Self-aligned sloped contact

Claim 2

A contact, comprising: a BPSG layer; a TEOS layer, underlying said BPSG layer, at least 300 nm thick; a concavely sidewalled contact top opening in said BPSG layer, formed by isotropic etch; a convexly sidewalled contact bottom opening in said TEOS layer, formed by anisotropic etch; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; a layer overlying said BPSG layer, selected from the electrically conductive group of metal, silicon, and metal silicides; and a layer underlying said TEOS layer, selected from the group of metal, silicon, and metal silicides; said overlying layer contacting said underlying layer through said contact hole.

Claim 3

A contact, comprising: a BPSG layer; a TEOS layer, having a minimum thickness of 200 nm, underlying said BPSG layer; a concavely sidewalled contact top opening in said BPSG layer; a convexly sidewalled contact bottom opening in said TEOS layer; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; a layer overlying said BPSG layer; and a layer underlying said TEOS layer; said overlying layer contacting said underlying layer through said contact hole.

Claim 4

A contact, comprising: a BPSG layer; a TEOS layer, having a minimum thickness of 200 nm, underlying said BPSG layer; a concavely sidewalled contact top opening in said BPSG layer; a convexly sidewalled contact bottom opening in said TEOS layer; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; a layer overlying said BPSG layer; and a layer underlying said TEOS layer; said overlying layer contacting said underlying layer through said contact hole.

Claim 5

The contact of claim 2, wherein said overlying and underlying layers are electrically conductive.

Claim 6

The contact of claim 3, wherein said overlying and underlying layers have compositions selected from the group of metal, silicon, and metal silicides.

Claim 7

The contact of claim 2, wherein said concavely sidewalled contact top opening is formed by isotropic etch.

Claim 8

The contact of claim 2, wherein said convexly sidewalled contact bottom opening is formed by anisotropic etch.

Claim 9

The contact of claim 2, wherein said TEOS layer is at least 300 nm thick.

Claim 10

The contact of claim 2, wherein said TEOS layer is at least 500 nm thick.

Claim 11

A self-aligned contact, comprising: a substrate; a structure on said substrate; a TEOS layer, having a minimum thickness of 200 nm, overlying said substrate and said structure, conformal to a profile defined by said substrate and said structure; a BPSG layer, overlying said TEOS layer; a concavely sidewalled contact top opening in said BPSG layer; a convexly sidewalled contact bottom opening in said TEOS layer; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; and a layer overlying said BPSG layer and contacting said substrate through said contact hole.

Claim 12

A self-aligned contact, comprising: a substrate; a structure on said substrate; a TEOS layer, having a minimum thickness of 200 nm, overlying said substrate and said structure, conformal to a profile defined by said substrate and said structure; a BPSG layer, overlying said TEOS layer; a concavely sidewalled contact top opening in said BPSG layer; a convexly sidewalled contact bottom opening in said TEOS layer; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; and a layer overlying said BPSG layer and contacting said substrate through said contact hole.

Claim 13

The self-aligned contact of claim 9, wherein said TEOS layer is at least 300 nm thick.

Claim 14

The self-aligned contact of claim 9, wherein said TEOS layer is at least 500 nm thick.

Claim 15

The self-aligned contact of claim 9, wherein said substrate and said overlying layer are electrically conductive.

Claim 16

The self-aligned contact of claim 9, wherein said substrate is selected from the group of metal, silicon, and metal silicides.

Claim 17

The self-aligned contact of claim 9, wherein said overlying layer is selected from the group of metal, silicon, and metal silicides.

Claim 18

The self-aligned contact of claim 9, wherein said structure is selected from the group of metal, silicon, and metal silicides.

Claim 21

A contact, formed by: providing a substrate; providing a TEOS layer at least 200 nm thick and a BPSG layer over said substrate, such that said BPSG layer overlies said TEOS layer; masking said BPSG layer, leaving an exposed region of said BPSG layer where the contact is desired; isotropically etching said exposed BPSG region, until a portion of said TEOS layer is exposed and said BPSG layer is undercut, to provide a concavely sidewalled contact top opening in said BPSG layer; anisotropically etching said exposed TEOS portion, until a portion of said substrate is exposed, to provide a convexly sidewalled contact bottom opening in said TEOS layer, contiguous with said contact top opening, said top opening and said bottom opening together forming a contact hole through said BPSG and TEOS layers; demasking said BPSG layer; and providing a top layer over and in said contact hole, thus forming a contact from said top layer to said substrate.

Claim 22

A contact, formed by: providing a substrate; providing a TEOS layer at least 200 nm thick and a BPSG layer over said substrate, such that said BPSG layer overlies said TEOS layer; masking said BPSG layer, leaving an exposed region of said BPSG layer where the contact is desired; isotropically etching said exposed BPSG region, until a portion of said TEOS layer is exposed and said BPSG layer is undercut, to provide a concavely sidewalled contact top opening in said BPSG layer; anisotropically etching said exposed TEOS portion, until a portion of said substrate is exposed, to provide a convexly sidewalled contact bottom opening in said TEOS layer, contiguous with said contact top opening, said top opening and said bottom opening together forming a contact hole through said BPSG and TEOS layers; demasking said BPSG layer; and providing a top layer over and in said contact hole, thus forming a contact from said top layer to said substrate.

Claim 23

A self-aligned contact, formed by: providing a substrate; providing a structure on said substrate; providing a TEOS layer at least 200 nm thick, overlying said substrate and said structure, conformal to a profile defined by said substrate and said structure; providing a BPSG layer, overlying and conformal to said TEOS layer; masking said BPSG layer, leaving an exposed region of said BPSG layer where the contact is desired, next to said structure; isotropically etching said exposed BPSG region until a portion of said TEOS layer is exposed and said BPSG layer is undercut, to provide a concavely sidewalled contact top opening in said BPSG layer; anisotropically etching said exposed TEOS portion until a portion of said substrate is exposed, to provide a convexly sidewalled contact bottom opening in said TEOS layer, contiguous with said contact top opening, said top opening and said bottom opening together forming a contact hole through said BPSG and TEOS layers; said contact bottom opening being directed away from said structure during said anistropic etch by said TEOS layer; demasking said BPSG layer; and providing a conductive top layer over and in said contact hole, thus forming a contact from said top layer to said substrate.

Claim 24

A self-aligned contact, formed by: providing a substrate; providing a structure on said substrate; providing a TEOS layer at least 200 nm thick, overlying said substrate and said structure, conformal to a profile defined by said substrate and said structure; providing a BPSG layer, overlying and conformal to said TEOS layer; masking said BPSG layer, leaving an exposed region of said BPSG layer where the contact is desired, next to said structure; isotropically etching said exposed BPSG region until a portion of said TEOS layer is exposed and said BPSG layer is undercut, to provide a concavely sidewalled contact top opening in said BPSG layer; anisotropically etching said exposed TEOS portion until a portion of said substrate is exposed, to provide a convexly sidewalled contact bottom opening in said TEOS layer, contiguous with said contact top opening, said top opening and said bottom opening together forming a contact hole through said BPSG and TEOS layers; said contact bottom opening being directed away from said structure during said anistropic etch by said TEOS layer; demasking said BPSG layer; and providing a conductive top layer over and in said contact hole, thus forming a contact from said top layer to said substrate.

Claim 25

An integrated circuit, having a contact, comprising: a BPSG layer; a TEOS layer, underlying said BPSG layer, at least 300 nm thick; a concavely sidewalled contact top opening in said BPSG layer, formed by isotropic etch; a convexly sidewalled contact bottom opening in said TEOS layer, formed by anisotropic etch; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; a layer overlying said BPSG layer, selected from the electrically conductive group of metal, silicon, and metal silicides; and a layer underlying said TEOS layer, selected from the group of metal, silicon, and metal silicides; said overlying layer contacting said underlying layer through said contact hole.

Claim 26

An integrated circuit, having a contact, comprising: a BPSG layer; a TEOS layer, underlying said BPSG layer, at least 300 nm thick; a concavely sidewalled contact top opening in said BPSG layer, formed by isotropic etch; a convexly sidewalled contact bottom opening in said TEOS layer, formed by anisotropic etch; said contact top and bottom openings being contiguous, so forming a contact hole through said BPSG and TEOS layers; a layer overlying said BPSG layer, selected from the electrically conductive group of metal, silicon, and metal silicides; and a layer underlying said TEOS layer, selected from the group of metal, silicon, and metal silicides; said overlying layer contacting said underlying layer through said contact hole.