EP0544408A2
Expired / Lapsed
EP
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Quantum confinement semiconductor light emitting devices
Assignee: Xerox Corp
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Filing: 1992-10-26
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Granted: —
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Expires: 2012-10-26
Abstract
Abstract An electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum wires or quantum dots may be formed, for example in an array, by masking, reactive ion etching and oxidation. Columns (20) may be formed by etching techniques and consist, for example, of p-type silicon material (14) which forms a p-n junction with an n-type silicon end portion (16). The space between the columns is filled with oxide (22) formed by oxidising the silicon columns during a column narrowing process. When the semiconductor core is sufficiently thin, quantum mechanical confinement effects raise the energy and the radiative recombination efficiency of injected carriers. Tuning the core diameters allows selection of individual or multiple wavelength emission bands.
Inventors
- 👤 Nicholas K. Sheridon
- 👤 David K. Biegelsen
- 👤 Noble M. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 12:47
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; B; B82; B82Y; B82Y10/00; H10H20/811; H10H20/812; H10H20/813; Y; Y10; Y10S; Y10S438/00; Y10S438/962
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
80 words
An electroluminescent structure, comprising: a first region (14) of predominantly indirect gap semiconducting material of the type which acts as a receptor for carriers of a first conductivity type; a second region (16) of material of the type which acts as a donor of carriers of the first conductivity type disposed in touching relationship with said material of said first region; and at least said first region configured (20) so as to provide therein quantum carrier confinement in multiple dimensions.
Claim 2
Dependent Claim
20 words
The electroluminescent structure of claim 1, wherein said material of said second region is at least in substantial part metal.
Claim 3
Dependent Claim
18 words
The electroluminescent structure of claim 1, wherein said first region is at least in substantial part porous silicon.
Claim 4
Dependent Claim
76 words
The electroluminescent structure of any one of claims 1 to 3 including a substrate; the first region being predominantly populated with carriers having the first conductivity type and being disposed in touching relationship with said substrate; and the second region being predominantly populated with carriers of a second conductivity type, opposite to that of said first conductivity type, and being disposed such that carriers from said first and second regions may combine to thereby emit light.
Claim 5
Dependent Claim
52 words
The electroluminescent structure of claim 4, further including a third region of intrinsic semiconducting material having an indirect gap, disposed in touching relationship with said first and second regions such that carriers from said first and second regions may travel into and through said third region and combine to thereby emit light.
Claim 6
Dependent Claim
36 words
The electroluminescent structure of claim 4 or claim 5, wherein each of said first and second regions have primary longitudinal axes, and further wherein said first and second regions are disposed in a coaxial, touching relationship.
Claim 7
Dependent Claim
36 words
The electroluminescent structure of any on of claims 4 to 6, wherein said first region is populated predominantly with p-type carriers, and further wherein said first region is disposed between said substrate and said second region.
Claim 8
Dependent Claim
22 words
An electroluminescent device comprising an array of electroluminescent structures in accordance with ay one of claims 1 to 7, on a substrate.
Claim 9
Dependent Claim
210 words
The device of claim 8, wherein said first and second regions have at least one common dimension which in part determines the wavelength of the light emitted by carriers recombining therein, further comprising: a plurality of third regions of indirect gap semiconducting material, configured so as to provide therein quantum carrier confinement in multiple dimensions, predominantly populated with carriers having one conductivity type, disposed in touching relationship with said substrate; a plurality of fourth regions of indirect gap semiconducting material, configured so as to provide therein quantum carrier confinement in multiple dimensions, predominantly populated with carriers of the conductivity type opposite to that of said one conductivity type, disposed such that each said third region has associated therewith a fourth region and further such that carriers from associated third and fourth regions may combine to thereby emit light; and said third and fourth regions having at least one common dimension which in part determines the wavelength of the light emitted by carriers recombining therein which is different from the common dimension of said first and second regions such that the wavelength of light emitted by carriers recombining in said first and second regions is different from the wavelength of light emitted by carriers recombining in said third and fourth regions.
Claim 10
Independent Claim
112 words
A method of fabricating an electroluminescent structure comprising the steps of: on a substrate of indirect gap semiconducting material forming a first region thereon of indirect gap semiconducting material, configured so as to provide therein quantum carrier confinement in multiple dimensions, predominantly populated with carriers having a first conductivity type, disposed in touching relationship with said substrate; and forming a second region of indirect gap semiconducting material, configured so as to provide therein quantum carrier confinement in multiple dimensions, predominantly populated with carriers of a second conductivity type, opposite to that of said first conductivity type, disposed such that carriers from said first and second regions may combine to thereby emit light.
References Cited (Backward Citations)
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