Patent US6114259A successfully refreshed from Google Patents.
US6114259A
Expired / Lapsed
US
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Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
Assignee: Bell Semiconductor LLC
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Filing: 1999-07-27
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Granted: 2000-09-05
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Expires: 2019-07-27
Abstract
Abstract A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material in order to protect the low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials is described. The process comprises (a) first treating the exposed surfaces of a low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent the exposed surfaces of low k carbon doped silicon oxide dielectric material and (b) then treating the semiconductor wafer with a mild oxidizing agent capable of removing photoresist materials from the semiconductor wafer. These steps will prevent the degradation of the exposed surfaces of a low k carbon doped silicon oxide dielectric material during removal of an etch mask after formation of vias or contact openings in the low k carbon doped silicon oxide dielectric material.
Inventors
- 👤 Valeriy Sukharev
- 👤 Warren Uesato
- 👤 John Rongxiang Hu
- 👤 Wei-jen Hsia
- 👤 Linggian Qian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6532; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/093; H10W20/096
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
188 words
A method for protecting exposed via sidewall surfaces of a low k carbon doped silicon oxide dielectric material on a semiconductor wafer, in order to protect said exposed surfaces of said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials after etching of said low k carbon doped silicon oxide dielectric material through said photoresist mask to form said vias, which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material to protect said exposed surfaces of low k carbon doped silicon oxide dielectric material during subsequent removal of said photoresist mask materials; and (b) then treating said semiconductor wafer with a mild oxidizing reagent comprising an H 2 O vapor plasma sufficient to remove photoresist mask materials from said semiconductor wafer; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage during said removal of said photoresist mask materials.
Claim 2
Independent Claim
188 words
A method for protecting exposed via sidewall surfaces of a low k carbon doped silicon oxide dielectric material on a semiconductor wafer, in order to protect said exposed surfaces of said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials after etching of said low k carbon doped silicon oxide dielectric material through said photoresist mask to form said vias, which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material to protect said exposed surfaces of low k carbon doped silicon oxide dielectric material during subsequent removal of said photoresist mask materials; and (b) then treating said semiconductor wafer with a mild oxidizing reagent comprising an H 2 O vapor plasma sufficient to remove photoresist mask materials from said semiconductor wafer; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage during said removal of said photoresist mask materials.
Claim 3
Dependent Claim
66 words
The method of claim 1 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with a plasma wherein the source components of said plasma are selected from the group consisting of oxygen, nitrogen, hydrogen, argon, neon, helium, and any combination thereof.
Claim 4
Dependent Claim
62 words
The method of claim 1 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with a nitrogen plasma to form said densified layer on said exposed surfaces of said low k carbon doped silicon oxide dielectric material.
Claim 5
Dependent Claim
57 words
The method of claim 1 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with an inductively coupled plasma at a power range of from about 100 watts to about 800 watts.
Claim 6
Dependent Claim
57 words
The method of claim 1 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with a capacitively coupled plasma at a power range of from about 100 watts to about 800 watts.
Claim 7
Dependent Claim
79 words
The method of claim 1 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material further comprises treating said low k carbon doped silicon oxide dielectric material with said plasma having an ion flux with energy sufficient to form a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material without causing sputtering of said low k carbon doped silicon oxide dielectric material.
Claim 8
Dependent Claim
38 words
The method of claim 1 wherein said densified layer, formed by treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with said plasma, ranges from about 5 nm to about 50 nm in thickness.
Claim 9
Dependent Claim
34 words
The method of claim 1 wherein said H 2 O vapor plasma in said second step comprises a capacitively coupled plasma at a power range of from about 20 watts to about 2000 watts.
Claim 10
Dependent Claim
40 words
The method of claim 1 wherein said mild oxidizing reagent in said second step comprising an H 2 O vapor plasma further comprises one or more additional gases selected from the group consisting of nitrogen, hydrogen, argon, neon, and helium.
Claim 11
Dependent Claim
33 words
The method of claim 1 wherein said second step of treating said semiconductor wafer with a mild oxidizing reagent is carried out at a temperature ranging from about 0° to about 50° C.
Claim 12
Dependent Claim
34 words
The method of claim 1 wherein said second step of treating said semiconductor wafer with a mild oxidizing reagent is carried for a time period ranging from about 40 seconds to about 300 seconds.
Claim 13
Independent Claim
135 words
A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material, on a semiconductor wafer, in order to protect said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist materials which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with a plasma comprising nitrogen, said plasma being capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material; and (b) then treating said semiconductor wafer with a mild oxidizing reagent sufficient to remove photoresist materials from said semiconductor wafer; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage by said removal of said photoresist materials.
Claim 14
Independent Claim
135 words
A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material, on a semiconductor wafer, in order to protect said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist materials which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with a plasma comprising nitrogen, said plasma being capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material; and (b) then treating said semiconductor wafer with a mild oxidizing reagent sufficient to remove photoresist materials from said semiconductor wafer; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage by said removal of said photoresist materials.
Claim 15
Dependent Claim
65 words
The method of claim 12 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with a plasma wherein further source components of said plasma are selected from the group consisting of oxygen, hydrogen, argon, neon, helium, and any combination thereof.
Claim 16
Dependent Claim
57 words
The method of claim 12 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with an inductively coupled plasma at a power range of from about 100 watts to about 800 watts.
Claim 17
Dependent Claim
57 words
The method of claim 12 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said plasma further comprises treating said low k carbon doped silicon oxide dielectric material with a capacitively coupled plasma at a power range of from about 100 watts to about 800 watts.
Claim 18
Dependent Claim
79 words
The method of claim 12 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material further comprises treating said low k carbon doped silicon oxide dielectric material with said plasma having an ion flux with energy sufficient to form a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material without causing sputtering of said low k carbon doped silicon oxide dielectric material.
Claim 19
Dependent Claim
42 words
The method of claim 12 wherein said densified layer, formed in said first step by treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with said plasma, ranges from about 5 nm to about 50 nm in thickness.
Claim 20
Dependent Claim
36 words
The method of claim 12 wherein said low k carbon doped silicon oxide dielectric material comprises a low k carbon doped silicon oxide dielectric material formed by reacting a carbon-substituted silane with a mild oxidizing agent.
Claim 21
Independent Claim
204 words
A method for protecting exposed via sidewall surfaces of a low k carbon doped silicon oxide dielectric material, on a semiconductor wafer, in order to protect said exposed surfaces of said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist materials after etching of said low k carbon doped silicon oxide dielectric material through said photoresist mask to form said vias, which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material in a first step with a nitrogen plasma capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material to protect said exposed surfaces of low k carbon doped silicon oxide dielectric material during subsequent removal of said photoresist mask materials; and (b) then treating said semiconductor wafer in a second step with a mild oxidizing reagent comprising an H 2 O vapor plasma sufficient to remove photoresist materials from said semiconductor wafer without damaging said low k carbon doped silicon oxide dielectric material; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage during said removal of photoresist materials.
Claim 22
Independent Claim
204 words
A method for protecting exposed via sidewall surfaces of a low k carbon doped silicon oxide dielectric material, on a semiconductor wafer, in order to protect said exposed surfaces of said low k carbon doped silicon oxide dielectric material from damage during removal of photoresist materials after etching of said low k carbon doped silicon oxide dielectric material through said photoresist mask to form said vias, which method comprises the steps of: (a) treating said exposed surfaces of low k carbon doped silicon oxide dielectric material in a first step with a nitrogen plasma capable of forming a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material to protect said exposed surfaces of low k carbon doped silicon oxide dielectric material during subsequent removal of said photoresist mask materials; and (b) then treating said semiconductor wafer in a second step with a mild oxidizing reagent comprising an H 2 O vapor plasma sufficient to remove photoresist materials from said semiconductor wafer without damaging said low k carbon doped silicon oxide dielectric material; whereby said exposed surfaces of said low k carbon doped silicon oxide dielectric material are protected from damage during said removal of photoresist materials.
Claim 23
Dependent Claim
62 words
The method of claim 19 wherein said first step of treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said nitrogen plasma further comprises optionally treating said low k carbon doped silicon oxide dielectric material with a further plasma source, component selected from the group consisting of oxygen, hydrogen, argon, neon, helium, and any combination thereof.
Claim 24
Dependent Claim
66 words
The method of claim 19 wherein said first step of treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with said plasma having an ion flux with energy sufficient to form a densified layer on and adjacent said exposed surfaces of low k carbon doped silicon oxide dielectric material without causing sputtering of said low k carbon doped silicon oxide dielectric material.
Claim 25
Dependent Claim
40 words
The method of claim 19 wherein said densified layer, formed in said first step by treating said exposed surfaces of low k carbon doped silicon oxide dielectric material with said plasma, ranges from 5 nm to 50 nm in thickness.
Claim 26
Dependent Claim
36 words
The method of claim 19 wherein said low k carbon doped silicon oxide dielectric material comprises a low k carbon doped silicon oxide dielectric material formed by reacting a carbon-substituted silane with a mild oxidizing agent.
Claim 27
Dependent Claim
66 words
The method of claim 3 wherein said densified layer formed in said first step by treating said exposed surfaces of said low k carbon doped silicon oxide dielectric material with said nitrogen plasma further comprises treating said exposed surfaces with a nitrogen plasma wherein further source components of said plasma are selected from the group consisting of oxygen, hydrogen, argon, neon, helium, and any combination thereof.
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