US6156589A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compact SOI body contact link
Assignee: Micron Technology Inc
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Filing: 1998-09-03
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Granted: 2000-12-05
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Expires: 2018-09-03
Abstract
Abstract A method and structure for a silicon on insulator (SOI) device with a body contact are provided. The body contact is formed by epitaxial growth from a substrate to the body region of the device. The body contact is self-aligned with the gate of the device and is buried within an isolation region outside of the active area of the device. Thus, the body contact does not increase parasitic capacitance in the device, not does the body contact affect device density. No additional metal wiring or contact holes are required.
Inventors
- 👤 Wendell P. Noble
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6711; H10D30/6729; H10D30/673; H10D30/6733; H10D86/00; H10D86/01; H10D86/201
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
127 words
A method of fabricating a silicon on insulator (SOI) device, the method comprising: forming a single crystalline semiconductor structure having an upper surface, wherein the structure includes a first source/drain region, a body region having opposing sidewalls, and a second source/drain region, and wherein the structure is formed on an insulator layer on a substrate; forming a gate above the single crystalline semiconductor structure, wherein the gate extends beyond portions of the single crystalline semiconductor structure to cover portions of an isolation region; and forming a body contact, wherein the body contact couples the substrate to one of the opposing sidewalls of the body region, and wherein forming the body contact includes removing an exposed portion of the body contact using the gate as an etch mask.
Claim 2
Independent Claim
127 words
A method of fabricating a silicon on insulator (SOI) device, the method comprising: forming a single crystalline semiconductor structure having an upper surface, wherein the structure includes a first source/drain region, a body region having opposing sidewalls, and a second source/drain region, and wherein the structure is formed on an insulator layer on a substrate; forming a gate above the single crystalline semiconductor structure, wherein the gate extends beyond portions of the single crystalline semiconductor structure to cover portions of an isolation region; and forming a body contact, wherein the body contact couples the substrate to one of the opposing sidewalls of the body region, and wherein forming the body contact includes removing an exposed portion of the body contact using the gate as an etch mask.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein forming the body contact includes forming the body contact by epitaxial growth.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein forming the body contact includes forming the body contact in the isolation region.
Claim 5
Dependent Claim
34 words
The method of claim 1, wherein forming the body region includes forming the body region from n- silicon material, and wherein forming the body contact includes forming the body contact from n- silicon material.
Claim 6
Dependent Claim
34 words
The method of claim 1, wherein forming the body region includes forming the body region from p- silicon material, and wherein forming the body contact includes forming the body contact from p- silicon material.
Claim 7
Independent Claim
93 words
A method of forming a body contacted transistor on an insulator layer, comprising: forming an active region of the transistor, the active region including first source/drain region, a second source/drain region, and a body region; forming a gate located above the body region and between the first and second source/drain region; and forming a body contact, wherein the body contact is coupled to a substrate in an isolation region, wherein the body contact is coupled to the body region, and wherein forming the body contact includes using the gate as an etch mask.
Claim 8
Independent Claim
93 words
A method of forming a body contacted transistor on an insulator layer, comprising: forming an active region of the transistor, the active region including first source/drain region, a second source/drain region, and a body region; forming a gate located above the body region and between the first and second source/drain region; and forming a body contact, wherein the body contact is coupled to a substrate in an isolation region, wherein the body contact is coupled to the body region, and wherein forming the body contact includes using the gate as an etch mask.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein forming the body contact includes forming the body contact self-aligned with the gate.
Claim 10
Dependent Claim
18 words
The method of claim 6, wherein forming the body contact includes forming the body contact by epitaxial growth.
Claim 11
Dependent Claim
34 words
The method of claim 6, wherein forming the body region includes forming the body region from p- silicon material, and wherein forming the body contact includes forming the body contact from p- silicon material.
Claim 12
Dependent Claim
34 words
The method of claim 6, wherein forming the body region includes forming the body region from n- silicon material, and wherein forming the body contact includes forming the body contact from n- silicon material.
Claim 13
Independent Claim
83 words
A method of forming a body contacted transistor, comprising: forming an active region of the transistor, the active region including first source/drain region, a second source/drain region, and a body region; forming a gate located above the body region and between the first and second source/drain region; epitaxially growing a body contact in an isolation region such that the body contact couples a substrate to the body region; and removing exposed portions of the body contact using the gate as an etch mask.
Claim 14
Independent Claim
83 words
A method of forming a body contacted transistor, comprising: forming an active region of the transistor, the active region including first source/drain region, a second source/drain region, and a body region; forming a gate located above the body region and between the first and second source/drain region; epitaxially growing a body contact in an isolation region such that the body contact couples a substrate to the body region; and removing exposed portions of the body contact using the gate as an etch mask.
Claim 15
Independent Claim
98 words
A method of fabricating a silicon on insulator (SOI) device on a substrate, the method comprising: forming a transistor having a source, a drain, and a body, wherein the body includes opposing sidewalls; forming a gate above an upper surface of the body, wherein the gate extends beyond portions of the body to cover portions of an isolation region; and forming a body contact in the isolation region, wherein the body contact couples the substrate to one of the opposing sidewalls of the body, and wherein forming the body contact includes using the gate as an etch mask.
Claim 16
Independent Claim
98 words
A method of fabricating a silicon on insulator (SOI) device on a substrate, the method comprising: forming a transistor having a source, a drain, and a body, wherein the body includes opposing sidewalls; forming a gate above an upper surface of the body, wherein the gate extends beyond portions of the body to cover portions of an isolation region; and forming a body contact in the isolation region, wherein the body contact couples the substrate to one of the opposing sidewalls of the body, and wherein forming the body contact includes using the gate as an etch mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |