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US6087674A
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Memory element with memory material comprising phase-change material and dielectric material
Assignee: Ovonyx Memory Technology LLC
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Filing: 1998-04-20
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Granted: 2000-07-11
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Expires: 2018-04-20
Abstract
Abstract An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.
Inventors
- 👤 Standford R. Ovshinsky
- 👤 Wolodymyr Czubatyj
- 👤 David A. Strand
- 👤 Patrick J. Klersy
- 👤 Sergey Kostylev
- 👤 Boil Pashmakov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:05
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004; H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; H10N70/841; H10N70/8418; H10N70/881; H10N70/882; H10N70/8828; G11C2213/00; G11C2213/30; G11C2213/35; G11C2213/50; G11C2213/51; G11C2213/52; G11C2213/70; G11C2213/72
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
75 words
An electrically operated, single-cell memory element comprising: a volume of memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material, said phase-change material programmable to a plurality of detectable resistivity values in response to an electrical signal, said dielectric material being between about 60 and 90 percent of said volume of memory material; and means for delivering said electrical signal to at least a portion of said volume of memory material.
Claim 2
Dependent Claim
75 words
An electrically operated, single-cell memory element comprising: a volume of memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material, said phase-change material programmable to a plurality of detectable resistivity values in response to an electrical signal, said dielectric material being between about 60 and 90 percent of said volume of memory material; and means for delivering said electrical signal to at least a portion of said volume of memory material.
Claim 3
Dependent Claim
49 words
The memory element of claim 1, wherein said phase-change material can be set directly to one of said resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of said material, in response to said electrical signal.
Claim 4
Dependent Claim
38 words
The memory element of claim 1, wherein said phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof.
Claim 5
Dependent Claim
23 words
The memory element of claim 3, wherein said phase-change material includes at least one chalcogen element and at least one transition metal element.
Claim 6
Dependent Claim
23 words
The memory element of claim 4, wherein said chalcogen element is selected from the group of Te, Se and mixtures or alloys thereof.
Claim 7
Dependent Claim
18 words
The memory element of claim 5, wherein said chalcogen element is a mixture of both Te and Se.
Claim 8
Dependent Claim
32 words
The memory element of claim 4, wherein said at least one transition metal element is selected from the group consisting of Cr, Fe, Ni, Nb, Pd, Pt and mixtures or alloys thereof.
Claim 9
Dependent Claim
36 words
The memory element of claim 1, wherein said dielectric material is one or more materials selected from the group consisting of oxides, nitrides, fluorides, sulfides, chlorides, carbides, oxynitrides, carboxynitrides, borides, phosphides and mixtures or alloys thereof.
Claim 10
Dependent Claim
15 words
The memory element of claim 1, wherein said dielectric material is an organic dielectric material.
Claim 11
Dependent Claim
25 words
The memory element of claim 1, wherein said means for delivering is a first contact and a second contact adjoining said volume of memory material.
Claim 12
Dependent Claim
30 words
The memory element of claim 1, wherein said means for delivering comprises at least one tapered contact, said tapered contact tapering to a peak adjoining said volume of memory material.
Claim 13
Dependent Claim
27 words
The memory element of claim 1, wherein said means for delivering comprises at least one field emitter positioned in close proximity to said volume of memory material.
Claim 14
Dependent Claim
28 words
The memory element of claim 1, wherein said means for delivering comprises at least one field emitter positioned within the tunneling distance of said volume of memory material.
Claim 15
Dependent Claim
15 words
The memory element of claim 2, wherein said phase-change material has two detectable resistivity values.
Claim 16
Dependent Claim
17 words
The memory element of claim 2, wherein said phase-change material has at least three detectable resistivity values.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |