US6130139A
Expired / Lapsed
US
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Method of manufacturing trench-isolated semiconductor device
Assignee: Godo Kaisha IP Bridge 1
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Filing: 1997-11-25
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Granted: 2000-10-10
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Expires: 2017-11-25
Abstract
Abstract The top surface of a P-type semiconductor substrate is partitioned into an active region to be formed with an element and an isolation region surrounding the active region. The isolation region is composed of trench portions and dummy semiconductor portions. An interlayer insulating film is deposited on the substrate, followed by a wire formed thereon. In each of the semiconductor portions, an impurity diffusion layer is formed simultaneously with the implantation of ions into the element so that a PN junction is formed between the impurity diffusion layer and the silicon substrate. A capacitance component of the wiring-to-substrate capacitance in the region containing the semiconductor portions is obtained by adding in series the capacitance in the impurity diffusion layer to the capacitance in the interlayer insulating film, which is smaller than the capacitance only in the inter layer insulating film. What results is a semiconductor device having lower total wiring to-substrate capacitance and a higher operating speed.
Inventors
- 👤 Takaaki Ukeda
- 👤 Chiaki Kudo
- 👤 Toshiki Yabu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:37
CPC Classifications
H; H10; H10W; H10W10/00; H10W20/00; H10W20/40; H10W20/495; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
165 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region of a first conductivity type, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of introducing an impurity containing at least an impurity of a second conductivity type into said dummy semiconductor portions of said isolation region to form at least one PN junction in said dummy semiconductor portions; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 2
Independent Claim
165 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region of a first conductivity type, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of introducing an impurity containing at least an impurity of a second conductivity type into said dummy semiconductor portions of said isolation region to form at least one PN junction in said dummy semiconductor portions; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 3
Dependent Claim
70 words
A method of manufacturing a semiconductor device according to claim 1, wherein said third and fourth steps include forming a gate electrode of a FET as said element on said active region, introducing the impurity of the second conductivity type into said active region and said dummy semiconductor portions, and thereby forming source/drain regions of said FET, while forming said at least one PN junction in said dummy semiconductor portions.
Claim 4
Dependent Claim
104 words
A method of manufacturing a semiconductor device according to claim 1, wherein said third step includes forming a gate electrode of a FET as said element on said active region by using a first mask covering said isolation region and introducing the impurity of the second conductivity type into said active region to form source/drain regions of said FET and said fourth step includes introducing the impurity containing at least the impurity of the second conductivity type into said dummy semiconductor portions by using a second mask covering said active region to form said at least one PN junction in said dummy semiconductor portions.
Claim 5
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of forming a resistor film on each of said dummy semiconductor portions of said isolation region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 6
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of forming a resistor film on each of said dummy semiconductor portions of said isolation region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 7
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 4, wherein said fourth step includes composing said resistor film of a film containing at least one of polysilicon and amorphous silicon.
Claim 8
Dependent Claim
39 words
A method of manufacturing a semiconductor device according to claim 4, wherein said fourth step includes composing said resistor film of a multilayer film constituted by two or more conductor films with at least an insulating film interposed therebetween.
Claim 9
Dependent Claim
33 words
A method of manufacturing a semiconductor device according to claim 4, wherein said fourth step includes introducing an impurity at a concentration of 1×10 20 atoms·cm -3 or lower into said resistor film.
Claim 10
Independent Claim
146 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of implanting ions into an upper portion of each of said dummy semiconductor portions to form a high resistor portion therein; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 11
Independent Claim
146 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of implanting ions into an upper portion of each of said dummy semiconductor portions to form a high resistor portion therein; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 12
Dependent Claim
33 words
A method of manufacturing a semiconductor device according to claim 8, wherein said fourth step includes implanting ions containing at least an atom having an oxidizing function to form said high resistor portion.
Claim 13
Dependent Claim
33 words
A method of manufacturing a semiconductor device according to claim 8, wherein said fourth step includes implanting ions containing at least an atom having a nitriding function to form said high resistor portion.
Claim 14
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of forming an underlying insulating film over said dummy semiconductor portions of said isolation region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 15
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming an element on said active region; a fourth step of forming an underlying insulating film over said dummy semiconductor portions of said isolation region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 16
Dependent Claim
81 words
A method of manufacturing a semiconductor device according to claim 11, wherein said third step and said fourth step include forming a gate electrode of a FET forming said element on said active region, depositing a dielectric film on the substrate, performing anisotropic etching with respect to the dielectric film by using a mask covering said isolation region, and thereby leaving sidewalls on both side faces of said gate electrode, while leaving said underlying insulating film over said dummy semiconductor portions.
Claim 17
Dependent Claim
30 words
A method of manufacturing a semiconductor device according to claim 11, wherein said fourth step includes forming said underlying insulating film of a dielectric film containing at least silicon oxide.
Claim 18
Dependent Claim
30 words
A method of manufacturing a semiconductor device according to claim 11, wherein said fourth step includes forming said underlying insulating film of a dielectric film containing at least silicon nitride.
Claim 19
Independent Claim
170 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming depressed portions by etching said dummy semiconductor portions and filling an insulating material in said depressed portions to form inter-trench insulating films each having a top face at the same level as respective top faces of said first and second buried trench portions; a fourth step of forming an element on said active region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 20
Independent Claim
170 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming depressed portions by etching said dummy semiconductor portions and filling an insulating material in said depressed portions to form inter-trench insulating films each having a top face at the same level as respective top faces of said first and second buried trench portions; a fourth step of forming an element on said active region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 21
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 15, wherein said fourth step includes forming each of said inter-trench insulating films of a dielectric film containing at least silicon oxide.
Claim 22
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 15, wherein said fourth step includes forming each of said inter-trench insulating films of a dielectric film containing at least silicon nitride.
Claim 23
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of implanting oxygen ions into each of said dummy semiconductor portions with said active region being covered by a mask to form a buried insulating film in an inner portion thereof; a fourth step of forming an element on said active region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 24
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of implanting oxygen ions into each of said dummy semiconductor portions with said active region being covered by a mask to form a buried insulating film in an inner portion thereof; a fourth step of forming an element on said active region; a fifth step of forming an interlayer insulating film over an entire surface of the substrate; and a sixth step of forming a wire on said interlayer insulating film.
Claim 25
Independent Claim
195 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming third trenches by etching said semiconductor portions and filling an insulating material in said third trenches to form buried, insulating films each having a top face at a level lower than respective top faces of said first and second buried trench portions; a fourth step of growing semiconductor films on said buried insulating films, with said active region covered with a mask member, to form dummy semiconductor portions; a fifth step of forming an element on said active region; a sixth step of forming an interlayer insulating film over an entire surface of the substrate; and a seventh step of forming a wire on said interlayer insulating film.
Claim 26
Independent Claim
195 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench for partitioning said substrate region into an active region and an isolation region and a second trench for partitioning said isolation region into a plurality of dummy semiconductor portions; a second step of filling an insulating material in each of said first and second trenches to form a first buried trench portion and a second buried trench portion; a third step of forming third trenches by etching said semiconductor portions and filling an insulating material in said third trenches to form buried, insulating films each having a top face at a level lower than respective top faces of said first and second buried trench portions; a fourth step of growing semiconductor films on said buried insulating films, with said active region covered with a mask member, to form dummy semiconductor portions; a fifth step of forming an element on said active region; a sixth step of forming an interlayer insulating film over an entire surface of the substrate; and a seventh step of forming a wire on said interlayer insulating film.
Claim 27
Independent Claim
222 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench extending over an entire isolation region of said substrate region, while leaving an active region of said substrate region; a second step of filling an insulating material in said first trench to form a buried insulating film having a top face at the same level as a top face of said isolation region; a third step of growing a semiconductor film over said active region and said buried insulating film; a fourth step of forming, in the semiconductor substrate, a second trench for partitioning said semiconductor film and said substrate region into the active region and the isolation region and a third trench for partitioning the portion of the semiconductor film overlying said isolation region into a plurality of dummy semiconductor portions; a fifth step of filling an insulating material in each of said second and third trenches to form a first buried trench portion and a second buried trench portion; a sixth step of forming an element on the portion of said semiconductor film overlying said active region; a seventh step of forming an interlayer insulating film over an entire surface of the substrate; and an eighth step of forming a wire on said interlayer insulating film.
Claim 28
Independent Claim
222 words
A method of manufacturing a semiconductor device, comprising: a first step of forming, in a semiconductor substrate having a substrate region, a first trench extending over an entire isolation region of said substrate region, while leaving an active region of said substrate region; a second step of filling an insulating material in said first trench to form a buried insulating film having a top face at the same level as a top face of said isolation region; a third step of growing a semiconductor film over said active region and said buried insulating film; a fourth step of forming, in the semiconductor substrate, a second trench for partitioning said semiconductor film and said substrate region into the active region and the isolation region and a third trench for partitioning the portion of the semiconductor film overlying said isolation region into a plurality of dummy semiconductor portions; a fifth step of filling an insulating material in each of said second and third trenches to form a first buried trench portion and a second buried trench portion; a sixth step of forming an element on the portion of said semiconductor film overlying said active region; a seventh step of forming an interlayer insulating film over an entire surface of the substrate; and an eighth step of forming a wire on said interlayer insulating film.
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