Patent US6169029B1 successfully refreshed from Google Patents.
US6169029B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of solving metal stringer problem which is induced by the product of tin and organic ARC reaction
Assignee: Winbond Electronics Corp
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Filing: 1999-05-03
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Granted: 2001-01-02
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Expires: 2019-05-03
Abstract
Abstract A process for fabricating a sub-micron or deep sub-micron semiconductor device on a wafer surface with an improved anti-reflective coating is disclosed. It includes the steps of: (a) depositing an aluminum layer on a wafer surface; (b) depositing an inorganic anti-reflective layer TiN on top of the aluminum layer; (c) depositing a dielectric partitioning layer, typically a polymer layer, on top of the TiN layer; (d) depositing an organic anti-reflective layer on the dielectric partitioning layer; (e) depositing a photoresist on the organic anti-reflective layer; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing the organic anti-reflective the and the dielectric partitioning layer not covered by the photoresist using an oxide etcher; and (h) removing the TiN layer and the metal layer also not covered by the photoresist using a metal etcher. This process eliminates the formation of an oxidized composition that can be formed at the interface between the TiN layer and the organic anti-reflective layer which can cause a decrease in production yield.
Inventors
- 👤 Ching-Sheng Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P50/00; H10P50/71; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
180 words
A process for fabricating a metal pattern on a wafer surface, comprising the steps of: (a) depositing a metal layer on a wafer surface; (b) depositing an inorganic anti-reflective layer on top of said metal layer; (c) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a first organic material that will not react with said inorganic anti-reflective layer to form an immovable material; (d) depositing an organic anti-reflective layer on said partitioning layer, said photoresist being of a third organic material different from said first and second material; (e) depositing a photoresist on said organic anti-reflective layer; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing said organic anti-reflective layer and said partitioning layer not covered by the photoresist using an oxide etcher; (h) removing said inorganic anti-reflective layer and said metal layer also not covered by the photoresist using a metal etcher; and (i) removing all the layers above said metal layer to reveal a metal pattern.
Claim 2
Dependent Claim
180 words
A process for fabricating a metal pattern on a wafer surface, comprising the steps of: (a) depositing a metal layer on a wafer surface; (b) depositing an inorganic anti-reflective layer on top of said metal layer; (c) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a first organic material that will not react with said inorganic anti-reflective layer to form an immovable material; (d) depositing an organic anti-reflective layer on said partitioning layer, said photoresist being of a third organic material different from said first and second material; (e) depositing a photoresist on said organic anti-reflective layer; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing said organic anti-reflective layer and said partitioning layer not covered by the photoresist using an oxide etcher; (h) removing said inorganic anti-reflective layer and said metal layer also not covered by the photoresist using a metal etcher; and (i) removing all the layers above said metal layer to reveal a metal pattern.
Claim 3
Dependent Claim
24 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 , wherein said metal layer is an aluminum layer.
Claim 4
Dependent Claim
54 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 which further comprises the steps of depositing a barrier layer on the wafer surface before the deposition of the metal layer, wherein said barrier layer comprises a titanium layer and, on top of the titanium layer, a TiN layer.
Claim 5
Dependent Claim
24 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 wherein said inorganic anti-reflective layer is a TiN layer.
Claim 6
Dependent Claim
34 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 wherein said partitioning layer is deposited from a polymer material which does not react with said inorganic anti-reflective layer.
Claim 7
Dependent Claim
38 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 wherein said inorganic layer comprises at least one material selected from the group consisting of TiN, Si 3 N 4 , and TiW.
Claim 8
Dependent Claim
27 words
The process for fabricating a metal pattern on a wafer surface according to claim 1 wherein said organic anti-reflective layer is deposited from a anti-reflective polymer material.
Claim 9
Dependent Claim
180 words
A process for forming an anti-reflective coating on a metal layer in the fabrication of sub-micron or deep sub-micron semiconductor devices on a wafer surface, comprising the steps of: (a) depositing an inorganic anti-reflective layer on top of a metal layer which has been formed on a wafer surface; (b) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a first organic material that will not react with said inorganic anti-reflective layer to form an immovable material; and (c) depositing an organic anti-reflective layer on said partitioning layer, said organic anti-reflective layer being of a second organic material, different from said first material; (d) wherein said partitioning layer, which separates said organic anti-reflective layer from said inorganic anti-reflective layer, prevents a reaction between said organic anti-reflective layer from said inorganic anti-reflective layer, depositing a photoresist on said organic anti-reflective layer, said photoresist being of a third organic material different from said first and second materials; a 2 said organic anti-reflective layer being of a second organic material, different from said first material.
Claim 10
Dependent Claim
180 words
A process for forming an anti-reflective coating on a metal layer in the fabrication of sub-micron or deep sub-micron semiconductor devices on a wafer surface, comprising the steps of: (a) depositing an inorganic anti-reflective layer on top of a metal layer which has been formed on a wafer surface; (b) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a first organic material that will not react with said inorganic anti-reflective layer to form an immovable material; and (c) depositing an organic anti-reflective layer on said partitioning layer, said organic anti-reflective layer being of a second organic material, different from said first material; (d) wherein said partitioning layer, which separates said organic anti-reflective layer from said inorganic anti-reflective layer, prevents a reaction between said organic anti-reflective layer from said inorganic anti-reflective layer, depositing a photoresist on said organic anti-reflective layer, said photoresist being of a third organic material different from said first and second materials; a 2 said organic anti-reflective layer being of a second organic material, different from said first material.
Claim 11
Dependent Claim
24 words
The process for forming an anti-reflective coating on a metal layer according to claim 8 , wherein said metal layer is an aluminum layer.
Claim 12
Dependent Claim
24 words
The process for forming an anti-reflective coating on a metal layer according to claim 8 wherein said inorganic anti-reflective layer is a TiN layer.
Claim 13
Dependent Claim
34 words
The process for forming an anti-reflective coating on a metal layer according to claim 8 wherein said partitioning layer is deposited from a polymer material which does not react with said inorganic anti-reflective layer.
Claim 14
Dependent Claim
38 words
The process for forming an anti-reflective coating on a metal layer according to claim 8 wherein said inorganic layer comprises at least one material selected from the group consisting of TiN, Si 3 N 4 , and TiW.
Claim 15
Dependent Claim
27 words
The process for forming an anti-reflective coating on a metal layer according to claim 8 wherein said organic anti-reflective layer is deposited from a anti-reflective polymer material.
Claim 16
Dependent Claim
199 words
A process for fabricating a sub-micron or deep sub-micron semiconductor device on a wafer surface, comprising the steps of: (a) depositing a metal layer on a wafer surface; (b) depositing an inorganic anti-reflective layer on top of said metal layer; (c) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a material first organic that will not react with said inorganic anti-reflective layer to form an immovable material; (d) depositing an organic anti-reflective layer on said partitioning layer said organic anti-reflective layer being of a second organic material, different from said first material; (e) depositing a photoresist on said organic anti-reflective layer, said photoresist being of a third organic material different from said first and second materials; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing said organic anti-reflective said and said partitioning layer not covered by the photoresist using an oxide etcher; (h) removing said inorganic anti-reflective layer and said metal layer also not covered by the photoresist using a metal etcher; and (i) removing all the layers above said metal layer to reveal a metal pattern.
Claim 17
Dependent Claim
199 words
A process for fabricating a sub-micron or deep sub-micron semiconductor device on a wafer surface, comprising the steps of: (a) depositing a metal layer on a wafer surface; (b) depositing an inorganic anti-reflective layer on top of said metal layer; (c) depositing a partitioning layer on top of said inorganic anti-reflective layer, said partitioning layer is deposited from a material first organic that will not react with said inorganic anti-reflective layer to form an immovable material; (d) depositing an organic anti-reflective layer on said partitioning layer said organic anti-reflective layer being of a second organic material, different from said first material; (e) depositing a photoresist on said organic anti-reflective layer, said photoresist being of a third organic material different from said first and second materials; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing said organic anti-reflective said and said partitioning layer not covered by the photoresist using an oxide etcher; (h) removing said inorganic anti-reflective layer and said metal layer also not covered by the photoresist using a metal etcher; and (i) removing all the layers above said metal layer to reveal a metal pattern.
Claim 18
Dependent Claim
37 words
The process for fabricating a sub-micron or deep sub-micron semiconductor device on a wafer surface according to claim 14 , wherein said metal layer is an aluminum layer, and said inorganic anti-reflective layer is a TiN layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-02 | 2004-07-03 | 2005-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-02 | 2008-07-03 | 2009-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-02 | 2012-07-03 | 2013-01-02 | $7700.00 | Window Closed / Lapsed |