Patent US6096597A successfully refreshed from Google Patents.
US6096597A
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Method for fabricating an integrated circuit structure
Assignee: Texas Instruments Inc
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Filing: 1998-01-28
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Granted: 2000-08-01
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Expires: 2018-01-28
Abstract
Abstract In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device.
Inventors
- 👤 Robert Tsu
- 👤 William R. McKee
- 👤 Shimpei Iijima
- 👤 Isamu Asano
- 👤 Masato Kunitomo
- 👤 Tsuyoshi Tamaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/01; H10D1/041; H10D1/042; H10D1/682; H10D1/692; H10D1/711
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
59 words
A method of forming an integrated circuit capacitor, the method comprising the steps of: forming a storage node electrode; depositing a dielectric layer over the storage node electrode; performing an O 2 plasma anneal after depositing the dielectric layer; performing an ozone anneal after performing the O 2 plasma anneal; and depositing a top electrode over the dielectric layer.
Claim 2
Independent Claim
59 words
A method of forming an integrated circuit capacitor, the method comprising the steps of: forming a storage node electrode; depositing a dielectric layer over the storage node electrode; performing an O 2 plasma anneal after depositing the dielectric layer; performing an ozone anneal after performing the O 2 plasma anneal; and depositing a top electrode over the dielectric layer.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the step of forming a storage node electrode comprises forming a silicon storage node electrode.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the step of forming a storage node electrode comprises forming a metal storage node electrode.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein the step of forming a storage node electrode comprises forming a ceramic storage node electrode.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a tantalum pentoxide layer.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a lead zirconium titanate layer.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a barium strontium titanate layer.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a strontium titanate layer.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a high dielectric constant material.
Claim 11
Dependent Claim
23 words
The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a dielectric derived from a material organic source.
Claim 12
Dependent Claim
19 words
The method of claim 1 wherein the ozone anneal is performed in the presence of ultra violet light irradiation.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein the ozone anneal is performed without ultra violet light irradiation.
Claim 14
Dependent Claim
24 words
The method of claim 1 and further comprising the step of performing a crystallization anneal prior to the step of performing an ozone anneal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-01 | 2004-01-31 | 2004-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-01 | 2008-01-31 | 2008-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-01 | 2012-01-31 | 2012-08-01 | $7700.00 | Window Closed / Lapsed |