Method and apparatus for depositing deep UV photoresist films

Claim 2

A process for depositing a photo-sensitive resist layer on a substrate disposed in a substrate processing chamber, said process comprising the steps of: (a) establishing a selected process pressure in said chamber; (b) providing thermal energy to heat said substrate to temperature of between about 50° C. and about 200° C.; after steps (a) and (b), flowing a precursor gas of methylsilane into said chamber; and providing electromagnetic energy to said electrode to strike a plasma to plasma-polymerize said precursor gas of methylsilane and to deposit a plasma-polymerized methylsilane (PPMS) layer on said substrate.

Claim 3

The process of claim 1 further comprising establishing a process pressure of between about 1 Torr and about 2 Torr driving the deposition of said PPMS layer.

Claim 4

A process for depositing a photo-sensitive resist layer on a substrate disposed in a substrate processing chamber, said process comprising: (a) establishing a selected process pressure in said chamber of between about 1 Torr and about 2 Torr; flowing a precursor gas of methylsilane into said chamber; and providing electromagnetic energy to said electrode to strike a plasma to plasma-polymerize said precursor gas of methylsilane and to deposit a plasma-polymerized methylsilane (PPMS) layer on said substrate.

Claim 5

A process for depositing a photo-sensitive resist layer on a substrate disposed in a substrate processing chamber, said process comprising: (a) establishing a selected process pressure in said chamber of between about 1 Torr and about 2 Torr; flowing a precursor gas of methylsilane into said chamber; and providing electromagnetic energy to said electrode to strike a plasma to plasma-polymerize said precursor gas of methylsilane and to deposit a plasma-polymerized methylsilane (PPMS) layer on said substrate.

Claim 6

The process of claim 3 wherein said process pressure is between 1 and 2 Torr.

Claim 7

The process of claim 3 further comprising heating said substrate to a temperature of between about 50° C. and about 200° C. during deposition of said PPMS layer.

Claim 8

A process for depositing a photo-sensitive resist layer on a substrate disposed in a substrate processing chamber, said process comprising: (a) establishing a process pressure in the chamber of between about 1 Torr and about 2 Torr; (b) providing thermal energy to heat said substrate to a temperature of between about 50° C. and about 200° C.; (c) flowing a precursor gas of methylsilane into a reaction zone of the chamber; (d) providing electromagnetic energy to an electrode of the chamber to strike a plasma from said methylsilane precursor gas; and (e) after steps (a) through (d), maintaining the chamber at a process pressure of between about 1 Torr and about 2 Torr, maintaining said substrate at a temperature of between about 50° C. and about 200° C., maintaining said flow of methylsilane and maintaining said plasma to deposit a plasma-polymerized methylsilane (PPMS) layer having a selected thickness over said substrate.

Claim 9

A process for depositing a photo-sensitive resist layer on a substrate disposed in a substrate processing chamber, said process comprising: (a) establishing a process pressure in the chamber of between about 1 Torr and about 2 Torr; (b) providing thermal energy to heat said substrate to a temperature of between about 50° C. and about 200° C.; (c) flowing a precursor gas of methylsilane into a reaction zone of the chamber; (d) providing electromagnetic energy to an electrode of the chamber to strike a plasma from said methylsilane precursor gas; and (e) after steps (a) through (d), maintaining the chamber at a process pressure of between about 1 Torr and about 2 Torr, maintaining said substrate at a temperature of between about 50° C. and about 200° C., maintaining said flow of methylsilane and maintaining said plasma to deposit a plasma-polymerized methylsilane (PPMS) layer having a selected thickness over said substrate.