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US6091144A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor package

Assignee: Renesas Electronics Corp
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Filing: 1997-02-03
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Granted: 2000-07-18
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Expires: 2017-02-03
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Abstract

Abstract A semiconductor package in which a semiconductor chip 16 is formed above a die pad 12 interposing a capacitor 22 therebetween, or the semiconductor chip 16 and the capacitor 22 in a vortex-shaped form are respectively formed on both faces of the die pad 12, or the condensers 22 are formed on both faces of the die pad 12 and the semiconductor chip 16 is formed on one of the condensers 22, and the die pad 12, the semiconductor chip 16 and the condensers 22 are sealed by resin by which adverse effect of noise is reduced, wherein the shape of the capacitor may be in a vortex-shaped form or opposed faces of metal layers may be roughened.

Inventors

  • 👤 Hisashi Harada

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 17:29
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/475; H10W72/00; H10W72/30; H10W72/351; H10W72/353; H10W72/354; H10W72/50; H10W72/541; H10W72/5449; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S257/00; Y10S257/924

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 65 words
A semiconductor package comprising: a die pad; a first capacitor adhered on a first face of the die pad; a semiconductor chip die-bonded on the first capacitor in the spiral-shaped form; and a second capacitor adhered on a second face of the die pad, wherein the semiconductor chip, the first capacitor and the second capacitor are connected to leads and sealed in the same package.
Claim 2
Dependent Claim 65 words
A semiconductor package comprising: a die pad; a first capacitor adhered on a first face of the die pad; a semiconductor chip die-bonded on the first capacitor in the spiral-shaped form; and a second capacitor adhered on a second face of the die pad, wherein the semiconductor chip, the first capacitor and the second capacitor are connected to leads and sealed in the same package.
Claim 3
Dependent Claim 50 words
A semiconductor package according to claim 1, wherein the second capacitor comprises: a metal layer for power supply; a metal layer for grounding; and a dielectric body formed between the metal layer for a power supply and the metal layer for grounding, wherein the second capacitor has a spiral shape.
Claim 4
Dependent Claim 33 words
A semiconductor package according to claim 2, wherein the second capacitor is formed by rolling and flattening the metal layer for power source, the metal layer for grounding, and the dielectric body together.
Claim 5
Dependent Claim 41 words
A semiconductor package comprising: a semiconductor chip; and a capacitor including opposing electrodes, with at least one surface of said opposing electrodes being roughened; wherein the semiconductor chip and the capacitor are connected to leads and sealed in the same package.
Claim 6
Dependent Claim 41 words
A semiconductor package comprising: a semiconductor chip; and a capacitor including opposing electrodes, with at least one surface of said opposing electrodes being roughened; wherein the semiconductor chip and the capacitor are connected to leads and sealed in the same package.
Claim 7
Dependent Claim 34 words
A semiconductor package according to claim 4, wherein the semiconductor package comprises a die pad, the capacitor adhered onto a first face of the die pad and the semiconductor chip die-bonded onto the capacitor.
Claim 8
Dependent Claim 39 words
A semiconductor package according to claim 4, wherein the semiconductor package comprises a die pad, the semiconductor chip die-bonded onto a first face of the die pad and the capacitor adhered onto a second face of the die pad.
Claim 9
Dependent Claim 69 words
A semiconductor package according to claim 4, wherein the semiconductor package comprises a die pad, a capacitor in a spiral-shaped form adhered onto a first face of the die pad, the semiconductor chip die-bonded onto the capacitor in the spiral-shaped form and, the capacitor including opposing electrodes with at least one surface of said opposing electrodes being roughened, which is adhered onto a second face of the die pad.
Claim 10
Dependent Claim 66 words
A semiconductor package according to claim 4, wherein the capacitor comprises a metal layer for a power source; a metal layer for grounding; and a dielectric body formed between the metal layer for a power supply and a layer for grounding, and wherein faces of the metal layer for a power supply and the metal layer for grounding, which are opposed to each other, are roughened.
Claim 11
Dependent Claim 118 words
A semiconductor package according to claim 7, wherein the capacitor in a vortex-shaped form comprises: a first metal layer for a power source; a first metal layer for grounding; and a first dielectric body formed between the first metal layer for a power supply and the first metal layer for grounding, wherein the capacitor comprises: a second metal layer for a power source; a second metal layer for grounding; and a second dielectric body formed between the second metal layer for a power supply and the second metal layer for grounding, and wherein faces of the second metal layer for a power supply and the second metal layer for grounding, which are opposed to each other, are roughened.
Claim 12
Dependent Claim 35 words
A semiconductor package according to claim 8, wherein the opposed faces of the metal layer for a power supply and the metal layer for grounding are roughened by being formed in a plurality of waves.
Claim 13
Dependent Claim 35 words
A semiconductor package according to claim 8, wherein the opposed faces of the metal layer for a power supply and the metal layer for grounding are roughened by being formed in a plurality of dimples.
Claim 14
Dependent Claim 35 words
A semiconductor package according to claim 8, wherein the opposed faces of the metal layer for a power supply and the metal layer for grounding are roughened by being formed in a plurality of projections.
Claim 15
Dependent Claim 37 words
A semiconductor package according to claim 9, wherein the opposed faces of the second metal layer for a power supply and the second metal layer for grounding are roughened by being formed in a plurality of waves.
Claim 16
Dependent Claim 37 words
A semiconductor package according to claim 9, wherein the opposed faces of the second metal layer for a power supply and the second metal layer for grounding are roughened by being formed in a plurality of dimples.
Claim 17
Dependent Claim 37 words
A semiconductor package according to claim 9, wherein the opposed faces of the second metal layer for a power supply and the second metal layer for grounding are roughened by being formed in a plurality of projections.
Claim 18
Dependent Claim 91 words
A semiconductor package comprising: a die pad; a first capacitor adhered on a first face of the die pad wherein the first capacitor comprises: a metal layer for a power supply; a metal layer for grounding; and a dielectric body formed between the metal layer for a power supply and the metal layer for grounding, and wherein the first capacitor has a spiral shape; and a semiconductor chip die-bonded on the first capacitor, wherein the semiconductor chip and the first capacitor are connected to leads and sealed in the same package.
Claim 19
Dependent Claim 91 words
A semiconductor package comprising: a die pad; a first capacitor adhered on a first face of the die pad wherein the first capacitor comprises: a metal layer for a power supply; a metal layer for grounding; and a dielectric body formed between the metal layer for a power supply and the metal layer for grounding, and wherein the first capacitor has a spiral shape; and a semiconductor chip die-bonded on the first capacitor, wherein the semiconductor chip and the first capacitor are connected to leads and sealed in the same package.
Claim 20
Dependent Claim 33 words
A semiconductor package according to claim 16, wherein the first capacitor is formed by rolling and flattening the metal layer for power source, the metal layer for grounding, and the dielectric body together.
Claim 21
Dependent Claim 25 words
A semiconductor package according to claim 16, wherein the metal layer for grounding of the first capacitor is connected electrically to the die pad grounded.
Claim 22
Dependent Claim 34 words
A semiconductor package according to claim 16, wherein the metal layer for grounding of the first capacitor is connected electrically to a lower surface of the semiconductor chip, and the lower surface is grounded.

References Cited (Backward Citations)

JPS6135544A Cited
JPS6375043A Cited
JPS63132459A Cited
JPH02158147A Cited
JPH0394452A Cited
US5200364A Cited
JPH0479264A Cited
US5095402A Cited
US5234857A Cited
US5428245A Cited
US5600175A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-07-18 2004-01-17 2004-07-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-07-18 2008-01-17 2008-07-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-07-18 2012-01-17 2012-07-18 $7700.00 Window Closed / Lapsed

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