US5827781A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planarization slurry including a dispersant and method of using same
Assignee: Micron Technology Inc
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Filing: 1996-07-17
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Granted: 1998-10-27
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Expires: 2016-07-17
Abstract
Abstract A planarization method includes providing a wafer surface and positioning a pad for contact with the wafer surface. The wafer surface is then planarized using the pad and a slurry. The slurry includes a dispersant which is one of any micellar forming surfactants. Preferably, the dispersant is a diprotic acid having 6 or less carbons connecting the acid groups, more preferably a diphosphonic acid with 4 or less carbon atoms connecting the acid groups, and most preferably is 1,2-ethylenediphosphonic acid (EDP). The wafer surface may be either a nonplanar or a substantially planar wafer surface. Another slurry that can be used in the method includes a slurry component including an abrasive component and a chemically interactive component that interacts with the surface. The slurry component when used alone in a planarization of the surface results in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the surface. The slurry further includes a dispersant component of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the surface is performed with the slurry including the slurry component and the dispersant component. The planarization of the surface performed with the slurry including the slurry component and the dispersant component has a second rate of removal substantially equivalent to the first rate of removal.
Inventors
- 👤 John Skrovan
- 👤 Karl M. Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:22
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; C; C09; C09G; C09G1/00; C09G1/02; C09K; C09K3/00; C09K3/14; C09K3/1454; C09K3/1463
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
59 words
A planarization method comprising the steps of: providing a wafer surface; positioning a pad for contact with the wafer surface; and planarizing the wafer surface using the pad and a slurry, the slurry including a dispersant, the dispersant being one of any micellar forming surfactants selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 2
Dependent Claim
59 words
A planarization method comprising the steps of: providing a wafer surface; positioning a pad for contact with the wafer surface; and planarizing the wafer surface using the pad and a slurry, the slurry including a dispersant, the dispersant being one of any micellar forming surfactants selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein the dispersant is preferably 1,2-ethylenediphosphonic acid (EDP).
Claim 4
Dependent Claim
64 words
The method according to claim 2, wherein the slurry includes a first slurry component including an abrasive component and a chemically interactive component that interacts with the wafer surface; and further wherein the EDP is a second slurry component of the slurry in an amount in the range of about 0.001 grams to about 20 grams per 5000 ml of the first slurry component.
Claim 5
Dependent Claim
33 words
The method according to claim 3, wherein the amount of EDP is more preferably in the range of about 0.01 grams to about 5 grams per 5000 ml of the first slurry component.
Claim 6
Dependent Claim
20 words
The method according to claim 1, wherein the wafer surface is one of a nonplanar or substantially planar wafer surface.
Claim 7
Dependent Claim
191 words
A planarization method comprising the steps of: providing a wafer surface; positioning a pad for contact with the wafer surface over a contact area of the surface; and planarizing the wafer surface using the pad and a slurry, the slurry including: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface, the slurry component when used alone in a planarization of the wafer surface resulting in a wafer thickness uniformity having a first standard deviation and a first rate of removal of material from the wafer surface; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of an amount sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the wafer surface is performed with the slurry including the slurry component and the dispersant component, the planarization of the wafer surface performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 8
Dependent Claim
191 words
A planarization method comprising the steps of: providing a wafer surface; positioning a pad for contact with the wafer surface over a contact area of the surface; and planarizing the wafer surface using the pad and a slurry, the slurry including: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface, the slurry component when used alone in a planarization of the wafer surface resulting in a wafer thickness uniformity having a first standard deviation and a first rate of removal of material from the wafer surface; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of an amount sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the wafer surface is performed with the slurry including the slurry component and the dispersant component, the planarization of the wafer surface performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 9
Dependent Claim
13 words
The method according to claim 6, wherein the dispersant component is preferable EDP.
Claim 10
Dependent Claim
31 words
The method according to claim 7, wherein the amount of EDP is in the range of about 0.001 grams to about 20 grams per 5000 ml of the first slurry component.
Claim 11
Dependent Claim
31 words
The method according to claim 8, wherein the amount of EDP is in the range of about 0.01 grams to about 5 grams per 5000 ml of the first slurry component.
Claim 12
Dependent Claim
34 words
The method according to claim 6, wherein the slurry is transported to the center of the contact area during the planarization step such that the slurry is substantially uniformly distributed over the contact area.
Claim 13
Dependent Claim
19 words
The method according to claim 6, wherein the wafer surface one of a nonplanar or substantially planar wafer surface.
Claim 14
Dependent Claim
60 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface of the wafer; and a dispersant component including one of any micellar forming surfactants selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 15
Dependent Claim
60 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface of the wafer; and a dispersant component including one of any micellar forming surfactants selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 16
Dependent Claim
13 words
The slurry according to claim 12, wherein the dispersant component is preferably EDP.
Claim 17
Dependent Claim
31 words
The slurry according to claim 13, wherein the EDP is of an amount in the range of about 0.001 grams to about 20 grams per 5000 ml of the slurry component.
Claim 18
Dependent Claim
30 words
The slurry of claim 14, wherein the amount of EDP is preferably in the range of about 0.001 grams to about 5 grams per 5000 ml of the slurry component.
Claim 19
Dependent Claim
161 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface, the slurry component when used alone in a planarization of the surface resulting in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the surface; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the surface is performed with the slurry including the slurry component and the dispersant component, the planarization of the surface performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 20
Dependent Claim
161 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface, the slurry component when used alone in a planarization of the surface resulting in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the surface; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the surface is performed with the slurry including the slurry component and the dispersant component, the planarization of the surface performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 21
Dependent Claim
13 words
The slurry according to claim 16, wherein the dispersant component is preferably EDP.
Claim 22
Dependent Claim
45 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface of the wafer; and a dispersant component wherein the dispersant component is EDP.
Claim 23
Dependent Claim
45 words
A slurry for use in planarization of a surface of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the surface of the wafer; and a dispersant component wherein the dispersant component is EDP.
Claim 24
Dependent Claim
47 words
A planarization method comprising the steps of: providing an oxide layer having a surface; positioning a pad for contact with the surface; and planarizing the oxide layer using the pad and a slurry, the slurry including a dispersant, the dispersant being one of any micellar forming surfactants.
Claim 25
Dependent Claim
47 words
A planarization method comprising the steps of: providing an oxide layer having a surface; positioning a pad for contact with the surface; and planarizing the oxide layer using the pad and a slurry, the slurry including a dispersant, the dispersant being one of any micellar forming surfactants.
Claim 26
Dependent Claim
14 words
The method according to claim 19, wherein the dispersant is preferably 1,2-ethylenediphosphonic acid (EDP).
Claim 27
Dependent Claim
64 words
A slurry for use in planarization of an oxide surface layer of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the oxide surface layer of the wafer; and a dispersant component including one of any micellar forming surfactants selected form diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 28
Dependent Claim
64 words
A slurry for use in planarization of an oxide surface layer of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the oxide surface layer of the wafer; and a dispersant component including one of any micellar forming surfactants selected form diphosphonic acids with 4 or less carbon atoms connecting the acid groups.
Claim 29
Dependent Claim
13 words
The slurry according to claim 21, wherein the dispersant component is preferably EDP.
Claim 30
Dependent Claim
31 words
The slurry according to claim 22, wherein the EDP is of an amount in the range of about 0.001 grams to about 20 grams per 5000 ml of the slurry component.
Claim 31
Dependent Claim
173 words
A slurry for use in planarization of an oxide surface layer of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the oxide surface layer, the slurry component when used alone in a planarization of the oxide surface layer resulting in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the oxide surface layer; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the oxide surface layer is performed with the slurry including the slurry component and the dispersant component, the planarization of the oxide surface layer performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 32
Dependent Claim
173 words
A slurry for use in planarization of an oxide surface layer of a wafer, the slurry comprising: a slurry component including an abrasive component and a chemically interactive component that interacts with the oxide surface layer, the slurry component when used alone in a planarization of the oxide surface layer resulting in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the oxide surface layer; and a dispersant component which is a micellar forming surfactant selected from diphosphonic acids with 4 or less carbon atoms connecting the acid groups of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the oxide surface layer is performed with the slurry including the slurry component and the dispersant component, the planarization of the oxide surface layer performed with the slurry including the slurry component and the dispersant component having a second rate of removal substantially equivalent to the first rate of removal.
Claim 33
Dependent Claim
13 words
The slurry according to claim 24, wherein the dispersant component is preferably EDP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-26 | 2002-04-27 | 2002-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-26 | 2006-04-27 | 2006-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-26 | 2010-04-27 | 2010-10-27 | $7700.00 | Window Closed / Lapsed |