US6156581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
GaN-based devices using (Ga, AL, In)N base layers
Assignee: Wolfspeed Inc
•
Filing: 1997-12-03
•
Granted: 2000-12-05
•
Expires: 2017-12-03
Abstract
Abstract A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.
Inventors
- 👤 Robert P. Vaudo
- 👤 Joan M. Redwing
- 👤 Michael A. Tischler
- 👤 Duncan W. Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:15
CPC Classifications
C; C30; C30B; C30B33/00; B; B82; B82Y; B82Y15/00; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/36; C30B29/40; C30B29/403; C30B29/406; H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; H10P14/38; H10H20/018; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10T; Y10T428/00; Y10T428/13; Y10T428/21
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
64 words
A method of forming a base structure for fabrication of a microelectronic device structure thereon, comprising reacting a vapor-phase (Ga, Al, In) composition with a vapor-phase nitrogenous compound in the presence of a substrate, to grow a (Ga, Al, In) nitride base layer on the substrate, thereby yielding a microelectronic device foundation comprising the substrate with the (Ga, Al, In) nitride base layer thereon.
Claim 2
Independent Claim
64 words
A method of forming a base structure for fabrication of a microelectronic device structure thereon, comprising reacting a vapor-phase (Ga, Al, In) composition with a vapor-phase nitrogenous compound in the presence of a substrate, to grow a (Ga, Al, In) nitride base layer on the substrate, thereby yielding a microelectronic device foundation comprising the substrate with the (Ga, Al, In) nitride base layer thereon.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein the vapor-phase (Ga, Al, In) composition comprises (Ga, Al, In) chloride or (Ga, Al, In) bromide.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein the base layer of (Ga, Al, In) nitride comprises a single-crystal, crack-free base layer of (Ga, Al, In) nitride.
Claim 5
Dependent Claim
27 words
A method according to claim 1, wherein the base layer of (Ga, Al, In) nitride has a defect density not greater than about 1E8 defects/cm 2 .
Claim 6
Dependent Claim
27 words
A method according to claim 1, wherein the base layer of (Ga, Al, In) nitride has a defect density not greater than about 1E7 defects/cm 2 .
Claim 7
Dependent Claim
19 words
A method according to claim 1, wherein the thickness of the base layer is at least about 2 microns.
Claim 8
Dependent Claim
25 words
A method according to claim 1, wherein the base layer is formed of a material selected from the group consisting of GaN, AlN, and InN.
Claim 9
Dependent Claim
25 words
A method according to claim 1, wherein the base layer is formed of a material selected from the group consisting of GaAlN, GaInN, and AlInN.
Claim 10
Dependent Claim
17 words
A method according to claim 1, wherein the base layer is formed of a material comprising GaAlInN.
Claim 11
Dependent Claim
17 words
A method according to claim 1, wherein the base layer is formed of a material comprising GaN.
Claim 12
Dependent Claim
17 words
A method according to claim 1, wherein the base layer is formed of a material comprising AlN.
Claim 13
Dependent Claim
17 words
A method according to claim 1, wherein the base layer is formed of a material comprising InN.
Claim 14
Dependent Claim
14 words
A method according to claim 1; wherein the substrate comprises a single crystal material.
Claim 15
Dependent Claim
13 words
A method according to claim 1, wherein the substrate comprises a polycrystalline material.
Claim 16
Dependent Claim
29 words
A method according to claim 1, wherein the substrate comprises a material that is matched in thermal coefficient of expansion to the base layer of (Ga, Al, In) nitride.
Claim 17
Dependent Claim
48 words
A method according to claim 1, wherein the substrate is formed of a material selected from the group consisting of sapphire, silicon, silicon carbide, diamond, lithium gallate, lithium aluminate, ScAlMgO 4 , zinc oxide, spinel, magnesium oxide, gallium arsenide, glass, silicon-on-insulator, carbonized silicon-on-insulator, carbonized silicon-on-silicon and gallium nitride.
Claim 18
Dependent Claim
11 words
A method according to claim 1, wherein the substrate comprises sapphire.
Claim 19
Dependent Claim
14 words
A method according to claim 1, wherein the substrate comprises graphite and aluminum nitride.
Claim 20
Dependent Claim
15 words
A method according to claim 1, further comprising removing the substrate from the base layer.
Claim 21
Dependent Claim
19 words
A method according to claim 19, wherein the substrate is removed from base layer by chemical and/or mechanical process.
Claim 22
Dependent Claim
29 words
A method according to claim 1, wherein the substrate is selected from the group consisting of conductive substrates, insulating substrates, semi-insulating substrates, twist-bonded substrates, compliant substrates, and patterned substrates.
Claim 23
Dependent Claim
24 words
A method according to claim 1, wherein the layer of single crystal (Ga, Al, In)N is deposited directly on the surface of the substrate.
Claim 24
Dependent Claim
35 words
A method according to claim 1, wherein the layer of single crystal (Ga, Al, In)N is deposited on an uppermost surface of one or more intermediate layers which in turn are provided on the substrate.
Claim 25
Dependent Claim
29 words
A method according to claim 1, wherein an intermediate layer is provided between the substrate and the base layer, and the intermediate layer comprises a material other than ZnO.
Claim 26
Dependent Claim
45 words
A method according to claim 1, wherein an intermediate layer is provided between the substrate and the base layer, and the intermediate layer comprises a material selected from the group consisting of SiC, (Ga, Al, In)N, and alloys of ZnO, SiC and (Ga, Al, In)N.
Claim 27
Dependent Claim
44 words
A method according to claim 1, wherein an intermediate layer is provided between the substrate and the base layer, and the intermediate layer comprises a material selected from the group consisting of SiC, (Ga, Al, In)N, and alloys of SiC and (Ga, Al, In)N.
Claim 28
Dependent Claim
25 words
A method according to claim 1, wherein the substrate is formed of a material selected from the group consisting of sapphire, silicon, and silicon carbide.
Claim 29
Dependent Claim
23 words
A method according to claim 1, wherein the substrate is selected from the group consisting of conductive substrates, insulating substrates, and semi-insulating substrates.
Claim 30
Dependent Claim
24 words
A method according to claim 1, wherein the layer of single crystal (Ga, Al, In)N is deposited directly on the surface of the substrate.
Claim 31
Dependent Claim
36 words
A method according to claim 1, wherein the layer of single crystal (Ga, Al, In)N is deposited on an uppermost surface of one or more intermediate layers which in turn are provided on the crystalline substrate.
Claim 32
Independent Claim
37 words
A method according to claims 30, wherein the one or more intermediate layers is comprised of a material selected from the group consisting of ZnO, SiC, (Ga, Al, In)N, and alloys of SiC and (Ga, Al, In)N.
Claim 33
Dependent Claim
36 words
A method according to claim 30, wherein the one or more intermediate layers is comprised of a material selected from the group consisting of SiC, (Ga, Al, In)N, and alloys of SiC and (Ga, Al, In)N.
Claim 34
Dependent Claim
21 words
A method according to claim 30, wherein the one or more intermediate layers is comprised of a material other than ZnO.
Claim 35
Dependent Claim
48 words
A method according to claim 30, wherein the one or more intermediate layers comprise a protective layer provided thereon prior to growth of the (Ga, Al, In)N base layer, so that the protective layer prevents decomposition of the substrate while (Ga, Al, In)N base layer growth is proceeding.
Claim 36
Dependent Claim
34 words
A method according to claim 30, wherein the one or more intermediate layers modify the electrical properties of the (Ga, Al, In)N base structure, as compared to a corresponding structure lacking such intermediate layers.
Claim 37
Dependent Claim
33 words
A method according to claim 35, wherein the one or more intermediate layers increase the conductivity of the (Ga, Al, In)N base structure, as compared to a corresponding structure lacking such intermediate layers.
Claim 38
Dependent Claim
33 words
A method according to claim 35, wherein the one or more intermediate layers decrease the conductivity of the (Ga, Al, In)N base structure, as compared to a corresponding structure lacking such intermediate layers.
Claim 39
Dependent Claim
22 words
A method according to claim 1, wherein the thickness of the base layer is from about 0.5 microns to about 1000 microns.
Claim 40
Dependent Claim
22 words
A method according to claim 1, wherein the thickness of the base layer is from about 2 microns to about 25 microns.
Claim 41
Dependent Claim
22 words
A method according to claim 1, wherein the thickness of the base layer is from about 5 microns to about 20 microns.
Claim 42
Dependent Claim
31 words
A method according to claim 1, having a light emitting diode fabricated thereon, said light emitting diode having a FWHM electroluminescence spectrum peak, below threshold current, of less than 15 nm.
Claim 43
Dependent Claim
20 words
A method according to claim 41, wherein the light emitting diode comprises an InGaN light emitting diode structure base layer.
Claim 44
Dependent Claim
27 words
A method according to claim 1, further comprising forming an epitaxial layer on the base structure wherein the epitaxial layer has a V-defect density less than 1E9.
Claim 45
Dependent Claim
27 words
A method according to claim 1, further comprising forming an epitaxial layer on the base structure wherein the epitaxal layer has a V-defect density less than 1E8.
Claim 46
Dependent Claim
27 words
A method according to claim 1, further comprising forming an epitaxial layer on the base structure wherein the epitaxial layer has a V-defect density less than 1E7.
Claim 47
Dependent Claim
44 words
A method according to claim 1, wherein the base layer is greater than 100 micrometers in thickness and has a defect density, measured on sapphire as a reference material, that is less than about 1E7 defects/cm 2 at the upper surface of the material.
Claim 48
Dependent Claim
22 words
A method according to claim 1, wherein the nitrogenous compound is selected from the group consisting of ammonia, hydrazine, amines, and polyamine.
Claim 49
Dependent Claim
16 words
A method according to claim 1, wherein said vapor-phase (Ga, Al, In) composition comprises Ga chloride.
Claim 50
Dependent Claim
26 words
A method according to claim 48, wherein the Ga chloride is formed by contacting vapor-phase hydrogen chloride with molten gallium to yield the vapor-phase Ga chloride.
Claim 51
Dependent Claim
21 words
A method according to claim 48, wherein the base layer is grown at a growth rate of at least 10 μm/hour.
Claim 52
Dependent Claim
21 words
A method according to claim 48, wherein the base layer is grown at a growth rate of at least 50 μm/hour.
Claim 53
Dependent Claim
38 words
A method according to claim 48, wherein the base layer is grown to produce a single-crystal, substantially crack-free base layer characterized by an upper surface region with a defect density of less than 10 8 defects/cm 3 .
Claim 54
Dependent Claim
38 words
A method according to claim 48, wherein the base layer is grown to produce a single-crystal, substantially crack-free base layer characterized by an upper surface region with a defect density of less than 10 7 defects/cm 3 .
Claim 55
Dependent Claim
24 words
A method according to claim 48, wherein the base layer comprises GaN and the growth temperature is from about 900 to about 1200° C.
Claim 56
Dependent Claim
24 words
A method according to claim 48, wherein the base layer comprises InN and the growth temperature is from about 650 to about 1000° C.
Claim 57
Dependent Claim
24 words
A method according to claim 48, wherein the base layer comprises AlN and the growth temperature is from about 900 to about 1400° C.
Claim 58
Dependent Claim
20 words
A method according to claim 48, wherein the base layer comprises GaN and the growth temperature is about 1050° C.
Claim 59
Dependent Claim
20 words
A method according to claim 48, wherein the base layer comprises GaN and the growth temperature is about 1000° C.
Claim 60
Independent Claim
66 words
A method for fabrication of a microelectronic device, comprising reacting vapor-phase (Ga, Al, In) chloride with a vapor-phase nitrogenous compound in the presence of a substrate, to grow a (Ga, Al, In) nitride base layer on the substrate, thereby yielding a microelectronic device foundation comprising the substrate with the (Ga, Al, In) nitride base layer thereon, and subsequently forming a microelectronic device on the base layer.
Claim 61
Independent Claim
66 words
A method for fabrication of a microelectronic device, comprising reacting vapor-phase (Ga, Al, In) chloride with a vapor-phase nitrogenous compound in the presence of a substrate, to grow a (Ga, Al, In) nitride base layer on the substrate, thereby yielding a microelectronic device foundation comprising the substrate with the (Ga, Al, In) nitride base layer thereon, and subsequently forming a microelectronic device on the base layer.
Claim 62
Dependent Claim
43 words
A method according to claim 59, wherein the microelectronic device is formed on the base layer by a process including deposition of device layers by a deposition technique selected from the group consisting of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE).
Claim 63
Dependent Claim
35 words
A method according to claim 59, wherein the microelectronic device is formed on the base layer by a process including at least one process step selected from the group consisting of ion implantation and etching.
Claim 64
Dependent Claim
28 words
A method according to claim 59, wherein the microelectronic device is selected from the group consisting of light emitting diodes, detectors, filters, transistors, rectification circuitry, and semiconductor lasers.
References Cited (Backward Citations)
US4144116A
Cited
US4727047A
Cited
US4622093A
Cited
JPS62183399A
Cited
US4931132A
Cited
US5210051A
Cited
US5810925A
Cited
US5679152A
Cited
US5777350A
Cited
US5874747A
Cited
US5923946A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |