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US6143191A
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Method for etch fabrication of iridium-based electrode structures
Assignee: Gula Consulting LLC
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Filing: 1997-11-10
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Granted: 2000-11-07
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Expires: 2017-11-10
Abstract
Abstract A method of forming an iridium-based electrode structure on a substrate, from an iridium-containing precursor thereof which is decomposed to deposit iridium on the substrate. The iridium-based material is formed on the substrate in a desired environment, e.g., an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, or nitrogen oxide, or alternatively a reducing environment containing a reducing agent such as H 2 , CO or NH 3 . The iridium deposited on the substrate is contacted with an etching reagent such as halogen-based etch species (e.g., Cl 2 , Br 2 , F 2 , CCl 4 , Si 2 F 6 , SiCl 4 , NF 3 , C 2 F 6 , SF 6 , or CF 4 ) formed by exposing halogen to light, laser radiation, plasma, or ion beam, or alternatively with XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure. The electrode structure may then have a dielectric or ferroelectric material deposited thereon, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FeRAMs, hybrid systems, smart cards and communication systems.
Inventors
- 👤 Thomas H. Baum
- 👤 Frank DiMeo, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:32
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; C; C23; C23F; C23F1/00; C23F1/10; C23F1/12; C23F4/00; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
47 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate, comprising: contacting the iridium-based material with an etching reagent comprising XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure.
Claim 2
Independent Claim
47 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate, comprising: contacting the iridium-based material with an etching reagent comprising XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure.
Claim 3
Dependent Claim
46 words
A method according to claim 1, wherein the iridium-based material is formed on the substrate by a deposition process selected from the group consisting of: sol-gel, chemical vapor deposition (CVD), plasma-assisted CVD, ion beam-assisted CVD, sputtering, evaporation, rapid thermal processing, molecular beam epitaxy, and ion plating.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein the iridium-based material is formed on the substrate in an oxidizing ambient environment.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein the oxidizing ambient environment comprises an ambient air environment.
Claim 6
Dependent Claim
12 words
A method according to claim 1, wherein the iridium-based material comprises Ir.
Claim 7
Dependent Claim
14 words
A method according to claim 1, wherein the iridium-based material comprises IrO 2 .
Claim 8
Dependent Claim
41 words
A method according to claim 1, wherein the step of contacting the iridium-based material with an etching reagent is carried out with a co-reactant to assist in the volatilization and removal of Ir(I)X and/or Ir(III)X 3 species from the iridium-based material.
Claim 9
Dependent Claim
15 words
A method according to claim 1, wherein the etching is carried out at room temperature.
Claim 10
Dependent Claim
15 words
A method according to claim 1, wherein the etching is carried out above room temperature.
Claim 11
Dependent Claim
15 words
A method according to claim 1, wherein the etching is carried out below room temperature.
Claim 12
Dependent Claim
17 words
A method according to claim 1, wherein the etching reagent comprises XeF 2 sublimed at room temperature.
Claim 13
Independent Claim
129 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate, comprising: contacting the iridium-based material with an etching reagent selected from the group consisting of: (i) halogen etch species formed by exposing a halogen to an energizingly effective agent selected from the group consisting of light, laser radiation, plasma, and ion beam, to yield energized halogen etch species which are effective in etching upon contact with the iridium-based material; and (ii) XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure, further comprising enhancing the rate of of etching by conducting such etching in the presence of an etch-enhancing agent selected from the group consisting of Lewis-based adducts and electron back-bonding species.
Claim 14
Independent Claim
129 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate, comprising: contacting the iridium-based material with an etching reagent selected from the group consisting of: (i) halogen etch species formed by exposing a halogen to an energizingly effective agent selected from the group consisting of light, laser radiation, plasma, and ion beam, to yield energized halogen etch species which are effective in etching upon contact with the iridium-based material; and (ii) XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure, further comprising enhancing the rate of of etching by conducting such etching in the presence of an etch-enhancing agent selected from the group consisting of Lewis-based adducts and electron back-bonding species.
Claim 15
Independent Claim
142 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate comprising: contacting the iridium-based material with an etching reagent selected from the group consisting of: (i) halogen etch species formed by exposing a halogen to an energizingly effective agent selected from the group consisting of light, laser radiation, plasma, and ion beam, to yield energized halogen etch species which are effective in etching upon contact with the iridium-based material: and (ii) XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure, further comprising enhancing the rate of of etching by conducting such etching in the presence of an etch-enhancing agent selected from the group consisting of carbon monoxide, trifluorophosphine, and trialkylphosphines whose alkyl moiety is selected from C 1 -C 8 alkyl, alkenes and perfluoroalkenes.
Claim 16
Independent Claim
142 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate comprising: contacting the iridium-based material with an etching reagent selected from the group consisting of: (i) halogen etch species formed by exposing a halogen to an energizingly effective agent selected from the group consisting of light, laser radiation, plasma, and ion beam, to yield energized halogen etch species which are effective in etching upon contact with the iridium-based material: and (ii) XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form an etched iridium-based material structure, further comprising enhancing the rate of of etching by conducting such etching in the presence of an etch-enhancing agent selected from the group consisting of carbon monoxide, trifluorophosphine, and trialkylphosphines whose alkyl moiety is selected from C 1 -C 8 alkyl, alkenes and perfluoroalkenes.
Claim 17
Independent Claim
64 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate comprising: contacting the iridium-based material with an etching agent comprising XeF 2 , further comprising enhancing the rate of etching by conducting such etching in the presence of an etch-enhancing condition selected from the group consisting of the presence of inert gas, plasma-assisted etching, ion beam-assisted etching, and photo-assisted etching.
Claim 18
Independent Claim
64 words
A method of fabricating an iridium-based material structure from iridium-based material on a substrate comprising: contacting the iridium-based material with an etching agent comprising XeF 2 , further comprising enhancing the rate of etching by conducting such etching in the presence of an etch-enhancing condition selected from the group consisting of the presence of inert gas, plasma-assisted etching, ion beam-assisted etching, and photo-assisted etching.
Claim 19
Dependent Claim
27 words
A method according to claim 1, further comprising depositing over the etched iridium-based material structure a material selected from the group consisting of dielectric and ferroelectric materials.
Claim 20
Dependent Claim
36 words
A method according to claim 15, wherein the dielectric or ferroelectric material deposited over the etched iridium-based material structure is deposited in the same oxidizing ambient environment as employed for the deposition of the iridium-based material.
Claim 21
Dependent Claim
16 words
A method according to claim 1, wherein the substrate comprises a dielectric material or ferroelectric material.
Claim 22
Dependent Claim
11 words
A method according to claim 1, wherein the substrate comprises BST.
Claim 23
Dependent Claim
37 words
A method according to claim 18, wherein the iridium-based material constitutes a top electrode structural material and provides a hard mask layer for patterning the BST thereunder during said etching to yield a self-aligned capacitive electrode structure.
Claim 24
Independent Claim
82 words
A method of fabricating an iridium-based electrode structure on a substrate, comprising: forming an iridium-based material on the substrate at an elevated substrate temperature; lithographically patterning the deposited iridium-based material on the substrate to a desired electrode pattern using a resist applied to the substrate and lithographically developed thereon; contacting the deposited iridium-based material with an etching reagent comprising XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure.
Claim 25
Independent Claim
82 words
A method of fabricating an iridium-based electrode structure on a substrate, comprising: forming an iridium-based material on the substrate at an elevated substrate temperature; lithographically patterning the deposited iridium-based material on the substrate to a desired electrode pattern using a resist applied to the substrate and lithographically developed thereon; contacting the deposited iridium-based material with an etching reagent comprising XeF 2 , for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure.
Claim 26
Dependent Claim
26 words
A method according to claim 20, wherein the iridium-based material is deposited on a dielectric or ferroelectric material substrate, to form a top electrode structure thereon.
Claim 27
Dependent Claim
31 words
A method according to claim 21, wherein the dielectric or ferroelectric material substrate comprises a material selected from the group consisting of SBT, PZT, BST, PLZT, PNZT, and LaCaMnO 3 .
Claim 28
Dependent Claim
17 words
A method according to claim 21, wherein the dielectric or ferroelectric material comprises BST or SBT, respectively.
Claim 29
Dependent Claim
20 words
A method according to claim 20, wherein a dielectric or ferroelectric material is deposited over the etched iridium-based electrode structure.
Claim 30
Dependent Claim
31 words
A method according to claim 24, wherein the dielectric or ferroelectric material substrate comprises a material selected from the group consisting of SBT, PZT, BST, PLZT, PNZT, and LaCaMnO 3 .
References Cited (Backward Citations)
US4026742A
Cited
US5705443A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |