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US6087197A
Expired / Lapsed
US
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Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
Assignee: Panasonic Holdings Corp
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Filing: 1999-01-08
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Granted: 2000-07-11
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Expires: 2019-01-08
Abstract
Abstract On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).
Inventors
- 👤 Koji Eriguchi
- 👤 Masafumi Kubota
- 👤 Masaaki Niwa
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:41
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; B; B82; B82Y; B82Y10/00; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/124; G02B6/1245; G11; G11C; G11C23/00; H01; H01H; H01H1/00; H01H1/0036; H10F77/00; H10F77/10; H10F77/14; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; G02B2006/12083; G02B2006/12102; G02B2006/12166; G02B2006/12173; G02B2006/12176; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/814; H10H20/817; H10H20/818; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947; Y10S438/962; Y10S438/964
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
223 words
A method of manufacturing an aggregate of semiconductor micro-needles, comprising the steps of: forming on a silicon substrate a dotted mask having granular materials for covering a large number of dot regions each having a diameter sufficiently small to cause the quantum size effects of said semiconductor; etching said silicon substrate by using said dotted mask so as to form a large number of semiconductor micro-needles each extending from the surface of said silicon substrate to a specified depth; and annealing said granular materials at least once so as to reduce the interface after the formulation of said dotted mask and before etching said silicon substrate, wherein, in the step of forming said dotted mask, an insulating film is formed on said silicon substrate and a pre-dotted mask for covering a large number of minute dot regions is further formed on said insulating film so that said insulating film is patterned using the pre-dotted mask, the remaining portions of the insulating film constituting said dotted mask, and wherein, in the step of forming said pre-dotted mask, a photoresist film is formed on said insulating film and then a part of said photoresist film is mechanically removed by means of a probe needle of an atomic force microscope so that dot regions remain, the remaining portions of the photoresist film constituting said pre-dotted mask.
Claim 2
Independent Claim
223 words
A method of manufacturing an aggregate of semiconductor micro-needles, comprising the steps of: forming on a silicon substrate a dotted mask having granular materials for covering a large number of dot regions each having a diameter sufficiently small to cause the quantum size effects of said semiconductor; etching said silicon substrate by using said dotted mask so as to form a large number of semiconductor micro-needles each extending from the surface of said silicon substrate to a specified depth; and annealing said granular materials at least once so as to reduce the interface after the formulation of said dotted mask and before etching said silicon substrate, wherein, in the step of forming said dotted mask, an insulating film is formed on said silicon substrate and a pre-dotted mask for covering a large number of minute dot regions is further formed on said insulating film so that said insulating film is patterned using the pre-dotted mask, the remaining portions of the insulating film constituting said dotted mask, and wherein, in the step of forming said pre-dotted mask, a photoresist film is formed on said insulating film and then a part of said photoresist film is mechanically removed by means of a probe needle of an atomic force microscope so that dot regions remain, the remaining portions of the photoresist film constituting said pre-dotted mask.
Claim 3
Independent Claim
124 words
A method of manufacturing an aggregate of semiconductor micro-needles, comprising the steps of: forming on a silicon substrate a dotted mask having granular materials made of tin or rhodium for covering a large number of dot regions each having a diameter sufficiently small to cause the quantum size effects of said semiconductor deposited on said silicon substrate so that the granular materials constitute a dotted mask; etching said silicon substrate by using said dotted mask as to form a large number of semiconductor micro-needles each extending from the surface of said silicon substrate to a specified depth; and annealing said granular materials at least once so as to reduce the interface after the formation of said dotted mask and before etching said silicon substrate.
Claim 4
Independent Claim
124 words
A method of manufacturing an aggregate of semiconductor micro-needles, comprising the steps of: forming on a silicon substrate a dotted mask having granular materials made of tin or rhodium for covering a large number of dot regions each having a diameter sufficiently small to cause the quantum size effects of said semiconductor deposited on said silicon substrate so that the granular materials constitute a dotted mask; etching said silicon substrate by using said dotted mask as to form a large number of semiconductor micro-needles each extending from the surface of said silicon substrate to a specified depth; and annealing said granular materials at least once so as to reduce the interface after the formation of said dotted mask and before etching said silicon substrate.
Claim 5
Dependent Claim
48 words
The method of manufacturing an aggregate of semiconductor micro-needles according to claim 2, further comprising the step of forming an insulating film to intervene between said dotted mask and said silicon substrate so that said dotted mask is formed on said silicon substrate via said formed insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |