US6136218A
Expired / Lapsed
US
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Planarization fluid composition including chelating agents
Assignee: Micron Technology Inc
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Filing: 1999-02-26
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Granted: 2000-10-24
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Expires: 2019-02-26
Abstract
Abstract A planarization method including the provision of a wafer having a wafer surface. A pad is positioned for contact with the wafer surface and the wafer surface is planarized using the pad and a fluid composition that includes a chelating agent. The chelating agent is a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). A fluid composition for use in planarization of a surface of a wafer includes a chemically interactive component that interacts with the surface of the wafer and a chelating agent for reducing the metal ion contamination of the wafer during planarization. The chelating agent may be one of a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). Further, the fluid composition may include an abrasive component.
Inventors
- 👤 John Skrovan
- 👤 Scott Meikle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:50
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; C; C09; C09G; C09G1/00; C09G1/02; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
53 words
A fluid composition for use in planarization of a surface of a wafer, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent is 1,2-ethylenediphosphonic acid (EDP).
Claim 2
Dependent Claim
53 words
A fluid composition for use in planarization of a surface of a wafer, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent is 1,2-ethylenediphosphonic acid (EDP).
Claim 3
Dependent Claim
32 words
The fluid composition according to claim 1, wherein the EDP of the fluid composition is of an amount less than about 0.5% by weight of the total weight of the fluid composition.
Claim 4
Dependent Claim
32 words
The fluid composition according to claim 2, wherein the EDP of the fluid composition is of an amount less than about 0.1% by weight of the total weight of the fluid composition.
Claim 5
Dependent Claim
149 words
A fluid composition for use in planarization of a surface of a wafer, the surface including oxide material, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent reduces a concentration of uncomplexed metal ions for at least one metal of a plurality of metals with respect to the wafer after a planarization process as compared to the concentration of uncomplexed metal ions for the at least one metal when the chelating agent is not used in the fluid composition in a planarization process for the wafer surface while maintaining substantially a same or greater planarization rate for the oxide material when the chelating agent is used compared to a planarization rate for the oxide material when the chelating agent is not used.
Claim 6
Dependent Claim
149 words
A fluid composition for use in planarization of a surface of a wafer, the surface including oxide material, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent reduces a concentration of uncomplexed metal ions for at least one metal of a plurality of metals with respect to the wafer after a planarization process as compared to the concentration of uncomplexed metal ions for the at least one metal when the chelating agent is not used in the fluid composition in a planarization process for the wafer surface while maintaining substantially a same or greater planarization rate for the oxide material when the chelating agent is used compared to a planarization rate for the oxide material when the chelating agent is not used.
Claim 7
Dependent Claim
15 words
The fluid composition according to claim 4, wherein the chelating agent is 1,2-ethylenediphosphonic acid (EDP).
Claim 8
Dependent Claim
56 words
A fluid composition for use in planarization of a surface of a wafer, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; an abrasive component; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent is 1,2-ethylenediphosphonic acid (EDP).
Claim 9
Dependent Claim
56 words
A fluid composition for use in planarization of a surface of a wafer, the fluid composition comprising: a chemically interactive component that interacts with the surface of the wafer during planarization; an abrasive component; and a chelating agent for reducing the ion contamination of the wafer during planarization, wherein the chelating agent is 1,2-ethylenediphosphonic acid (EDP).
Claim 10
Dependent Claim
32 words
The fluid composition according to claim 6, wherein the EDP of the fluid composition is of an amount less than about 0.5% by weight of the total weight of the fluid composition.
Claim 11
Dependent Claim
32 words
The fluid composition according to claim 7, wherein the EDP of the fluid composition is of an amount less than about 0.1% by weight of the total weight of the fluid composition.
Claim 12
Dependent Claim
98 words
The fluid composition according to claim 6, wherein the chelating agent reduces a concentration of uncomplexed metal ions for at least one metal of a plurality of metals with respect to the wafer after a planarization process as compared to the concentration of uncomplexed metal ions for the at least one metal when the chelating agent is not used in the fluid composition in a planarization process for the wafer surface while maintaining substantially a same or greater planarization rate when the chelating agent is used compared to a planarization rate when the chelating agent is not used.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |