Patent US6133051A successfully refreshed from Google Patents.
US6133051A
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Amorphously deposited metal oxide ceramic films
Assignee: Polaris Innovations Ltd
•
Filing: 1998-06-30
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Granted: 2000-10-17
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Expires: 2018-06-30
Abstract
Abstract A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.
Inventors
- 👤 Frank S. Hintermaier
- 👤 Bryan C. Hendrix
- 👤 Jeffrey F. Roeder
- 👤 Debra A. Desrochers
- 👤 Thomas H. Baum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:17
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/16; C04B35/18; C04B35/495; C04B35/497; C04B35/515; C04B35/58; C04B35/58007; C04B35/58085; C04B35/58092; C04B35/584; C04B35/622; C04B35/62222; C04B35/64; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C23C16/56; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6544; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/32; C04B2235/3231; C04B2235/3251; C04B2235/3296; C04B2235/3298; C04B2235/65; C04B2235/66; C04B2235/661; C04B2235/662; C04B2235/663; C04B2235/70; C04B2235/74; C04B2235/76; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
44 words
A method for forming a metal oxide ceramic layer capable of being transformed into a ferroelectric material, comprising the steps of: depositing the metal oxide ceramic layer in substantially amorphous form by chemical vapor deposition; and annealing the substantially amorphous metal oxide ceramic layer.
Claim 2
Independent Claim
44 words
A method for forming a metal oxide ceramic layer capable of being transformed into a ferroelectric material, comprising the steps of: depositing the metal oxide ceramic layer in substantially amorphous form by chemical vapor deposition; and annealing the substantially amorphous metal oxide ceramic layer.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the metal oxide ceramic layer comprises bismuth.
Claim 4
Dependent Claim
24 words
The method of claim 2, wherein the metal oxide ceramic layer is capable of being transformed into a ferroelectric layer by the annealing step.
Claim 5
Dependent Claim
15 words
The method of claim 3, wherein the metal oxide ceramic further comprises strontium and tantalum.
Claim 6
Independent Claim
42 words
A method of forming a ferroelectric thin film comprising the steps of: depositing a substantially amorphous metal oxide ceramic layer by chemical vapor deposition; and annealing the substantially amorphous metal oxide ceramic layer under appropriate conditions to form the ferroelectric thin film.
Claim 7
Independent Claim
42 words
A method of forming a ferroelectric thin film comprising the steps of: depositing a substantially amorphous metal oxide ceramic layer by chemical vapor deposition; and annealing the substantially amorphous metal oxide ceramic layer under appropriate conditions to form the ferroelectric thin film.
Claim 8
Dependent Claim
19 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is substantially free of fluorite phase.
Claim 9
Dependent Claim
13 words
The method of claim 5, wherein the metal oxide ceramic layer comprises bismuth.
Claim 10
Dependent Claim
14 words
The method of claim 7, wherein the metal oxide ceramic layer further comprises niobium.
Claim 11
Dependent Claim
14 words
The method of claim 7, wherein the metal oxide ceramic layer further comprises titanium.
Claim 12
Dependent Claim
14 words
The method of claim 7, wherein the metal oxide ceramic layer further comprises strontium.
Claim 13
Dependent Claim
14 words
The method of claim 10, wherein the metal oxide ceramic layer further comprises tantalum.
Claim 14
Dependent Claim
14 words
The method of claim 11, wherein the metal oxide ceramic layer further comprises niobium.
Claim 15
Dependent Claim
14 words
The method of claim 7, wherein the metal oxide ceramic layer further comprises tantalum.
Claim 16
Dependent Claim
17 words
The method of claim 5 wherein the substantially amorphous metal oxide ceramic layer comprises strontium bismuth tantalate.
Claim 17
Dependent Claim
19 words
The method of claim 5, wherein the substantially amorphous metal oxide layer is deposited on a first conductive material.
Claim 18
Dependent Claim
15 words
The method of claim 15 wherein the conductive material further comprises a conductive barrier layer.
Claim 19
Dependent Claim
19 words
The method of claim 15 wherein the first conductive material serves as a bottom electrode of a capacitor structure.
Claim 20
Dependent Claim
13 words
The method of claim 17, wherein the bottom electrode comprises a noble metal.
Claim 21
Dependent Claim
25 words
The method of claim 17 wherein the bottom electrode comprises a noble metal selected from the group consisting of: Pt, Pd, Au, Ir, and Rh.
Claim 22
Dependent Claim
14 words
The method of claim 17, wherein the bottom electrode comprises a conducting metal oxide.
Claim 23
Dependent Claim
48 words
The method of claim 17, wherein the bottom electrode comprises a conducting metal oxide selected from the group consisting of: IrO x RhO x , RuO x , OsO x , ReO x , WO x , wherein x is greater than 0 and less than about 2.
Claim 24
Dependent Claim
14 words
The method of claim 17, wherein the bottom electrode comprises a conducting metal nitride.
Claim 25
Dependent Claim
37 words
The method of claim 17, wherein the bottom electrode comprises a conducting metal nitride selected from the group consisting of TiN x and ZrN x , wherein x is greater than 0 and less than about 1.1.
Claim 26
Dependent Claim
37 words
The method of claim 17, wherein the bottom electrode comprises a conducting metal nitride selected from the group consisting of: WN x and TaN x , wherein x is greater than 0 and less than about 1.7.
Claim 27
Dependent Claim
15 words
The method of claim 17, wherein the bottom electrode comprises a super conducting metal oxide.
Claim 28
Dependent Claim
38 words
The method of claim 17, wherein the bottom electrode comprises a super conducting oxide selected from the group consisting of YBa 2 Cu 2 O 7-x and Bi 2 Sr 2 Ca 2 Cu 2 O 10 .
Claim 29
Dependent Claim
17 words
The method of claim 5, wherein a second conductive layer is deposited over the ferroelectric thin film.
Claim 30
Dependent Claim
12 words
The method of claim 27, wherein the second conductive layer is platinum.
Claim 31
Dependent Claim
19 words
The method of claim 27, wherein the second conductive material serves as a top electrode of a capacitor structure.
Claim 32
Dependent Claim
19 words
The method of claim 5, wherein the ferroelectric thin film comprises an Aurivillius phase having a layered perovskite structure.
Claim 33
Dependent Claim
12 words
The method of claim 30, wherein the ferroelectric thin film comprises bismuth.
Claim 34
Dependent Claim
15 words
The method of claim 5, wherein the ferroelectric thin film comprises a layered perovskite structure.
Claim 35
Dependent Claim
22 words
The method of claim 32, wherein the ferroelectric thin film is expressed by the formula SrBi 2 Ta 2 O 9 .
Claim 36
Dependent Claim
15 words
The method of claim 32, wherein the ferroelectric thin film is a derivative of SBT.
Claim 37
Dependent Claim
175 words
The method of claim 32, wherein the ferroelectric thin film is selected from the group consisting of: SrBi 2 Ta 2-x Nb x O 9 , wherein x is greater than 0 and less than 2; SrBi 2 Nb 2 O 9 ; Sr 1-x Ba x Bi 2 Ta 2-y Nb y O 0 wherein x is greater than 0 and less than i and y is greater than 0 and less than2; Sr 1-x Ca x Bi 2 Ta 2-y Nb y O 9 is greater than 0 and less than 1 and y is greater than 0 and less than 2; Sr 1-x Pb x Bi 2 Ta 2-y Nb y O 9 , wherein x is greater than 0 and less than 1 and y is greater than 0 and less than 2; and Sr a Ba b Ca c Pb 1-a-b-c Bi 2 Ta x Nb 2-x O 9 , wherein a+b+c is greater than 0 and less than 1 and x is greater than 0 and less than 2.
Claim 38
Dependent Claim
102 words
The method of claim 32, wherein the ferroelectric thin film is expressed by the formula: (Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2- wherein A is selected from the group consisting of: Bi 3+ , L 3+ , L +2 , Ca 2+ , Sr 2+ , Ba 2+ , Pb 2+ and Na + ; B is selected from the group consisting of: Fe 3+ , Al 3+ , Sc 3+ , Y 3+ , Ti 4+ , Nb 5+ , Ta 5+ , W 5+ , Mo 6+ and Lanthanide metals and m is selected from the group consisting of 1 to 5.
Claim 39
Dependent Claim
9 words
The method of claim 36, wherein B is Ta.
Claim 40
Dependent Claim
9 words
The method of claim 37 wherein A is Sr.
Claim 41
Dependent Claim
9 words
The method of claim 36, wherein B is titanium.
Claim 42
Dependent Claim
21 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is deposited by liquid delivery chemical vapor deposition.
Claim 43
Dependent Claim
18 words
The method of claim 40, wherein the substantially amorphous metal oxide ceramic layer is deposited from organometallic precursors.
Claim 44
Dependent Claim
18 words
The method of claim 41, wherein the substantially amorphous metal oxide ceramic layer comprises bismuth, strontium and tantalum.
Claim 45
Dependent Claim
26 words
The method of claim 41, wherein the substantially amorphous metal oxide ceramic layer is deposited from Bi(thd) 3 , Sr(thd) 2 (pentamethyldiethylenetriamine) and Ta(thd)(OiPr) 4 .
Claim 46
Dependent Claim
22 words
The method of claim 43, wherein the organometallic precursors are dissolved in a solvent system comprising octane:decane:pentamethyldiethylenetriamine in a 5:4:1 volumetric ratio.
Claim 47
Dependent Claim
22 words
The method of claim 40, wherein the substantially amorphous metal oxide ceramic layer is deposited from one or more organometallic precursor solutions.
Claim 48
Dependent Claim
16 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a Bi precursor.
Claim 49
Dependent Claim
15 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a Bi(β-diketonate).
Claim 50
Dependent Claim
16 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises Bi(thd) 3 .
Claim 51
Dependent Claim
31 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a bismuth precursor selected from the group consisting of: bismuth alcoxides, bismuth carboxylates, bismuth amides, and Bi aryls.
Claim 52
Dependent Claim
14 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises Sr(β-diketonate).
Claim 53
Dependent Claim
28 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a Sr precursor selected from the group consisting of, Sr(thd) 2 and Sr(thd) 2 (adduct).
Claim 54
Dependent Claim
29 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a Sr precursor selected from the group consisting of, Sr(thd) 2 (pentamethyldiethylenetriamine) and Sr(thd) 2 (tetraglyme).
Claim 55
Dependent Claim
16 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a tantalum precursor.
Claim 56
Dependent Claim
14 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises Ta(β-diketonate).
Claim 57
Dependent Claim
24 words
The method of claim 45, wherein one of the organometallic precursor solutions comprises a tantalum precursor having the general formula Ta(β-diketonate), (alcoxide) 5-x .
Claim 58
Dependent Claim
13 words
The method of claim 54, wherein the tantalum precursor is Ta(thd)(OiPr) 4 .
Claim 59
Dependent Claim
24 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is deposited at a temperature between 280° C. and 450° C.
Claim 60
Dependent Claim
22 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is deposited at a temperature of about 380° C.
Claim 61
Dependent Claim
24 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is deposited at a deposition pressure between 0.1 and 760 Torr.
Claim 62
Dependent Claim
24 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is deposited at a deposition pressure between 8 and 10 Torr.
Claim 63
Dependent Claim
25 words
The method of claim 5, wherein the substantially amorphous metal oxide ceramic layer is annealed at a temperature between 600-830° C. for about 1-60 minutes.
Claim 64
Dependent Claim
14 words
A capacitor comprising a ferroelectric thin film formed by the method of claim 5.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |