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US6146765A
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Transparent conductive film and method for its production, and sputtering target
Assignee: AGC Inc
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Filing: 1997-08-18
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Granted: 2000-11-14
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Expires: 2017-08-18
Abstract
Abstract A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 .
Inventors
- 👤 Akira Mitsui
- 👤 Kazuo Sato
- 👤 Masami Miyazaki
- 👤 Junichi Ebisawa
- 👤 Yasuo Hayashi
- 👤 Masao Higeta
- 👤 Katsuaki Aikawa
- 👤 Atsushi Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/0641; C23C14/0676; C23C14/086; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; Y; Y10; Y10S; Y10S428/00; Y10S428/91; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31667
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
43 words
A sputtering target comprising zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 2
Dependent Claim
43 words
A sputtering target comprising zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 3
Dependent Claim
18 words
The sputtering target according to claim 1, which has a specific resistance of at most 10 -2 Ωcm.
Claim 4
Independent Claim
54 words
A method for producing a transparent conductive film, the method comprising sputtering a target comprising zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 5
Independent Claim
54 words
A method for producing a transparent conductive film, the method comprising sputtering a target comprising zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 6
Dependent Claim
25 words
The method for producing a transparent conductive film according to claim 3, wherein the target has a specific resistance of at most 10 -2 Ωcm.
Claim 7
Dependent Claim
58 words
A laminate comprising a substrate and a transparent conductive film on the substrate, wherein the transparent conductive film comprises zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 8
Dependent Claim
58 words
A laminate comprising a substrate and a transparent conductive film on the substrate, wherein the transparent conductive film comprises zinc oxide, silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2 , and gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga 2 O 3 .
Claim 9
Dependent Claim
19 words
The laminate according to claim 5, further comprising an undercoat film between the substrate and the transparent conductive film.
Claim 10
Dependent Claim
53 words
The laminate according to claim 6 wherein the material of at least one layer of the undercoat film comprises one oxide, nitride, or oxynitride of an element M, wherein M is at least one element selected from the group consisting of: silicon, tin, titanium, zirconium, hafnium, tantalum, chromium, niobium, boron, zinc and aluminum.
Claim 11
Dependent Claim
20 words
The method of claim 3, wherein said transparent conductive film has a specific resistance of at most 10 -2 Ωcm.
Claim 12
Dependent Claim
20 words
The laminate of claim 5, wherein said transparent conductive film has a specific resistance of at most 10 -2 Ωcm.
Claim 13
Dependent Claim
29 words
The target of claim 1, wherein said zinc is present as an oxide; and said gallium and silicon are present in an oxidized state or in a solid-solubilized state.
Claim 14
Dependent Claim
29 words
The method of claim 3, wherein said zinc is present as an oxide; and said gallium and silicon are present in an oxidized state or in a solid-solubilized state.
Claim 15
Dependent Claim
49 words
The laminate according to claim 6, wherein the overcoat film comprises an oxide, a nitride or an oxynitride of an element M, wherein the element M is at least one element selected from the group consisting of silicon, tin, titanium, zirconium, hafnium, tantalum, chromium, niobium, boron, zinc and aluminum.
Claim 16
Dependent Claim
16 words
The laminate according to claim 5 further comprising an overcoat film on the transparent conductive film.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |