US5635338A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Energy sensitive materials and methods for their use
Assignee: Nokia of America Corp
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Filing: 1994-02-25
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Granted: 1997-06-03
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Expires: 2014-02-25
Abstract
Abstract A class of silicon-containing materials display excellent sensitively in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.
Inventors
- 👤 Ajey M. Joshi
- 👤 Timothy W. Weidman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:22
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/16; G03F7/167; G03F7/0754; G03F7/26; G03F7/36
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
73 words
A process for fabricating an article comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material comprises a silicon polymer represented by the base unit: [R.sub.x SiH.sub.yn ] where 0.2<x<1.5, 0.2<y<1.5 and R is an organic substituent resulting in said material being insoluble and wherein said developed image is positive.
Claim 2
Dependent Claim
73 words
A process for fabricating an article comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material comprises a silicon polymer represented by the base unit: [R.sub.x SiH.sub.yn ] where 0.2<x<1.5, 0.2<y<1.5 and R is an organic substituent resulting in said material being insoluble and wherein said developed image is positive.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein said exposing said material is performed in the presence of oxygen.
Claim 4
Dependent Claim
18 words
The process of claim 1 wherein said therefore developed image is achieved by employing a plasma based etchant.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein said therefore developed image is achieved by employing a wet etchant.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein said radiation comprises ultraviolet or deep ultraviolet radiation.
Claim 7
Dependent Claim
16 words
The process of claim 1 wherein said organic substituent comprises an alkyl or an aryl substituent.
Claim 8
Dependent Claim
14 words
The process of claim 1 wherein said developing is accomplished with an aqueous developer.
Claim 9
Dependent Claim
14 words
The process of claim 1 wherein said pattern after said developing is further oxidized.
Claim 10
Dependent Claim
14 words
The process of claim 8 wherein said pattern is oxidized to SiO 2 .
Claim 11
Dependent Claim
77 words
A process for fabricating a body comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material is formed by discharge in a precursor such that said material comprises a composition represented by the formula [R x SiH y ] where 0.2<x<1.5, 0.2<y<1.5 and R is an organic substituent and wherein said pattern is positive.
Claim 12
Dependent Claim
77 words
A process for fabricating a body comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material is formed by discharge in a precursor such that said material comprises a composition represented by the formula [R x SiH y ] where 0.2<x<1.5, 0.2<y<1.5 and R is an organic substituent and wherein said pattern is positive.
Claim 13
Dependent Claim
15 words
The process of claim 10 wherein said exposure is performed in the presence of oxygen.
Claim 14
Dependent Claim
13 words
The process of claim 10 wherein said development comprises exposure to a plasma.
Claim 15
Dependent Claim
44 words
The process of claim 12 wherein said plasma comprises a fluorine-containing plasma wherein the plasma is generated by striking a discharge in a gas comprising a fluorine-containing reactant selected from the group consisting of CF 4 , CHF 3 , and SF 6 .
Claim 16
Dependent Claim
14 words
The process of claim 10 wherein said radiation comprises ultraviolet or deep ultraviolet light.
Claim 17
Dependent Claim
16 words
The process of claim 10 wherein said organic substituent comprises an alkyl or an aryl substituent.
Claim 18
Dependent Claim
17 words
The process of claim 10 including the step of transferring said pattern to said substrate by etching.
Claim 19
Dependent Claim
17 words
The process of claim 10 wherein said forming a layer is done in the presence of hydrogen.
Claim 20
Dependent Claim
16 words
The process of claim 10 wherein said developing said pattern comprises exposure to a wet etchant.
Claim 21
Dependent Claim
14 words
The process of claim 10 wherein said pattern after said developing is further oxidized.
Claim 22
Dependent Claim
67 words
A process for fabricating a body comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material is formed by discharge in a precursor comprising a composition represented by the formula RSiH 3 wherein R is an organic substituent and wherein said pattern is positive.
Claim 23
Dependent Claim
67 words
A process for fabricating a body comprising the steps of forming a layer of radiation sensitive material on a substrate, exposing said material to said radiation to form a pattern and developing said pattern characterized in that said material is formed by discharge in a precursor comprising a composition represented by the formula RSiH 3 wherein R is an organic substituent and wherein said pattern is positive.
Claim 24
Dependent Claim
15 words
The process of claim 20 wherein said organic substituent comprises an alkyl or aryl substituent.
Claim 25
Dependent Claim
21 words
The process of claim 20 wherein said forming and said developing is performed without subjecting said substrate to the ambient environment.
Claim 26
Dependent Claim
14 words
The process of claim 20 wherein said pattern after said developing is further oxidized.
References Cited (Backward Citations)
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