Method of manufacturing a semiconductor device

Claim 1

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a semiconductor substrate having a first primary surface on which the semiconductor device is to be formed and a second primary surface opposite from the first primary surface, the substrate receiving contaminants therein during device manufacture; forming a separate boron-doped layer on the second primary surface of the substrate; and gettering the contaminants into the boron-doped layer.

Claim 2

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a semiconductor substrate having a first primary surface on which the semiconductor device is to be formed and a second primary surface opposite from the first primary surface, the substrate receiving contaminants therein during device manufacture; forming a separate boron-doped layer on the second primary surface of the substrate; and gettering the contaminants into the boron-doped layer.

Claim 5

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a semiconductor substrate having a first primary surface on which the semiconductor device is to be formed and a second primary surface opposite from the first primary surface, the substrate receiving contaminants therein during device manufacture; forming a separate semiconductor layer containing boron on the second primary surface of the substrate; and forming the semiconductor device using at least one thermal process during which heat is applied to the substrate, thereby causing gettering of the contaminants from the substrate into the semiconductor layer containing boron.

Claim 6

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a semiconductor substrate having a first primary surface on which the semiconductor device is to be formed and a second primary surface opposite from the first primary surface, the substrate receiving contaminants therein during device manufacture; forming a separate semiconductor layer containing boron on the second primary surface of the substrate; and forming the semiconductor device using at least one thermal process during which heat is applied to the substrate, thereby causing gettering of the contaminants from the substrate into the semiconductor layer containing boron.

Claim 9

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a first semiconductor substrate having a first primary surface and a second primary surface opposite from the first primary surface; forming a first separate semiconductor layer containing boron on the first primary surface and a second separate semiconductor layer containing boron on the second primary surface of the substrate; providing a second substrate having a first primary surface and a second primary surface directly in contact with the first primary surface of the first substrate, the first primary surface of the second substrate being designated the surface on which the semiconductor device is to be formed; forming the semiconductor device using process steps including a thermal process to at least the second substrate; and gettering contaminants into the first and second boron containing semiconductor layers using the thermal process during forming the semiconductor device.

Claim 10

A method of manufacturing a semiconductor device, said method comprising the steps of: providing a first semiconductor substrate having a first primary surface and a second primary surface opposite from the first primary surface; forming a first separate semiconductor layer containing boron on the first primary surface and a second separate semiconductor layer containing boron on the second primary surface of the substrate; providing a second substrate having a first primary surface and a second primary surface directly in contact with the first primary surface of the first substrate, the first primary surface of the second substrate being designated the surface on which the semiconductor device is to be formed; forming the semiconductor device using process steps including a thermal process to at least the second substrate; and gettering contaminants into the first and second boron containing semiconductor layers using the thermal process during forming the semiconductor device.

Claim 13

A method of manufacturing a semiconductor device and comprising the steps of: providing a semiconductor substrate having opposite first and second primary surfaces; forming a separate boron-doped layer on one of the first and second surfaces of the substrate; and forming the semiconductor device using steps including a thermal process satisfying an upper region of a curve formed by plotting (X, Y)-(600, 104), (700, 42), (800, 21), (900, 10) and (1000, 6), where X is a thermal process temperature in degrees Centigrade and Y is the thermal process time in minutes.

Claim 14

A method of manufacturing a semiconductor device and comprising the steps of: providing a semiconductor substrate having opposite first and second primary surfaces; forming a separate boron-doped layer on one of the first and second surfaces of the substrate; and forming the semiconductor device using steps including a thermal process satisfying an upper region of a curve formed by plotting (X, Y)-(600, 104), (700, 42), (800, 21), (900, 10) and (1000, 6), where X is a thermal process temperature in degrees Centigrade and Y is the thermal process time in minutes.