US6087278A
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Method for fabricating semiconductor devices having an HDP-CVD oxide layer as a passivation layer
Assignee: SK Hynix Inc
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Filing: 1999-06-08
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Granted: 2000-07-11
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Expires: 2019-06-08
Abstract
Abstract There is provided a method for fabricating a semiconductor device, by which passivation layers are formed with good step coverage to prevent crack or void from being occurred in high aspect ratio of metallization layers and the time for performing the processes can be decreased to enhance the productability and the yield of the device. The method is performed as follows. Over a substrate having completed metallization layers, an oxide layer is formed as a first passivation layer by high-density plasma chemical vapor deposition (HDP-CVD). On the HDP-CVD oxide layer, a nitride layer is formed as a second passivation layer by plasma enhanced chemical vapor deposition (PECVD) or HDP-CVD.
Inventors
- 👤 Sun Oo Kim
- 👤 Han Min Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/098; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
75 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD); and forming a nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 2
Independent Claim
75 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD); and forming a nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein the oxide layer is formed with a thickness of 110˜130% based on the height of the metallization layer.
Claim 4
Dependent Claim
25 words
The method according to claim 1, wherein the oxide layer is formed with a thickness of 70˜190% based on the height of the metallization layer.
Claim 5
Dependent Claim
32 words
The method according to claim 1, wherein the oxide layer is formed with a chamber pressure of 1˜10 mTorr by HDP-CVD to increase bottom coverage in the space between the metallization layers.
Claim 6
Dependent Claim
61 words
The method according to claim 1, wherein the oxide layer is formed by HDP-CVD using SiH 4 , O 2 and Ar as input gases, herein the flow rate of SiH 4 is in the range of 80˜120 sccm, that of O 2 is in the range of 100˜120 sccm, and that of Ar is in the range of 50˜450 sccm.
Claim 7
Dependent Claim
33 words
The method according to claim 1, wherein the PECVD nitride layer has the penetration of more than 70% based on the amount of ultraviolet ray penetration of the same thick silicon oxide layer.
Claim 8
Independent Claim
76 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-DVD); and forming a nitride layer as a second passivation layer on the oxide layer by high density plasma chemical vapor deposition (HDP-CVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 9
Independent Claim
76 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-DVD); and forming a nitride layer as a second passivation layer on the oxide layer by high density plasma chemical vapor deposition (HDP-CVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 10
Dependent Claim
25 words
The method according to claim 7, wherein the oxide layer is formed with a thickness of 110˜130% based on the height of the metallization layer.
Claim 11
Dependent Claim
25 words
The method according to claim 7, wherein the oxide layer is formed with a thickness of 70˜90% based on the height of the metallization layer.
Claim 12
Dependent Claim
61 words
The method according to claim 7, wherein the oxide layer is formed by HDP-CVD using SiH 4 , O 2 and Ar as input gases, wherein the flow rate of SiH 4 is in the range of 80˜120 sccm, that of O 2 is in the range of 100˜120 sccm, and that of Ar is in the range of 50˜450 sccm.
Claim 13
Dependent Claim
29 words
The method according to claim 7, wherein the nitride layer is formed by HDP-CVD using SiH 4 , N 2 and/or NH 3 , and Ar as input gases.
Claim 14
Independent Claim
75 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD); and forming an oxy-nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 15
Independent Claim
75 words
A method for fabricating a semiconductor device which comprises the steps of: preparing a substrate with completion of metallization; forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD); and forming an oxy-nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Claim 16
Dependent Claim
25 words
The method according to claim 12, wherein the oxide layer is formed with a thickness of 110˜130% based on the height of the metallization layer.
Claim 17
Dependent Claim
25 words
The method according to claim 12, wherein the oxide layer is formed with a thickness of 70˜90% based on the height of the metallization layer.
Claim 18
Dependent Claim
61 words
The method according to claim 12, wherein the oxide layer is formed by HDP-CVD using SiH 4 , O 2 and Ar as input gases, wherein the flow rate of SiH 4 is in the range of 80˜120 sccm, that of O 2 is in the range of 100˜120 sccm, and that of Ar is in the range of 50˜450 sccm.
Claim 19
Dependent Claim
30 words
The method according to claim 12, the oxy-nitride layer is formed by HDP-CVD using SiH 4 , N 2 and/or NH 3 , Ar and O 2 as input gases.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
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