming a first insulating layer to protect surface of a first polysilicon gate, formed over a semiconductor substrate, during an anisotropic etching step for forming side wall spacers; b) using said first insulating layer to selectively prevent the formation of a silicide layer on the surface of said first polysilicon gate, while still forming a first silicide layer on active source-drain regions; c) forming a second polysilicon gate on top of said first polysilicon gate; and d) forming a second silicide layer on a surface of said second polysilicon gate.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the thickness of said first insulating layer is between about 450 to 550 angstroms.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein the thickness of said first polysilicon gate is between about 1400 to 2500 angstroms.
Claim 5
Dependent Claim
36 words
The method of claim 1 wherein the thickness of said second polysilicon gate is between about 2000 to 3000 angstroms before a step of CMP and about 1000 to 1500 angstroms after a step of CMP.
Claim 6
Dependent Claim
28 words
The method of claim 1 , wherein said anisotropic etching step for forming sidewall spacers is performed with a dry plasma process, such as RIE, Reactive Ion Etching.
Claim 7
Dependent Claim
16 words
The method of claim 1 , wherein said second silicide layer is comprised of titanium silicide.
Claim 8
Dependent Claim
228 words
A fabrication method for minimizing mechanical stress in narrow channel self-aligned-silicided FET devices, comprising the steps of: a) depositing a first insulating layer over a first blanket polysilicon layer, formed over a semiconductor substrate, whereby said first insulating layer will temporarily remain after the first blanket polysilicon layer is etched to form first polysilicon gates; b) forming a second insulating layer over the substrate and etching said second insulating layer to form spacers on side walls of said first polysilicon gates, while said first insulating layer remains on the top surface of said first polysilicon gates; c) forming a first silicide layer on a surface of active source-drain regions, while using said first insulating layer to prevent silicide formation on the surface of said first polysilicon gates; d) depositing a second blanket polysilicon layer over said first polysilicon gates, to be subsequently planarized and used to form second polysilicon gates over said first polysilicon gates; e) etching the second blanket polysilicon layer for said second polysilicon gates and then forming a second silicide layer on said second polysilicon gates; f) depositing and planarizing a third insulating layer to be used as an inter-level dielectric. g) etching said interlevel dielectric to form first contact holes, down to the surface of said active source-drain regions and said second silicide layer; and h) forming contact studs in said first contact holes.
Claim 9
Dependent Claim
228 words
A fabrication method for minimizing mechanical stress in narrow channel self-aligned-silicided FET devices, comprising the steps of: a) depositing a first insulating layer over a first blanket polysilicon layer, formed over a semiconductor substrate, whereby said first insulating layer will temporarily remain after the first blanket polysilicon layer is etched to form first polysilicon gates; b) forming a second insulating layer over the substrate and etching said second insulating layer to form spacers on side walls of said first polysilicon gates, while said first insulating layer remains on the top surface of said first polysilicon gates; c) forming a first silicide layer on a surface of active source-drain regions, while using said first insulating layer to prevent silicide formation on the surface of said first polysilicon gates; d) depositing a second blanket polysilicon layer over said first polysilicon gates, to be subsequently planarized and used to form second polysilicon gates over said first polysilicon gates; e) etching the second blanket polysilicon layer for said second polysilicon gates and then forming a second silicide layer on said second polysilicon gates; f) depositing and planarizing a third insulating layer to be used as an inter-level dielectric. g) etching said interlevel dielectric to form first contact holes, down to the surface of said active source-drain regions and said second silicide layer; and h) forming contact studs in said first contact holes.
Claim 10
Dependent Claim
19 words
The method of claim 7 , wherein said first insulating layer and said spacers are comprised of silicon nitride.
Claim 11
Dependent Claim
33 words
The method of claim 7 , wherein refractory metals are used for forming said first and second silicide layers are comprised of materials selected from group consisting of Titanium, Molybdenum, Tantalum and Tungsten.
Claim 12
Dependent Claim
28 words
The method of claim 7 , wherein said third insulating layer is a doped oxide layer formed by processes such as: LPCVD TEOS or SABPSG, Sub-Atmospheric BoroPhophosilicate Glass.
Claim 13
Dependent Claim
19 words
The method of claim 7 , wherein said second polysilicon gate is formed from either polysilicon or amorphous silicon.
Claim 14
Dependent Claim
22 words
The method of claim 7 , wherein said inter-level dielectric is an oxide layer formed by a typical process such as LPCVD.
Claim 15
Dependent Claim
17 words
The method of claim 7 , wherein planarizing said third insulating layer uses Chemical Mechanical Polishing, CMP.
Claim 16
Dependent Claim
27 words
The method of claim 7 , wherein the thickness of said first polysilicon gates are controlled at a relatively thin value of about 1400 to 2500 angstroms.
Claim 17
Dependent Claim
29 words
The method of claim 7 , wherein said second polysilicon gates are either in a shape of a relatively high stud, a relatively shallow stud or a T-shaped stud.
Claim 18
Dependent Claim
28 words
The method of claim 7 , wherein the first and second silicide layers are formed by a two stage RTP anneal with an intervening selective chemical etch back.
Claim 19
Dependent Claim
40 words
The method of claim 15 , wherein said relatively shallow stud shape is formed by using a pre-patterned underlying dielectric layer as a polish stopper, during the planarization of the associated second blanket polysilicon layer, by means of Chemical-Mechanical-Polishing, CMP.
Claim 20
Dependent Claim
37 words
The method of claim 15 , wherein said relatively high stud shape is formed by using time as a relatively early polish stopper, during the planarization of the associated second blanket polysilicon layer, by means of CMP.
Claim 21
Dependent Claim
27 words
The method of claim 16 , wherein said selective chemical etch back is comprised of a chemical mixture, such as: (1:1:5) ammonia peroxide, peroxide and DI water.
Claim 22
Dependent Claim
35 words
The method of claim 16 , wherein a first RTP anneal Step is performed using a temperature range of about 720 to 750 degrees centigrade and for a time of about 30 to 60 seconds.
Claim 23
Dependent Claim
34 words
The method of claim 16 , wherein a second RTP anneal is performed using a temperature range of about 820 to 850 degrees centigrade and for a time of about 10 to 30 seconds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |