Patent US5271473A successfully refreshed from Google Patents.
US6100140A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of semiconductor device
Assignee: Denso Corp
•
Filing: 1996-07-03
•
Granted: 2000-08-08
•
Expires: 2016-07-03
Abstract
Abstract A manufacturing method of a vertical type MOSFET, which can suppress vaporization of impurity from a semiconductor substrate and prevent variation in carrier density of the channel, is disclosed. The vertical type MOSFET is formed by forming a local oxide film to form a concavity on the element surface, removing the local oxide film by wet-etching technique, forming the gate oxide film at the sidewall of the concavity by thermal oxidation, and forming a gate electrode. Further, a polycrystalline silicon is formed on a back surface of the semiconductor substrate before removing the local oxide film. Accordingly, since the polycrystalline silicon is not removed when removing the local oxide film, vaporization of impurity from the semiconductor substrate is suppressed during the thermal oxidation for forming the gate oxide film, thereby preventing change in the carrier density of the channel.
Inventors
- 👤 Naoto Okabe
- 👤 Tsuyoshi Yamamoto
- 👤 Mitsuhiro Kataoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
197 words
A manufacturing method of a semiconductor device, comprising the steps of: preparing a wafer having a semiconductor substrate of a high impurity concentration and a first conductivity type semiconductor layer of a lower impurity concentration than that of said semiconductor substrate; forming a local oxide film by locally oxidizing a specified region of a main surface of said semiconductor layer of said wafer; forming a second conductivity type body region and a first conductivity type source region by double-diffusion using said local oxide film as a mask, whereby a channel region is defined at a surface of said body region to which a side part of said local oxide film faces; forming a concavity at said main surface of said semiconductor layer by removing said local oxide film; forming an insulated gate structure by thermally oxidizing an inner wall of said concavity including a part to be said channel region to form a gate oxide film and disposing a gate electrode thereon; and after said double-diffusion and prior to said removing of said local oxide film, covering a back surface side of said semiconductor substrate with a material film unremovable when said local oxide film is removed.
Claim 2
Dependent Claim
197 words
A manufacturing method of a semiconductor device, comprising the steps of: preparing a wafer having a semiconductor substrate of a high impurity concentration and a first conductivity type semiconductor layer of a lower impurity concentration than that of said semiconductor substrate; forming a local oxide film by locally oxidizing a specified region of a main surface of said semiconductor layer of said wafer; forming a second conductivity type body region and a first conductivity type source region by double-diffusion using said local oxide film as a mask, whereby a channel region is defined at a surface of said body region to which a side part of said local oxide film faces; forming a concavity at said main surface of said semiconductor layer by removing said local oxide film; forming an insulated gate structure by thermally oxidizing an inner wall of said concavity including a part to be said channel region to form a gate oxide film and disposing a gate electrode thereon; and after said double-diffusion and prior to said removing of said local oxide film, covering a back surface side of said semiconductor substrate with a material film unremovable when said local oxide film is removed.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein said covering step includes covering said back surface side of said semiconductor substrate with polycrystalline silicon or silicon nitride as said material film.
Claim 4
Dependent Claim
36 words
A method according to claim 1, further comprising the steps of: exposing said semiconductor substrate from said back surface side thereof by removing said material film; and forming a drain electrode on said exposed semiconductor substrate.
Claim 5
Dependent Claim
16 words
A method according to claim 1, w herein said source region is formed by using antimony.
Claim 6
Dependent Claim
207 words
A manufacturing method of a semiconductor device, comprising the steps of: preparing a wafer having a semiconductor substrate of a high impurity concentration and a first conductivity type semiconductor layer of a lower impurity concentration than that of said semiconductor substrate; forming a local oxide film by locally oxidizing a specified region of a main surface of said semiconductor layer of said wafer; forming a second conductivity type body region and a first conductivity type source region by double-diffusion using said local oxide film as a mask, whereby a channel region is defined at a surface of said body region to which a side part of said local oxide film faces; forming a concavity at said main surface of said semiconductor layer by removing said local oxide film; forming an insulated gate structure by thermally oxidizing an inner wall of said concavity including a part to be said channel region to form a gate oxide film and disposing a gate electrode thereon; and after said double-diffusion and prior to said removing of said local oxide film, forming at a back surface side of said semiconductor substrate a film capable of preventing an impurity vaporization from said back surface side of said semiconductor substrate during said thermal oxidation.
Claim 7
Dependent Claim
207 words
A manufacturing method of a semiconductor device, comprising the steps of: preparing a wafer having a semiconductor substrate of a high impurity concentration and a first conductivity type semiconductor layer of a lower impurity concentration than that of said semiconductor substrate; forming a local oxide film by locally oxidizing a specified region of a main surface of said semiconductor layer of said wafer; forming a second conductivity type body region and a first conductivity type source region by double-diffusion using said local oxide film as a mask, whereby a channel region is defined at a surface of said body region to which a side part of said local oxide film faces; forming a concavity at said main surface of said semiconductor layer by removing said local oxide film; forming an insulated gate structure by thermally oxidizing an inner wall of said concavity including a part to be said channel region to form a gate oxide film and disposing a gate electrode thereon; and after said double-diffusion and prior to said removing of said local oxide film, forming at a back surface side of said semiconductor substrate a film capable of preventing an impurity vaporization from said back surface side of said semiconductor substrate during said thermal oxidation.
Claim 8
Dependent Claim
36 words
A method according to claim 5, further comprising the steps of: exposing said semiconductor substrate from s aid back surface side thereof by removing said film; and forming a drain electrode on said exposed semiconductor substrate.
Claim 9
Dependent Claim
16 words
A method according to claim 5, w herein said source region is formed by using antimony.
Claim 10
Dependent Claim
115 words
A manufacturing method of a semiconductor device, comprising the steps of: defining a channel region by disposing, on a semiconductor substrate having a first conductivity type semiconductor layer of low impurity concentration, a second conductivity type body region and a first conductivity type source region, a back surface of the semiconductor substrate having a high impurity concentration; after defining the channel region, covering the back surface of said semiconductor substrate with masking material; after covering the back surface, forming a gate insulating film by oxidizing a surface of said channel region; and after forming the gate insulating film, disposing a gate electrode at least over said channel region with said gate insulating film interposed therebetween.
Claim 11
Dependent Claim
115 words
A manufacturing method of a semiconductor device, comprising the steps of: defining a channel region by disposing, on a semiconductor substrate having a first conductivity type semiconductor layer of low impurity concentration, a second conductivity type body region and a first conductivity type source region, a back surface of the semiconductor substrate having a high impurity concentration; after defining the channel region, covering the back surface of said semiconductor substrate with masking material; after covering the back surface, forming a gate insulating film by oxidizing a surface of said channel region; and after forming the gate insulating film, disposing a gate electrode at least over said channel region with said gate insulating film interposed therebetween.
Claim 12
Dependent Claim
26 words
A method according to claim 8, further comprising a step of removing said masking material at least after said step of forming a gate insulating film.
Claim 13
Dependent Claim
32 words
A method according to claim 9, wherein said step of removing said masking material includes grinding a side of said back surface of said semiconductor substrate to thereby expose said semiconductor substrate.
Claim 14
Dependent Claim
23 words
A method according to claim 10, further comprising a step of forming a drain electrode on said ground surface of said semiconductor substrate.
Claim 15
Dependent Claim
99 words
A method according to claim 8, wherein said step of defining said channel region includes the steps of: preparing a wafer having said semiconductor substrate and said semiconductor layer disposed on said semiconductor substrate; forming a local oxide film by locally oxidizing a specified region of a main surface of said semiconductor layer of said wafer; and forming said body region and said source region by double-diffusion using said local oxide film as a mask, whereby said channel region is defined at a surface of said body region to which a side part of said local oxide film faces.
Claim 16
Dependent Claim
52 words
A method according to claim 12, wherein said step of forming said gate insulating film includes the steps of: forming a concavity at said main surface of said semiconductor layer by removing said local oxide film; and thermally oxidizing an inner wall of said concavity to thereby form said gate insulating film.
Claim 17
Dependent Claim
47 words
A method according to claim 13, wherein said step of covering said back surface of said semiconductor substrate includes the steps of: depositing on said wafer said masking material; and selectively removing said masking material deposited over said main surface of said semiconductor layer of said wafer.
Claim 18
Dependent Claim
17 words
A method according to claim 14, wherein said selectively removing step includes performing a reactive ion etching.
Claim 19
Dependent Claim
21 words
A method according to claim 13, wherein said masking material comprises a material unremovable when said local oxide film is removed.
Claim 20
Dependent Claim
16 words
A method according to claim 16, wherein said masking material comprises polycrystalline silicon or silicon nitride.
Claim 21
Dependent Claim
15 words
A method according to claim 8, wherein said source region is formed by using antimony.
Claim 22
Dependent Claim
15 words
A method according to claim 12, wherein said source region is formed by using antimony.
References Cited (Backward Citations)
US3494809A
Cited
US4053335A
Cited
US4417385A
Cited
JPS6212167A
Cited
US5342797A
Cited
EP0373723A1
Cited
US5242862A
Cited
WO1993003502A1
Cited
EP0550770A1
Cited
US5460985A
Cited
US5296385A
Cited
US5360748A
Cited
US5470770A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |